A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.

A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.

A measurement system and method are presented for measuring one or more parameters of a sample. The measurement system comprises an excitation system and a detection system. The excitation system is configured to generate combined exciting radiation comprising one- or multi-parameter modulation of multiple exciting signals of different types to be applied to at least a portion of a sample under measurements to thereby induce electron emission response of said at least portion of the sample to said combined exciting radiation. The detection system is configured for detecting the electron emission response of the at least portion of the sample and generating measured data indicative of a modulated change of an electrical state of the at least portion of the sample, thereby enabling determination of one or more parameters of the sample from the measured data.

A measurement system and method are presented for measuring one or more parameters of a sample. The measurement system comprises an excitation system and a detection system. The excitation system is configured to generate combined exciting radiation comprising one- or multi-parameter modulation of multiple exciting signals of different types to be applied to at least a portion of a sample under measurements to thereby induce electron emission response of said at least portion of the sample to said combined exciting radiation. The detection system is configured for detecting the electron emission response of the at least portion of the sample and generating measured data indicative of a modulated change of an electrical state of the at least portion of the sample, thereby enabling determination of one or more parameters of the sample from the measured data.

A means to enable the inspection of industrial materials in order to see hidden structural defects that can lead to an early failure, using electromagnetic fields and harmonic waves.

A means to enable the inspection of industrial materials in order to see hidden structural defects that can lead to an early failure, using electromagnetic fields and harmonic waves.

XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.

A method is provided. The method includes the following steps: introducing a first physical vapor deposition (PVD) target and a second PVD target in a PVD system, the first PVD target containing a boron-containing cobalt iron alloy (FeCoB) with an initial boron concentration, and the second PVD target containing boron; determining parameters of the PVD system based on a target boron concentration larger than the initial boron concentration; and depositing a FeCoB film on a substrate according to the parameters of the PVD system.