A method for controlling the crystallographic orientation of at least one grain of a turbo engine part. The method includes emitting a beam of electromagnetic radiation through an elementary volume of the part and record diffraction information on the electromagnetic radiation passing through the part. This step is repeated on a given area of the part. The method further includes determining the crystal spatial orientation of each of said elementary volumes and deducting the presence of at least one first crystallographic grain for which the elementary volumes are oriented according to the same crystallographic orientation. The method further includes calculating the angular difference between the crystal spatial orientation of said first grain and a predetermined direction taken from the part and comparing it to a first predetermined threshold value and determining a state of use of the part.

Estimating wear on bottom hole assembly (BHA) components utilizes a rock hardness index using analysis of drill cutting. Estimating the amount of wear on borehole assembly components comprises measuring the rock properties in drilled cuttings from a borehole. A hardness value is assigned to each mineral present in the drilled cuttings. A hardness index is calculated for a drilled borehole interval. A wear resistance factor is assigned to each BHA component of the BHA. The wear resistance factor depends on the wear resistance of each BHA component. A wear value for each BHA component is calculated based on the hardness index for the drilled borehole interval, the wear resistance of the BHA component, and drilling parameters.

The invention relates to a method for processing images obtained by a diffraction detector, of a crystalline or polycrystalline material, in which a first image of the material is acquired in a state of reference as well as a second image of the material in a deformed state. The invention is characterised in that, in a calculator, during a first step (E6, E12), a current elastic deformation gradient tensor F.sup.e is given a value determined by calculation, during a second step (E7), the current displacement field induced by the tensor F.sup.e is calculated, during a third step (E8), third digital values of a deformed image {hacek over (g)}(x)=g(x+u(x)) corrected by the current displacement field are calculated, and during an iterative algorithm, iterations of the second and third steps (E12, E7, E8) are carried out on modified values of the tensor r F.sup.e until a convergence criterion is met in relation to the correction to the current value of F.sup.e.

A method for displaying measurement results from X-ray diffraction measurement, in which a sample is irradiated with X-rays and the X-rays diffracted by the sample are detected by an X-ray detector, comprises: (1) forming a one-dimensional diffraction profile by displaying, on the basis of output data from an X-ray detector, a profile in which one orthogonal coordinate axis shows 2 angle values and another orthogonal coordinate axis shows X-ray intensity values; (2) forming a two-dimensional diffraction pattern by linearly displaying X-ray intensity data, for each 2 angle value and on the basis of output data from the X-ray detector; the X-ray intensity data being present in the circumferential direction of a plurality of Debye rings formed at each 2 angle by diffracted X-rays; and (3) displaying the two-dimensional diffraction pattern and the one-dimensional diffraction profile so as to be aligned such that the 2 angle values of both coincide with each other.

Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering. In other aspects, model based measurements are performed based on the zero diffraction order beam, and measurement performance of the full beam x-ray scatterometry system is estimated and controlled based on properties of the measured zero order beam.

A method for measuring a fiber orientation degree includes: irradiating a sample formed of a composite material containing discontinuous carbon fibers with an X-ray to acquire an X-ray diffraction image; calculating an angle (2).sub.A of a peak originating from a crystal face of graphite; calculating a correction coefficient of a thickness of the sample; calculating an upper limit (2).sub.B of the peak of the crystal face of graphite; calculating a diffraction sensitivity I.sub.C() of the peak originating from the crystal face of graphite by correcting an integrating range with the correction coefficient and integrating the X-ray diffraction image with respect to a diffraction angle (2); and calculating a fiber orientation degree Sd() by the method of Hermans from the diffraction sensitivity I.sub.C().

Methods and systems for characterizing dimensions and material properties of semiconductor devices by full beam x-ray scatterometry are described herein. A full beam x-ray scatterometry measurement involves illuminating a sample with an X-ray beam and detecting the intensities of the resulting zero diffraction order and higher diffraction orders simultaneously for one or more angles of incidence relative to the sample. The simultaneous measurement of the direct beam and the scattered orders enables high throughput measurements with improved accuracy. The full beam x-ray scatterometry system includes one or more photon counting detectors with high dynamic range and thick, highly absorptive crystal substrates that absorb the direct beam with minimal parasitic backscattering. In other aspects, model based measurements are performed based on the zero diffraction order beam, and measurement performance of the full beam x-ray scatterometry system is estimated and controlled based on properties of the measured zero order beam.

A method and a system for resolving a crystal structure of a crystal at atomic resolution by collecting X-ray diffraction images. The method includes the steps: a) ejecting a droplet of fluid comprising single or multiple of crystal into an ultrasonic acoustic levitator; b) levitating the droplet of fluid with the crystal in the ultrasonic acoustic levitator; b) monitoring the position and the spinning of the droplet with a visualization apparatus; c) applying X-ray to the crystal, the X-ray stemming from an X-ray source; and d) detecting the X-ray diffraction images from the crystal irradiated by the X-ray source by an X-ray detector being capable to capture two dimensional diffraction patterns.

Provided is a cold storage material having a large thermal capacity in a ultra-low temperature range of 10 K or less and being highly durable against thermal shock and mechanical vibration. The cold storage material contains a rare earth oxysulfide ceramic represented by the general formula R.sub.2O.sub.2S (wherein R is one or more kinds of rare earth elements selected from La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y), and Al.sub.2O.sub.3 having a specific surface area of 0.3 m.sup.2/g to 11 m.sup.2/g is added to the cold storage material.

A method of detecting an anomaly in a crystallographic structure, the method comprising: illuminating the structure with x-ray radiation in a known direction relative to the crystallographic orientation; positioning the structure such that its crystallographic orientation is known; detecting a pattern of the diffracted x-ray radiation transmitted through the structure; generating the simulated pattern based on the known direction relative to the crystallographic orientation; comparing the detected pattern to a simulated pattern for x-ray radiation illuminating in the known direction; and, detecting the anomaly in the crystallographic structure based on the comparison.