Patent classifications
G01N23/2251
OBSERVATION DEVICE FOR OBSERVATION TARGET GAS, METHOD OF OBSERVING TARGET IONS, AND SAMPLE HOLDER
The observation device comprises: a scanning electron microscope for detecting secondary electrons generated by irradiating the sample with an electron beam within the analysis chamber; a sample holder having a cell for housing the observation target gas, an open window of the cell, and a sample mounting part to which the sample can be mounted so as to block the open window; and an observation target ion detecting unit for irradiating the front surface of the sample with an electron beam in a state where the observation target gas in the cell contacts the back surface of the sample and detecting observation target ions derived from the observation target gas generated by the electron beam. In a state where the observation target gas is housed in the cell and the sample is mounted to the sample mounting part of the sample holder, the entire hydrogen cell can be sealed.
OBSERVATION DEVICE FOR OBSERVATION TARGET GAS, METHOD OF OBSERVING TARGET IONS, AND SAMPLE HOLDER
The observation device comprises: a scanning electron microscope for detecting secondary electrons generated by irradiating the sample with an electron beam within the analysis chamber; a sample holder having a cell for housing the observation target gas, an open window of the cell, and a sample mounting part to which the sample can be mounted so as to block the open window; and an observation target ion detecting unit for irradiating the front surface of the sample with an electron beam in a state where the observation target gas in the cell contacts the back surface of the sample and detecting observation target ions derived from the observation target gas generated by the electron beam. In a state where the observation target gas is housed in the cell and the sample is mounted to the sample mounting part of the sample holder, the entire hydrogen cell can be sealed.
IMAGE PROCESSING METHOD, PATTERN INSPECTION METHOD, IMAGE PROCESSING SYSTEM, AND PATTERN INSPECTION SYSTEM
An image processing method whereby data pertaining to an estimated captured image obtained from reference data of a sample is acquired using an input acceptance unit, an estimation unit, and an output unit. The data is used when comparing the estimated image and an actual image of the sample, wherein the method includes: an input acceptance unit accepting input of the reference data, process information pertaining to the sample, and trained model data; the estimation unit using the reference data, the process information, and the model data to calculate captured image statistics representing a probabilistic distribution of values attained by the data of the captured image; and the output unit outputting the captured image statistics, and generating the estimated captured image from the captured image statistics. This permits reducing the time required for estimation and to perform comparison in real time.
Segmented multi-channel, backside illuminated, solid state detector with a through-hole for detecting secondary and backscattered electrons
A segmented detector device with backside illumination. The detector is able to collect and differentiate between secondary electrons and backscatter electrons. The detector includes a through-hole for passage of a primary electron beam. After hitting a sample, the reflected secondary and backscatter electrons are collected via a vertical structure having a P+/P−/N+ or an N+/N−/P+ composition for full depletion through the thickness of the device. The active area of the device is segmented using field isolation insulators located on the front side of the device.
Segmented multi-channel, backside illuminated, solid state detector with a through-hole for detecting secondary and backscattered electrons
A segmented detector device with backside illumination. The detector is able to collect and differentiate between secondary electrons and backscatter electrons. The detector includes a through-hole for passage of a primary electron beam. After hitting a sample, the reflected secondary and backscatter electrons are collected via a vertical structure having a P+/P−/N+ or an N+/N−/P+ composition for full depletion through the thickness of the device. The active area of the device is segmented using field isolation insulators located on the front side of the device.
Charged particle beam apparatus
A charged particle beam apparatus using a light guide that improves light utilization efficiency includes a detector including a scintillator for emitting light when a charged particle is incident, a light receiving element, and a light guide for guiding the light from the scintillator to the light receiving element. The light guide includes: an incident surface that faces a light emitting surface of the scintillator and to which the light emitted by the scintillator is incident; an emitting surface that is configured to emit light; and a reflecting surface that is inclined with respect to the incident surface so that the light from the incident surface is reflected toward the emitting surface. The emitting surface is smaller than the incident surface. A slope surface is provided between the incident surface and the emitting surface, faces the reflecting surface, and is inclined with respect to the incident surface.
Charged particle beam apparatus
A charged particle beam apparatus using a light guide that improves light utilization efficiency includes a detector including a scintillator for emitting light when a charged particle is incident, a light receiving element, and a light guide for guiding the light from the scintillator to the light receiving element. The light guide includes: an incident surface that faces a light emitting surface of the scintillator and to which the light emitted by the scintillator is incident; an emitting surface that is configured to emit light; and a reflecting surface that is inclined with respect to the incident surface so that the light from the incident surface is reflected toward the emitting surface. The emitting surface is smaller than the incident surface. A slope surface is provided between the incident surface and the emitting surface, faces the reflecting surface, and is inclined with respect to the incident surface.
Scanning electron microscopy system and pattern depth measurement method
A scanning electron microscopy system that includes a primary electron beam radiation unit configured to irradiate a first pattern of a substrate having a second pattern formed in a peripheral region of the first pattern, a detection unit configured to detect back scattered electrons emitted from the substrate, an image generation unit configured to generate an electron beam image corresponding to a strength of the back scattered electrons, a designating unit configured to designate a depth measurement region in which the first pattern exists on the electron beam image, and a processing unit configured to obtain an image signal of the depth measurement region and a pattern density in the peripheral region where the second pattern exists, and to estimate a depth of the first pattern based on the obtained image signal of the depth measurement region and the pattern density in the peripheral region.
Electron Source, Electron Beam Device, and Method for Manufacturing Electron Source
In a Schottky emitter or a thermal field emitter using a hexaboride single crystal, side emission from portions other than an electron emission portion is reduced. An electron source according to the invention includes: a protrusion (40) configured to emit an electron when an electric field is generated; a shank (41) that supports the protrusion (40) and has a diameter decreasing toward the protrusion (40); and a body (42) that supports the shank (41), in which the protrusion (40), the shank (41), and the body (42) are each made of a hexaboride single crystal, and a part including the shank (41) and the body (42) excluding the protrusion (40) is covered with a material having a work function higher than that of the hexaboride single crystal.
Electron Source, Electron Beam Device, and Method for Manufacturing Electron Source
In a Schottky emitter or a thermal field emitter using a hexaboride single crystal, side emission from portions other than an electron emission portion is reduced. An electron source according to the invention includes: a protrusion (40) configured to emit an electron when an electric field is generated; a shank (41) that supports the protrusion (40) and has a diameter decreasing toward the protrusion (40); and a body (42) that supports the shank (41), in which the protrusion (40), the shank (41), and the body (42) are each made of a hexaboride single crystal, and a part including the shank (41) and the body (42) excluding the protrusion (40) is covered with a material having a work function higher than that of the hexaboride single crystal.