Patent classifications
G01N29/2462
HIGH-TEMPERATURE ULTRASONIC SENSOR
A sensor for ultrasonically measuring a portion of a structure having a temperature significantly above room-temperature, the sensor comprising: a high-temperature portion for intimate contact with the structure, the high-temperature portion comprising at least: at least one transducer for converting a first signal to an ultrasonic transmit signal, and for converting an ultrasonic reflected signal to a second signal; a low-temperature portion comprising at least: at least one digital sensor interface (DSI) to which the transducer is electrically connected, the DSI being configured to transmit the first electrical signal and receive the second electrical signal, and to generate an A-scan signal based on the first and second electrical signals; a wireless interface for transmitting a digital signal based directly or indirectly on at least said A-scan signal; and a battery for powering the DSI and the wireless interface; and an elongated member containing one or more electrical conductors for conducting the first and second signals between the transducer and the DSI, the elongated member being configured to offset the low-temperature portion a sufficient distance away from the high-temperature portion such that the low-temperature portion is subjected to significantly less heat from the structure compared to the high-temperature portion.
SURFACE ACOUSTIC WAVE SENSOR COATING
A surface acoustic wave sensor in which instrument drift resulting from accumulated surface contamination is minimized. The sensor includes a piezeoelectric substrate defined by an outer surface and a plurality of interdigitated electrodes mounted thereon. The electrodes are defined by one or more exposed portions and an unexposed portion abutting the outer surface of the piezoelectric substrate. An inert coating layer on the outer surface of the piezoelectric substrate and the exposed portions of the electrodes is provided, and can be a perfluoro-silane type compound, a perfluoro-trichloro-silane type compound, a perfluoro-acrylate type compound, polytetrafluoroethylene, or heptadecafluorodecyltrimethoxysilane.
SENSING SYSTEM
A sensing system includes: a surface acoustic wave sensor with a first surface acoustic wave device-and a second surface acoustic wave device; a sensing apparatus detecting an electrical characteristic of the first and second surface acoustic wave devices connected to the surface acoustic wave sensor; and a control apparatus calculating a physical quantity acting on one of a target to which the surface acoustic wave sensor is attached and the surface acoustic wave sensor. The sensitivity ratio of a first physical quantity and the sensitivity of a second physical quantity are different, and a third physical quantity is removable by averaging. The control apparatus removes the first physical quantity based on the results of a comparison operation on sensor signals from the first and second surface acoustic wave elements, uses the averaging process to remove the third physical quantity, and thereby calculates the second physical quantity.
Nanoindenter ultrasonic probe tip
A multimode ultrasonic probe tip and transducer integrated into a micro tool, such as a nano indenter or a nano indenter interfaced with a Scanning Probe Microscope (SPM) is described. The tip component may be utilized to determine mechanical properties or characteristics of a sample, including for example, complex elastic modulus, hardness, friction coefficient, and strain and stress at nanometer scales and high frequencies. The tip component is configured to operate at multi-resonant frequencies providing sub-nanometer vertical resolution. The tip component may be quasi-statistically calibrated and contact mechanics constitutive equations may be utilized to derive mechanical properties of a sample. Contact mechanical impedance and acoustic impedance may also be compared.
SYSTEM FOR MEASURING MATERIAL THICKNESSES AT HIGH TEMPERATURES
A sheet-forming apparatus including a crucible for holding a melt of material and a solid sheet of the material disposed within the melt, a crystallizer disposed above the crucible and configured to form the sheet from the melt, and an ultrasonic measurement system disposed adjacent the crystallizer, the ultrasonic measurement system comprising at least one ultrasonic measurement device including a waveguide coupled to an ultrasonic transducer for directing an ultrasonic pulse through the melt.
ULTRASONIC TEST SYSTEM, ULTRASONIC TEST METHOD AND AIRCRAFT STRUCTURAL OBJECT
According to one implementation, an ultrasonic test system includes an ultrasonic propagating body and an optical fiber sensor. The ultrasonic propagating body changes at least one traveling direction of at least one ultrasonic wave which propagates in a test target. The optical fiber sensor detects the at least one ultrasonic wave of which the at least one traveling direction has been changed by the ultrasonic propagating body.
Surface acoustic wave resonant sensor
A surface acoustic wave resonant sensor for measuring a sample comprising a single port surface acoustic wave (SAW) resonator comprising an interdigital transducer and at least one reflective grating. The sensor is provided with a region for receiving the sample, said region being in communication with the at least one reflective grating and the IDT is separated acoustically and electrically from the region for receiving a sample such that the IDT is not mass sensitive to the sample. The sensor is especially suitable for bio sensing applications.
Surface acoustic wave sensor
A surface acoustic wave (SAW) sensor includes a surface acoustic wave material and a comb-teeth electrode. The surface acoustic wave material is to be arranged at a place where the surface acoustic wave material is distorted by physical quantity such as stress. The comb-teeth electrode is arranged on the surface of the surface acoustic wave material to excite a surface acoustic wave to the surface acoustic wave material. The surface acoustic wave material has a sapphire board and a ScAlN film arranged on a surface of the sapphire board.
Photoacoustic measurement device and probe for photoacoustic measurement device
An object of the invention is to reduce the size of a probe for a photoacoustic measurement device. A light guide 71 is arranged such that one of a two side surfaces 71a is closer to a probe axis C which faces a subject than the other side surface and a light emission end surface 71c is closer to the probe axis C than a light incident end surface 71b when the probe is used. When a refractive index of the light guide 71 with respect to the light is n1 and a refractive index of a medium around the light guide with respect to the light during photoacoustic measurement is n2 (n2<n1), the light emission end surface 71c is obliquely formed such that an angle α[°] (where 90°−arcsin(n2/n1)<α<90°) is formed between the light emission end surface 71c and the side surface 71a.
SENSOR APPARATUS
A sensor apparatus includes: an element substrate; a detecting section disposed on an upper surface of the element substrate, the detecting section including a reaction section having an immobilization film to detect an analyte; a first IDT electrode configured to generate an acoustic wave which propagates toward the reaction section, and a second IDT electrode configured to receive the acoustic wave which has passed through the reaction section; and a protective film located on the upper surface of the element substrate so as to cover the first IDT electrode, the second IDT electrode, and at least part of the immobilization film, the protective film extending between and contacting with the immobilization film and at least one of the first IDT electrode and the second IDT electrode.