G01N2223/0565

Strain mapping in TEM using precession electron diffraction

A sample material is scanned with a transmission electron microscope (TEM) over multiple steps having a predetermined size at a predetermined angle. Each scan at a predetermined step and angle is compared to a template, wherein the template is generated from parameters of the material and the scanning. The data is then analyzed using local mis-orientation mapping and/or Nye's tensor analysis to provide information about local strain states.

BONDING WIRE FOR SEMICONDUCTOR DEVICES
20250372565 · 2025-12-04 ·

There is provided a novel Cu bonding wire for semiconductor devices that achieves a favorable shape stability of a 2nd bonded part. The bonding wire includes: a core material of Cu or a Cu alloy; and a coating layer containing a conductive metal other than Cu formed on a surface of the core material, wherein an average size of crystal grains in a wire circumferential direction, obtained by analyzing a surface of the wire by an electron backscattered diffraction (EBSD) method, is 35 nm or more and 140 nm or less, three or more elements selected from the group consisting of Pd, Pt, Au, Ni, and Ag are contained in a region (hereinafter, referred to as a region d.sub.0-10) from the surface to a depth of 10 nm in a concentration profile in a depth direction of the wire obtained by measurement using Auger electron spectroscopy (AES), and concentration conditions (i) and (ii) below are satisfied: (i) for at least three elements out of the three or more elements contained in the region d.sub.0-10, each element have an average concentration in the region d.sub.0-10 of 5 atomic % or more, and (ii) for all elements out of the three or more elements contained in the region d.sub.0-10, each element have an average concentration in the region d.sub.0-10 of 80 atomic % or less.