Disclosed herein is a system for x-ray inspection. The system comprises an x-ray emitter. The system also comprises an x-ray sensor array comprising a first x-ray sensor, a second x-ray sensor adjacent the first x-ray sensor, and a coupler movably coupling the first x-ray sensor to the second x-ray sensor. The first x-ray sensor is movable into a plurality of orientations relative to the second x-ray sensor via the coupler. The system further comprises an imaging device to generate an inspection image based on information from the x-ray sensor array.

A pattern evaluation device has measurement or inspection conditions, supplied for the measurement and inspection of a replica produced by transferring a pattern for a semiconductor wafer or the like, which can be easily set, and with which recipes can be easily generated, when measurement and inspection conditions for the semiconductor wafer or the like and recipes in which these conditions are stored have been prepared in advance. The pattern evaluation device in which a pattern formed on the semiconductor wafer is evaluated on the basis of image data or signal waveforms obtained on the basis of beam irradiation or probe scanning of the semiconductor wafer, wherein the device conditions for evaluating the semiconductor wafer are converted to device conditions for evaluating a replica obtained by transferring a part of a pattern of the semiconductor wafer, and the converted device conditions are used to evaluate the replica.

An x-ray imaging system includes a movable x-ray imager that is configured to be handheld during operation and includes a first backscatter x-ray detector assembly. The system also includes a second backscatter x-ray detector assembly that is removably attachable with the movable x-ray imager. The movable x-ray imager and the second backscatter x-ray detector include complementary attachment features configured to secure, removably, the second backscatter x-ray detector with the movable x-ray imager in an arrangement having the second and first backscatter x-ray detectors fixedly oriented with respect to each other.

The present specification provides a detector for an X-ray imaging system. The detector includes at least one high resolution layer having high resolution wavelength-shifting optical fibers, each fiber occupying a distinct region of the detector, at least one low resolution layer with low resolution regions, and a single segmented multi-channel photo-multiplier tube for coupling signals obtained from the high resolution fibers and the low resolution regions.

A movable x-ray imager includes a first backscatter x-ray detector assembly. The system also includes a second backscatter x-ray detector assembly that is removably attachable with the movable x-ray imager. The movable x-ray imager and the second backscatter x-ray detector include complementary attachment features configured to secure, removably, the second backscatter x-ray detector with the movable x-ray imager in an arrangement having the second and first backscatter x-ray detectors fixedly oriented with respect to each other.

X-ray spectrometer comprising an X-ray source emitting X-ray radiation onto a sample, a collimator arrangement for collimating X-ray radiation that has passed through a diaphragm arrangement, the collimator arrangement comprising a modified Soller slit with mutually parallel lamellae forming a plurality of slit-shaped passages, at least a portion of the slit-shaped passages having partition walls aligned substantially perpendicularly to the slit-shaped passages, the partition walls being non-transmissive to X-ray radiation and restricting the transverse divergence of the X-ray radiation passing through the collimator arrangement in a direction transversely with respect to the diffraction plane of the X-ray radiation coming from the sample. Significantly faster spatially resolved measurements can thus be carried out.

Provided is an X-ray analysis apparatus including: a goniometer including an incident-side arm extending in a first direction, a fixing portion, and a receiving-side arm; an X-ray source portion, which is arranged on the incident-side arm and generates an X-ray source extending in a second direction, which crosses the first direction; a support base, which is arranged on the fixing portion, and is configured to support a sample; a parallel slit, which is arranged on the fixing portion, and is configured to limit a line width along the second direction of the X-ray source generated by the X-ray source portion; and a detector, which is arranged on the receiving-side arm, and is configured to detect a scattered X-ray generated by the sample.

An electron diffraction imaging system for imaging the three-dimensional structure of a single target molecule of a sample uses an electron source that emits a beam of electrons toward the sample, and a two-dimensional detector that detects electrons diffracted by the sample and generates an output indicative of their spatial distribution. A sample support is transparent to electrons in a region in which the sample is located, and is rotatable and translatable in at least two perpendicular directions. The electron beam has an operating energy between 5 keV and 30 keV, and beam optics block highly divergent electrons to limit the beam diameter to no more than three times the size of the sample molecule and provide a lateral coherence length of at least 15 nm. An adjustment system adjusts the sample support position in response to the detector output to center the target molecule in the beam.

A multi-charged particle beam inspection apparatus includes a movable stage to place thereon an inspection substrate where plural dies each with the same pattern are arranged in a predetermined direction, a pitch acquisition circuit to acquire an arrangement pitch of plural dies, a magnification control circuit to control, when imaging the inspection substrate with multi-charged particle beams while continuously moving the stage, magnification of the multi-charged particle beams to be a controlled magnification such that the arrangement pitch of the plural dies becomes a natural number (2 or greater) multiple of an imaging region cycle in the predetermined direction of plural imaging regions to be individually imaged by each beam at each arrangement position of the multi-charged particle beams, and an acquisition mechanism to acquire inspection images of the plural dies on the inspection substrate, using the multi-charged particle beams whose magnification has been controlled to be the controlled magnification.

A method of operating a charged particle beam device is disclosed, including passing each of a plurality of beamlets through a deflector and a scanner, in that order. Each of the beamlets is focused with an objective lens on a sample to form a plurality of focal spots, forming an array. A first beamlet is focused on a first spot and a second beamlet is focused on a second spot. In a centered configuration of the device, each of the plurality of beamlets is directed by the deflector toward a coma free point. In a beamlet-displaced configuration of the device, the scanner is scanned such that the first beamlet passes through an acceptable aberrations point, the first beamlet scanning a displaced first field of view; and the first spot is displaced from the regular first focal spot to a displaced first focal spot.