An analysis method includes: acquiring a photoelectron spectrum and an X-ray-excited Auger spectrum, the photoelectron spectrum being obtained by detecting photoelectrons emitted from a specimen by irradiating the specimen with X-rays, and the X-ray-excited Auger spectrum being obtained by detecting Auger electrons emitted from the specimen by irradiating the specimen with X-rays; calculating a quantitative value of each element included in the specimen based on the photoelectron spectrum; and performing a curve fitting process on the X-ray-excited Auger spectrum by using an electron beam-excited Auger electron standard spectrum, and calculating a quantitative value of an analysis target element in each chemical bonding state included in the specimen.

There is provided a novel Cu bonding wire for semiconductor devices that achieves a favorable shape stability of a 2nd bonded part. The bonding wire includes: a core material of Cu or a Cu alloy; and a coating layer containing a conductive metal other than Cu formed on a surface of the core material, wherein an average size of crystal grains in a wire circumferential direction, obtained by analyzing a surface of the wire by an electron backscattered diffraction (EBSD) method, is 35 nm or more and 140 nm or less, three or more elements selected from the group consisting of Pd, Pt, Au, Ni, and Ag are contained in a region (hereinafter, referred to as a region d.sub.0-10) from the surface to a depth of 10 nm in a concentration profile in a depth direction of the wire obtained by measurement using Auger electron spectroscopy (AES), and concentration conditions (i) and (ii) below are satisfied: (i) for at least three elements out of the three or more elements contained in the region d.sub.0-10, each element have an average concentration in the region d.sub.0-10 of 5 atomic % or more, and (ii) for all elements out of the three or more elements contained in the region d.sub.0-10, each element have an average concentration in the region d.sub.0-10 of 80 atomic % or less.

There is provided a novel Cu bonding wire for semiconductor devices that achieves a favorable shape stability of a 2nd bonded part. The bonding wire includes: a core material of Cu or a Cu alloy; and a coating layer containing a conductive metal other than Cu formed on a surface of the core material, wherein an average size of crystal grains in a wire circumferential direction, obtained by analyzing a surface of the wire by an electron backscattered diffraction (EBSD) method, is 35 nm or more and 140 nm or less, three or more elements selected from the group consisting of Pd, Pt, Au, Ni, and Ag are contained in a region (hereinafter, referred to as a region d.sub.0-10) from the surface to a depth of 10 nm in a concentration profile in a depth direction of the wire obtained by measurement using Auger electron spectroscopy (AES), and concentration conditions (i) and (ii) below are satisfied: (i) for at least three elements out of the three or more elements contained in the region d.sub.0-10, each element have an average concentration in the region d.sub.0-10 of 5 atomic % or more, and (ii) for all elements out of the three or more elements contained in the region d.sub.0-10, each element have an average concentration in the region d.sub.0-10 of 80 atomic % or less.