A reaction analysis device specifies a reaction state of a reaction fluid flowing through a flow reactor. The reaction analysis device includes a processor configured to specify the reaction state of the reaction fluid based on a reaction parameter indicating the reaction state of the reaction fluid which is obtained from a temperature distribution of the reaction fluid immediately after a reaction starts in a flow direction of the reaction fluid.

Fluid flow systems can include one or more resistance temperature detectors (RTDs) in contact with the fluid flowing through the system. One or more RTDs can be operated in a heating mode and a measurement mode. Thermal behavior of the one or more RTDs can be analyzed to characterize a level of deposit formed on the RTD(s) from the fluid flowing through the system. Characterizations of deposition on RTDs operated at different temperatures can be used to establish a temperature-dependent deposition profile. The deposition profile can be used to determine if depositions are likely to form at certain locations in the fluid flow system, such as at a use device. Detected deposit conditions can initiate one or more corrective actions that can be taken to prevent or minimize deposit formation before deposits negatively impact operation of the fluid flow system.

A method of identifying a gas is provided. The method includes providing a gas sensor device comprising at least two stacked metal oxide layers, wherein a change in conductance of the gas sensor device in a presence of a gas varies with a temperature of the stacked metal oxide layers. The method includes bringing the gas into proximity with the stacked metal oxide layers. The method also includes measuring the conductance of the gas sensor device when the gas is in proximity with the stacked layers at multiple temperatures to generate a temperature-conductance profile. The method also includes identifying a gas of interest based on the temperature-conductance profile.

A method for measuring the oil content of a lithium battery separator by using DSC includes the following steps: taking 5-10 mg of an oil-containing separator sample from the lithium battery separator, and taking 5-10 mg of an oil-free separator sample from an oil-free separator; performing an enthalpy test on the oil-free separator sample at room temperature by using a differential scanning calorimeter to obtain a first enthalpy value, and performing an enthalpy test on the oil-containing separator sample by using the differential scanning calorimeter to obtain a second enthalpy value; subtracting the second enthalpy value from the first enthalpy value to obtain a difference, and then dividing the difference by the first enthalpy value to obtain the oil content of the oil-containing separator sample.

A method for measuring the oil content of a lithium battery separator by using DSC includes the following steps: taking 5-10 mg of an oil-containing separator sample from the lithium battery separator, and taking 5-10 mg of an oil-free separator sample from an oil-free separator; performing an enthalpy test on the oil-free separator sample at room temperature by using a differential scanning calorimeter to obtain a first enthalpy value, and performing an enthalpy test on the oil-containing separator sample by using the differential scanning calorimeter to obtain a second enthalpy value; subtracting the second enthalpy value from the first enthalpy value to obtain a difference, and then dividing the difference by the first enthalpy value to obtain the oil content of the oil-containing separator sample.

A reaction analysis device specifies a reaction state of a reaction fluid flowing through a flow reactor. The reaction analysis device includes a processor configured to specify the reaction state of the reaction fluid based on a reaction parameter indicating the reaction state of the reaction fluid which is obtained from a temperature distribution of the reaction fluid immediately after a reaction starts in a flow direction of the reaction fluid.

A gas monitor apparatus includes a sorbent material that adsorbs a target gas based on a concentration of the target gas in a monitored environment and a reference material that does not respond to the target gas. The gas monitor also includes a first thermistor disposed within the sorbent material and a second thermistor disposed within the reference material, the first thermistor to provide a first indication of a first temperature of the sorbent material and the second thermistor to provide a second indication of a second temperature of the reference material. A processing device determines a concentration of the target gas based at least in part on a differential measurement between the first temperature and the second temperature.

Apparatus and methodologies relating to improved gas detection in closed systems are provided. More specifically, the present systems provide for the mixing, conditioning and production of a detection gas comprising, for example, predetermined ratios of nitrogen and methane gas, such predetermined ratios operative for enhancing imaging of gas leaks detected using infrared thermography imaging.

A gas monitor apparatus includes a sorbent material that adsorbs a target gas based on a concentration of the target gas in a monitored environment and a reference material that does not respond to the target gas. The gas monitor also includes a first thermistor disposed within the sorbent material and a second thermistor disposed within the reference material, the first thermistor to provide a first indication of a first temperature of the sorbent material and the second thermistor to provide a second indication of a second temperature of the reference material. A processing device determines a concentration of the target gas based at least in part on a differential measurement between the first temperature and the second temperature.

A fluid sensor for sensing a concentration or composition of a fluid, the sensor comprising: a semiconductor substrate comprising a first etched portion and a second etched portion; a dielectric region located on the semiconductor substrate, wherein the dielectric region comprises a first dielectric membrane located over the first etched portion of the semiconductor substrate, and a second dielectric membrane located over the second etched portion of the semiconductor substrate; two temperature sensing elements on or within the first dielectric membrane and two temperature sensing elements on or within the second dielectric membrane; an output circuit configured to measure a differential signal between the two temperature sensing elements of the first dielectric membrane and the two temperature sensing elements of the second dielectric membrane; wherein the first dielectric membrane is exposed to the fluid and the second dielectric membrane is isolated from the fluid.