A system for identifying microbial agents such as virus particles in a sample. The system includes at least one processing unit for identifying in an electron micrograph obtained from the sample a darker region and identifying virus particles within the darker region. The system can optionally include an electron microscope, a sample collector and sample treatment chamber.

An exterior material for a power storage device, the exterior material being constituted by a laminate including at least a substrate layer, a barrier layer, an adhesive layer, and a thermally adhesive resin layer, in this order, wherein a corrosion-resistant film is provided at least on the surface on the adhesive layer-side of the barrier layer, and when a cross-sectional observation image is acquired using a scanning electron microscope, for the cross section in the thickness direction of the corrosion-resistant film, the corrosion-resistant film is observed in a belt shape in the cross-sectional observation image.

The present invention relates to a method of detecting an edge (or a contour line) of a pattern, which is formed on a workpiece (e.g., a wafer or a mask) for use in manufacturing of semiconductor, from an image generated by a scanning electron microscope. The pattern-edge detection method includes: generating an objective image of a target pattern formed on a workpiece; generating a feature vector representing features of each pixel constituting the objective image; inputting the feature vector to a model constructed by machine learning; outputting, from the model, a determination result indicating whether the pixel having the feature vector is an edge pixel or a non-edge pixel; and connecting a plurality of pixels, each having a feature vector that has obtained a determination result indicating an edge pixel, with a line to generate a virtual edge.

A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending nward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a compensation electrode, which is located between the pole piece and the surface of the sample and is configured to adjust a focusing position of the electron beam at which the electron beam is focused, in a condition of excitation thereof with a voltage being applied thereon, by adjusting the voltage.

A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending nward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a compensation electrode, which is located between the pole piece and the surface of the sample and is configured to adjust a focusing position of the electron beam at which the electron beam is focused, in a condition of excitation thereof with a voltage being applied thereon, by adjusting the voltage.

A method and device for characterizing microbial carbonate pores, and a server. Acquiring a user's detailed observational description of a profile of a microbial carbonate to be analyzed, and determining a full-diameter core sample on the microbial carbonate; performing pore characterization and a first pore test on the full-diameter core sample to determine a centimeter-scale pore parameter; determining a sampling position on the full-diameter core sample, and sampling on the full-diameter core sample to obtain a plunger sample; performing a second pore test on the plunger sample to determine a millimeter-scale pore parameter; determining a sampling position on the plunger sample according to the millimeter-scale pore parameter, and sampling on the plunger sample to obtain a scanning electron microscope (SEM) sample and a casting thin section sample; and performing a pore test on the SEM sample and the casting thin section sample to determine a micron-to-nanoscale pore parameter.

A method and device for characterizing microbial carbonate pores, and a server. Acquiring a user's detailed observational description of a profile of a microbial carbonate to be analyzed, and determining a full-diameter core sample on the microbial carbonate; performing pore characterization and a first pore test on the full-diameter core sample to determine a centimeter-scale pore parameter; determining a sampling position on the full-diameter core sample, and sampling on the full-diameter core sample to obtain a plunger sample; performing a second pore test on the plunger sample to determine a millimeter-scale pore parameter; determining a sampling position on the plunger sample according to the millimeter-scale pore parameter, and sampling on the plunger sample to obtain a scanning electron microscope (SEM) sample and a casting thin section sample; and performing a pore test on the SEM sample and the casting thin section sample to determine a micron-to-nanoscale pore parameter.

Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.

Systems and methods are provided for charged particle detection. The detection system can comprise a signal processing circuit configured to generate a set of intensity gradients based on electron intensity data received from a plurality of electron sensing elements. The detection system can further comprise a beam spot processing module configured to determine, based on the set of intensity gradients, at least one boundary of a beam spot; and determine, based on the at least one boundary, that a first set of electron sensing elements of the plurality of electron sensing elements is within the beam spot. The beam spot processing module can further be configured to determine an intensity value of the beam spot based on the electron intensity data received from the first set of electron sensing elements and also generate an image of a wafer based on the intensity value.

There is provided an analyzer apparatus capable of generating crisp scanned images. In the analyzer apparatus, a sample is scanned with a probe such that a first signal and a second signal are emitted from the sample. The analyzer apparatus comprises: a first detector for detecting the first signal and producing a first detector signal; a second detector for detecting the second signal and producing a second detector signal; and an image processing unit operating (i) to produce a first scanned image and a second scanned image from the first detector signal and the second detector signal, respectively, (ii) to create a filter based on the second scanned image having a higher signal-to-noise ratio than that of the first scanned image, and (iii) to apply the filter to the first scanned image.