A cross-section processing and observation method performed by a cross-section processing and observation apparatus comprises a cross-section processing step of forming a cross-section by irradiating a sample with an ion beam; a cross-section observation step of obtaining an observation image of the cross-section by irradiating the cross-section with an electron beam; and repeating the cross-section processing step and the cross-section observation step so as to obtain observation images of a plurality of cross-sections. In a case where Energy Dispersive X-ray Spectrometry (EDS) measurement of the cross-section is performed and an X-ray of a specified material or of a non-specified material that is different from a pre-specified material is detected, an irradiation condition of the ion beam is changed so as to obtain observation images of a plurality of cross-sections of the specified material, and the cross-section processing and observation of the specified material is performed.

Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.

The application discloses an X-ray fluorescence system comprising an X-ray source to emit X-ray radiation incident on the sample and a controller to vary an energy of the X-ray radiation incident on the sample between at least a first incident radiation energy and a second incident radiation energy. The system further comprises an X-ray fluorescence detector to detect X-ray radiation fluoresced by the sample in response to the incident X-ray radiation and determine at least: a first fluorescence radiation intensity of X-ray radiation fluoresced by the sample in response to the X-ray radiation incident on the sample at the first incident energy and a second fluorescence radiation intensity of X-ray fluorescence radiation fluoresced by the sample in response to the X-ray radiation incident on the sample at the second incident energy. A method of X-ray fluorescence is also disclosed.

A system, computer readable medium and a method for material analysis, the method may include (i) receiving or generating (a) an estimated composition of a microscopic element; wherein the estimated composition is responsive to an energy spectrum of, at least, the microscopic element; wherein the energy spectrum is obtained by an energy dispersive X-ray (EDX) detector; additional information related to, at least, the microscopic element, wherein the additional information is not obtained by the energy dispersive X-ray detector; and (ii) resolving an ambiguity in the estimated composition in response to the additional information, wherein the ambiguity occurs when the energy spectrum comprises a predefined energy peak that is attributed to a predefined material of ambiguous EDX composition determination.

An apparatus comprises: a focused ion beam (FIB) column within a vacuum chamber configured to direct ions comprising a mixture of protons and non-hydrogen ions onto a sample, wherein the kinetic energy of ions of the mixture is not greater than 50 kilo-electron-Volts (keV); and an X-ray detector configured to detect and measure X-rays that are emitted from the sample in response to the impingement of the protons and non-hydrogen ions onto the sample. The apparatus may further comprise an electron microscope column within the vacuum chamber configured to direct and focus a beam of electrons onto the sample and to detect secondary electrons or backscattered electrons that are emitted from the sample in response to the impingement of the beam of electrons onto the sample. The electron microscope may generate an image of a sample area that is milled by the FIB column.

The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.

The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.

Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.

Methods and systems are disclosed wherein neutrons are produced by a photon induced process 2D(,n) and the ensuing neutrons are thermalized and captured by hydrogen producing a 2.223 MeV gamma that is used to identify and quantify the presence of hydrogen and which, when combined with NRF signals from certain isotopes, can be used to establish the nature of a hydrogenous compound or a mixture of hydrogenous materials or a mixture of hydrogenous materials with other non-hydrogenous materials. The method is useful to establish, e.g., the presence and quantification of explosives, toxic substances and general contraband as well as the flow of materials in a production line or shipping venue.

Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).