G01N2201/1247

MEASURING A SIZE DISTRIBUTION OF NUCLEIC ACID MOLECULES IN A SAMPLE
20180106717 · 2018-04-19 ·

A process for measuring a size distribution of a plurality of nucleic acid molecules, the process comprising: labeling the nucleic acid molecules with a fluorescent dye comprising a plurality of fluorescent dye molecules to form labeled nucleic acid molecules, such that a number of fluorescent dyes molecules attached to each nucleic acid molecule is reliably proportional to the number of base pairs in the nucleic acid molecule, the fluorescent dye molecules having a first florescence spectrum; producing, by the labeled nucleic acid molecules, the first florescence spectrum in response to irradiating the labeled nucleic acid molecules at the first wavelength; and detecting the first florescence spectrum to measure the size distribution of the plurality of nucleic acid molecules.

Methods for manufacturing semiconductor device and for detecting end point of dry etching

A via hole is accurately formed in an interlayer insulating film over a metal wiring. Of emission spectra of plasma to be used for dry etching of the interlayer insulating film, the emission intensities of at least CO, CN, and AlF are monitored such that an end point of the dry etching of the interlayer insulating film is detected based on the emission intensities thereof.

Method of detecting defect location using multi-surface specular reflection

A method for detecting defects includes directing a scanning beam to a location on a surface of a transparent sample, measuring top and bottom surface specular reflection intensity, and storing coordinate values of the first location and the top and bottom surface specular reflection intensity in a memory. The method may further include comparing the top surface specular reflection intensity measured at each location with a first threshold value, comparing the bottom surface specular reflection intensity measured at each location with a second threshold value, and determining if a defect is present at each location and on which surface the defect is present. The method may further include comparing the top surface specular reflection intensity measured at each location with a first intensity range, comparing the bottom surface specular reflection intensity measured at each location with a second intensity range, and determining on which surface the defect is present.

METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICE AND FOR DETECTING END POINT OF DRY ETCHING

A via hole is accurately formed in an interlayer insulating film over a metal wiring. Of emission spectra of plasma to be used for dry etching of the interlayer insulating film, the emission intensities of at least CO, CN, and AlF are monitored such that an end point of the dry etching of the interlayer insulating film is detected based on the emission intensities thereof.

Methods for manufacturing semiconductor device and for detecting end point of dry etching

A via hole is accurately formed in an interlayer insulating film over a metal wiring. Of emission spectra of plasma to be used for dry etching of the interlayer insulating film, the emission intensities of at least CO, CN, and AlF are monitored such that an end point of the dry etching of the interlayer insulating film is detected based on the emission intensities thereof.

Highly Sensitive System and Method for Analysis of Troponin

The invention provides methods, compositions, kits, and systems for the sensitive detection of cardiac troponin, Such methods, compositions, kits, and systems are useful in diagnosis, prognosis, and determination of methods of treatment in conditions that involve release of cardiac troponin.

METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICE AND FOR DETECTING END POINT OF DRY ETCHING

A via hole is accurately formed in an interlayer insulating film over a metal wiring. Of emission spectra of plasma to be used for dry etching of the interlayer insulating film, the emission intensities of at least CO, CN, and AlF are monitored such that an end point of the dry etching of the interlayer insulating film is detected based on the emission intensities thereof.

MULTI-SPECTRAL GAS ANALYZER SYSTEM WITH MULTIPLE SETS OF SPECTRAL SENSITIVITY

A system and method for multi-spectral gas concentration analysis that includes using a library of multiple sets of optimized spectral sensitivities prepared in advance, and a multi-spectral IR gas analyzer tuned to a set of optimized spectral sensitivity. The multi-spectral IR gas analyzer measures spectral absorption of gas using one or more different sets of optimized spectral sensitivities.

Onboard device and method for analyzing fluid in a heat engine
09562850 · 2017-02-07 · ·

A method for controlling a spectrometer for analyzing a product includes steps of: acquiring a measurement representative of the operation of a light source, determining, depending on the measurement, a value of supply current of the light source, and/or a value of integration time of light-sensitive cells of a sensor, disposed on a route of a light beam emitted by the light source and having interacted with a product to be analyzed, and if the integration time and/or supply current value is between threshold values, supplying the light source with a supply current corresponding to the determined supply current value, adjusting the integration time of a light-sensitive cell to the determined integration time value, and acquiring light intensity measurements supplied by the sensor, enabling a spectrum to be formed.

Onboard device and method for analyzing fluid in a heat engine
09562851 · 2017-02-07 · ·

The present invention relates to a method for controlling a spectrometer for analyzing a product, the spectrometer including a light source including several light-emitting diodes having respective emission spectra covering in combination an analysis wavelength band, the method including steps of: supplying at least one of the light-emitting diodes with a supply current to switch it on, measuring a light intensity emitted by the light source by measuring a current at a terminal of at least another of the light-emitting diodes maintained off, determining, according to each light intensity measurement, a setpoint value of the supply current of each diode that is on, and regulating the supply current of each diode that is on so that it corresponds to the setpoint value.