A multi-electron beam inspection apparatus includes a multi-detector that includes a plurality of detection sensors each of which detects a secondary electron beam emitted due to that a target object is irradiated with a primary electron beam individually preset in multiple secondary electron beams emitted because the target object is irradiated with multiple primary electron beams, a reference image data generation circuit that generates reference image data of a position irradiated with each primary electron beam, based on design data serving as a basis of the pattern formed on the target object, a synthesis circuit that synthesizes, for each primary electron beam, the reference image data of the position irradiated with a primary electron beam concerned and portions of reference image data of positions irradiated with other primary electron beams different from the primary electron beam concerned, and a comparison circuit that compares synthetic reference image data having been synthesized, and secondary electron image data based on a value detected by the detection sensor which detects a secondary electron beam due to irradiation with the primary electron beam concerned.

A pattern inspection apparatus includes a column to scan a substrate on which a pattern is formed, using multi-beams composed of a plurality of electron beams, a stage to mount the substrate thereon and to be movable, a detector to detect secondary electrons emitted from the substrate because the substrate is irradiated with the multi-beams, and a drive mechanism to move the detector in order to follow movement of the stage.

The purpose of the present invention is to provide a pattern measurement device for quantitatively evaluating a pattern formed using a directed self-assembly (DSA) method with high accuracy. The present invention is a pattern measurement device for measuring distances between patterns formed in a sample, wherein the centroids of a plurality of patterns included in an image are determined; the inter-centroid distances, and the like, of the plurality of centroids are determined; and on the basis of the inter-centroid distances, and the like, of the plurality of centroids, a pattern meeting a specific condition is distinguished from patterns different from the pattern meeting the specific condition or information is calculated about the number of the patterns meeting the specific condition, the size of an area including the patterns meeting the specific condition, and the number of imaginary lines between the patterns meeting the specific condition.

The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.

Methods and systems for generating X-ray illumination from a laser produced plasma (LPP) employing a liquid sheet jet target are presented herein. A highly focused, short duration laser pulse is directed to a liquid sheet jet target. The interaction of the focused laser pulse with the sheet jet target ignites a plasma. In some embodiments, the liquid sheet jet is generated by a convergent capillary nozzle or a convergent, planar cavity nozzle. In some embodiments, the target material includes one or more elements having a relatively low atomic number. In some embodiments, the liquid sheet jet LPP light source generates multiple line or broadband X-ray illumination in a soft X-ray (SXR) spectral range used to measure structural and material characteristics of semiconductor structures. In some embodiments, Reflective, Small-Angle X-ray Scatterometry measurements are performed with a liquid sheet jet LPP illumination source as described herein.

Methods and systems for performing simultaneous X-ray Fluorescence (XRF) and small angle x-ray scattering (SAXS) measurements over a desired inspection area of a specimen are presented. SAXS measurements combined with XRF measurements enables a high throughput metrology tool with increased measurement capabilities. The high energy nature of x-ray radiation penetrates optically opaque thin films, buried structures, high aspect ratio structures, and devices including many thin film layers. SAXS measurements of a particular location of a planar specimen are performed at a number of different out of plane orientations. This increases measurement sensitivity, reduces correlations among parameters, and improves measurement accuracy. In addition, specimen parameter values are resolved with greater accuracy by fitting data sets derived from both SAXS and XRF measurements based on models that share at least one material parameter. The fitting can be performed sequentially or in parallel.

A method for evaluating an array of high aspect ratio (HAR) structures on a sample includes illuminating the sample with an x-ray beam along a first axis parallel to within two degrees to the HAR structures in the array and sensing a first pattern of small angle x-ray scattering (SAXS) scattered from the sample while illuminating the sample along the first axis. The sample is illuminated with the x-ray beam along a second axis that is oblique to the HAR structures in the array, and a second pattern of the SAXS scattered from the sample is sensed while illuminating the sample along the second axis. Information is extracted with respect to the HAR structures based on the first and second patterns.

Provided is an image processing system capable of estimating a three-dimensional shape of a semiconductor pattern or a particle by solving problems of measurement reduction in a height direction and taking an enormous amount of time at a time of acquiring learning data. The image processing system according to the disclosure stores a detectable range of a detector provided in a charged particle beam device in a storage device in advance, generates a simulated image of a three-dimensional shape pattern using the detectable range, and learns a relationship between the simulated image and the three-dimensional shape pattern in advance.

A defect observation apparatus includes a storage unit configured to store defect information about defects detected by an external inspection apparatus; a first imaging unit configured to capture an image of a defect using a first imaging condition and a second imaging condition; a control unit configured to correct positional information on the defect using the image captured with the first imaging unit; and a second imaging unit configured to capture an image of the defect based on the corrected positional information.

An inspection method for a substrate, the inspection method including: providing an electron beam having a first polarization state to a sample of the semiconductor substrate; detecting a first response signal of the sample caused by interaction of the electron beam having the first polarization state with the sample; providing an electron beam having a second polarization state to the sample of the semiconductor substrate; detecting a second response signal of the sample caused by interaction of the electron beam having the second polarization state with the sample; and determining a geometric or material property of the sample, based on the first response signal and the second response signal.