The present invention is a method for forming a thermal oxide film on a semiconductor substrate, including: a correlation acquisition step of providing a plurality of semiconductor substrates each having a chemical oxide film having a different constitution formed by cleaning, performing a thermal oxidization treatment under identical thermal oxidization treatment conditions to form a thermal oxide film, and determining a correlation between the constitution of the chemical oxide film and a thickness of the thermal oxide film in advance; a cleaning condition determination step of determining the constitution of the chemical oxide film based on the correlation obtained in the correlation acquisition step so that a thickness of a thermal oxide film to be formed on a semiconductor substrate is a predetermined thickness, and determining cleaning conditions for forming a chemical oxide film having the determined constitution of the chemical oxide film; a substrate cleaning step of cleaning the semiconductor substrate under the determined cleaning conditions; and a thermal oxide film formation step of performing a thermal oxidization treatment on the cleaned semiconductor substrate under conditions identical to the thermal oxidization treatment conditions in the correlation acquisition step to form a thermal oxide film on a surface of the semiconductor substrate. Consequently, a thermal oxide film is formed with the target film thickness with excellent reproducibility.

Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.

Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.

There is provided a light guide plate for image display includes: a first laminate (11) configured to be provided with a first resin base (1), a first anchor coat layer (2), and a first barrier layer (3) in this order; and a hologram layer (4), wherein the first barrier layer (3) is made of silicon oxynitride as a main component and a nitrogen element formulation, which is determined by X-ray photoelectron spectroscopy (XPS), in the first barrier layer (3) is greater than 0 atm % and 25 atm % or less.

There is provided a light guide plate for image display includes: a first laminate (11) configured to be provided with a first resin base (1), a first anchor coat layer (2), and a first barrier layer (3) in this order; and a hologram layer (4), wherein the first barrier layer (3) is made of silicon oxynitride as a main component and a nitrogen element formulation, which is determined by X-ray photoelectron spectroscopy (XPS), in the first barrier layer (3) is greater than 0 atm % and 25 atm % or less.

The present application relates to a method for detecting the stability of an X-ray photoelectron spectrometer, comprising: obtaining a first upper limit value and a first lower limit value of a rate of oxygen and nitrogen contents of a calibrating wafer having a silicon oxynitride film formed on its surface; measuring the calibrating wafer by the X-ray photoelectron spectrometer to obtain a first test value of the rate of oxygen and nitrogen contents; and when the first test value is between the first upper limit value and the first lower limit value, considering that the photoelectron spectrometer can accurately test the nitrogen content of the monitor wafer since the value of the nitrogen content of the monitor wafer obtained by the X-ray photoelectron spectrometer is within the normal fluctuation range, and determining that the X-ray photoelectron spectrometer is stable.

The present application relates to a method for detecting the stability of an X-ray photoelectron spectrometer, comprising: obtaining a first upper limit value and a first lower limit value of a rate of oxygen and nitrogen contents of a calibrating wafer having a silicon oxynitride film formed on its surface; measuring the calibrating wafer by the X-ray photoelectron spectrometer to obtain a first test value of the rate of oxygen and nitrogen contents; and when the first test value is between the first upper limit value and the first lower limit value, considering that the photoelectron spectrometer can accurately test the nitrogen content of the monitor wafer since the value of the nitrogen content of the monitor wafer obtained by the X-ray photoelectron spectrometer is within the normal fluctuation range, and determining that the X-ray photoelectron spectrometer is stable.

Provided is a positive electrode active material for a lithium ion secondary battery having favorable cycle characteristics and high capacity. A covering layer containing aluminum and a covering layer containing magnesium are provided on a superficial portion of the positive electrode active material. The covering layer containing magnesium exists in a region closer to a particle surface than the covering layer containing aluminum is. The covering layer containing aluminum can be formed by a sol-gel method using an aluminum alkoxide. The covering layer containing magnesium can be formed as follows: magnesium and fluorine are mixed as a starting material and then subjected to heating after the sol-gel step, so that magnesium is segregated.

A method may comprise sampling a wellbore fluid; analyzing the wellbore fluid and determining a presence of a graphene-like substrate, a concentration of the graphene-like substrate, or both, in the wellbore fluid; and correlating the presence and the concentration of the graphene-like substrate to at least one subterranean formation characteristic.

A method may comprise sampling a wellbore fluid; analyzing the wellbore fluid and determining a presence of a graphene-like substrate, a concentration of the graphene-like substrate, or both, in the wellbore fluid; and correlating the presence and the concentration of the graphene-like substrate to at least one subterranean formation characteristic.