A method of assessing galvanic electronic isolation of two components at a joint of the two components includes measuring a first electrical resistance at a first condition across a joint of two components and comparing the first electrical resistance to a threshold resistance. The comparison of the first electrical resistance to the threshold resistance is indicative of a degree of electrical isolation of the two components. A second electrical resistance is measured at a second condition and the second electrical resistance is compared to the first electrical resistance. The result of the comparison of the second electrical resistance to the first electrical resistance is indicative of a type of electrical connection between the two components.

A method of assessing galvanic electronic isolation of two components at a joint of the two components includes measuring a first electrical resistance at a first condition across a joint of two components and comparing the first electrical resistance to a threshold resistance. The comparison of the first electrical resistance to the threshold resistance is indicative of a degree of electrical isolation of the two components. A second electrical resistance is measured at a second condition and the second electrical resistance is compared to the first electrical resistance. The result of the comparison of the second electrical resistance to the first electrical resistance is indicative of a type of electrical connection between the two components.

A gas sensing device comprising a substrate comprising an etched cavity portion and a substrate portion, a dielectric layer disposed on the substrate, wherein the dielectric layer comprises a dielectric membrane, wherein the dielectric membrane is adjacent to the etched cavity portion of the substrate, a heater located within the dielectric layer; a material for sensing a gas; and one or more polysilicon electrodes coupled with the material for sensing a gas.

A gas sensing device comprising a substrate comprising an etched cavity portion and a substrate portion, a dielectric layer disposed on the substrate, wherein the dielectric layer comprises a dielectric membrane, wherein the dielectric membrane is adjacent to the etched cavity portion of the substrate, a heater located within the dielectric layer; a material for sensing a gas; and one or more polysilicon electrodes coupled with the material for sensing a gas.

An environmental conditioning assembly for use in mechanical testing at scales of microns or less. The assembly includes an enclosure housing with an environmental cavity therein. A sample stage is positioned within the environmental cavity and includes an option sample heater. The enclosure housing includes a cavity perimeter clustered around the sample stage, and the enclosure housing isolates the environmental cavity and the sample stage from an environment exterior to the enclosure housing. In an example, an expansion and contraction linkage maintains a sample on the sample stage at a static elevation according to heating or cooling fluctuations within the environmental cavity. A testing instrument access port extends through the enclosure housing into the environmental cavity.

An environmental conditioning assembly for use in mechanical testing at scales of microns or less. The assembly includes an enclosure housing with an environmental cavity therein. A sample stage is positioned within the environmental cavity and includes an option sample heater. The enclosure housing includes a cavity perimeter clustered around the sample stage, and the enclosure housing isolates the environmental cavity and the sample stage from an environment exterior to the enclosure housing. In an example, an expansion and contraction linkage maintains a sample on the sample stage at a static elevation according to heating or cooling fluctuations within the environmental cavity. A testing instrument access port extends through the enclosure housing into the environmental cavity.

The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of: applying a voltage to the polymer film at a temperature of 5° C. to 250° C., while one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.

The present invention relates to a method for measuring metal ion permeability of a polymer film, comprising the steps of: applying a voltage to the polymer film at a temperature of 5° C. to 250° C., while one side of the polymer film is brought into contact with an electrolyte comprising metal ions, an organic solvent and an aqueous solvent; and measuring the change rate of resistance or change rate of current of the polymer film according to time, after the voltage is applied, and a device for measuring metal ion permeability of a polymer film used therefor.

An aerosol-generating device includes an electrical power supply, a cavity structure configured to receive an aerosol-generating article, and a plurality of semiconductor heaters within the cavity structure. Each of the plurality of semiconductor heaters includes a substrate layer and a heating layer on the substrate layer. The heating layer is a continuous layer. The aerosol-generating device includes a controller configured to control a supply of electrical power from the electrical power supply to each of the plurality of semiconductor heaters.

An aerosol-generating device includes an electrical power supply, a cavity structure configured to receive an aerosol-generating article, and a plurality of semiconductor heaters within the cavity structure. Each of the plurality of semiconductor heaters includes a substrate layer and a heating layer on the substrate layer. The heating layer is a continuous layer. The aerosol-generating device includes a controller configured to control a supply of electrical power from the electrical power supply to each of the plurality of semiconductor heaters.