System and method for imaging an integrated circuit (IC). The imaging system comprises an x-ray source including a plurality of spatially and temporally addressable electron sources, an x-ray detector arranged such that incident x-rays are oriented normal to an incident surface of the x-ray detector and a three-axis stage arranged between the x-ray source and the x-ray detector, the three-axis stage configured to have mounted thereon an integrated circuit through which x-rays generated by the x-ray source pass during operation of the imaging system. The imaging system further comprises at least one controller configured to move the three-axis stage during operation of the imaging system and selectively activate a subset of the electron sources during movement of the three-axis stage to acquire a set of intensity data by the x-ray detector as the three-axis stage moves along a three-dimensional trajectory.

Provided herein are methods and apparatus for characterizing high aspect ratio (HAR) structures of fabricated or partially fabricated semiconductor devices. The methods involve using small angle X-ray scattering (SAXS) to determine average parameters of an array of HAR structures. In some implementations, SAXS is used to analyze symmetry of HAR structures in a sample and may be referred to as tilted structural symmetry analysis-SAXS (TSSA-SAXS) or TSSA. Analysis of parameters such as tilt, sidewall angle, bowing, and the presence of multiple tilts in HAR structures may be performed.

A method includes obtaining a layout of a circuit pattern implemented on a semiconductor wafer, and identifying one or more polygons in the layout based on a length criteria. One or more measurement gauges are placed on the identified polygons to thereby obtain measured polygons. A scanning electron microscope (SEM) image of the circuit pattern is obtained. The SEM image is aligned with the layout including the measured polygons. A critical dimension of one or more objects in the SEM image is measured. The one or more objects correspond to the one or more polygons. Based on the measured critical dimension, it is determined whether the circuit pattern is acceptable.

A metrology target includes a first set of pattern elements compatible with a first metrology mode along one or more directions, and a second set of pattern elements compatible with a second metrology mode along one or more directions, wherein the second set of pattern elements includes a first portion of the first set of pattern elements, and wherein the second set of pattern elements is surrounded by a second portion of the first set of pattern elements not included in the second set of pattern elements.

There are disclosed a method of producing an XRF readable mark, the XRF readable mark and a component comprising thereof. The method comprises providing an XRF marking composition with specific relative concentrations of one or more chemical elements and fabricating a multilayer structure of the XRF readable mark. The relative concentrations are selected such that in response to irradiation of the XRF marking composition by XRF exciting radiation, the XRF marking composition emits an XRF signal indicative of a predetermined XRF signature. Fabricating the multilayer structure comprises implementing an attenuation layer with at least one element exhibiting high absorbance for an XRF exciting radiation and/or an XRF background; and implementing a marking layer comprising said XRF marking composition.

This fluorescent X-ray analysis apparatus is provided with an X-ray irradiation unit 20 for irradiating a sample S with: X-rays, having an energy that exceeds the energy absorption edge value of Ag which is selected as a measurement target element, and that is no greater than the energy absorption edge value of Sn which is an adjacent element having a higher energy absorption edge value than Ag; and X-rays having an energy exceeding the energy absorption edge value of Sn which is selected as a measurement target element.

An x-ray inspection system includes an x-ray source, a sample support for supporting a sample to be inspected, where the sample support includes a support surface extending in a horizontal plane, an x-ray detector, and a sample support positioning assembly for positioning the sample support relative to the x-ray source or x-ray detector. The sample positioning assembly includes a vertical positioning mechanism for moving the sample support in a vertical direction, orthogonal to the horizontal plane, and a first horizontal positioning mechanism for moving both the sample support and the vertical positioning mechanism in a first horizontal direction. This arrangement allows for accurate movement of the sample to different imaging positions in the horizontal plane and a low power vertical positioning mechanism to be used.

A system and method for automating programming of an industrial use x-ray inspection machine, utilizing an artificial intelligence (AI) engine in both a navigator level and planner level stage of an x-ray parts inspection machine, the AI engine performing at least one of identifying, classifying and counting a sample, assessing location(s) to be inspected on the sample, and implementing a test or count criteria for each assessed location on the sample. The AI engine removes the typical interactions and setup procedures performed by the machine operator, thus enabling a higher degree of system automation and accuracy.

A system and method for redistributing photoexcited electrons and generate local currents within an optical spot on ultrafast timescales achieving in high-speed, high-resolution control of opto-electronic phenomena is disclosed. Selectively addressing sub-populations of photoexcited electrons within the distribution is necessary. By exploiting the spatial intensity variations in an ultrafast light pulse, local surface fields are generated within the photoexcitation spot of a doped semiconductor, which pull apart the photoexcited electrons into two separate distributions. This redistribution process can be controlled via the spatial profile and intensity of the photoexciting pulse.

The present invention relates to an X-ray fluorescence, XRF, spectrometer, for measuring X-ray fluorescence emitted by a target, wherein the XRF spectrometer comprises an X-ray tube with an anode to emit a divergent X-ray beam, a capillary lens that is configured to focus the divergent X-ray beam on the target, an aperture system that is positioned between the anode of the X-ray tube and the capillary lens and comprises at least one pinhole, and a detector that is configured for detecting X-ray fluorescence radiation emitted by the target, wherein the at least one pinhole is configured for being inserted into the divergent X-ray beam and for reducing a beam cross section of the divergent X-ray beam between the anode and the capillary lens. The present invention further relates to an aperture system for a spectrometer, to the use of an aperture system for adjusting the focal depth of a spectrometer and to a method for adjusting the focal depth of as spectrometer.