A method including inspecting, using an X-ray transmission image, internal defects in a TSV formed in a semiconductor wafer, and detecting the X-rays, and processing an X-ray transmission image. Therein, the detection of X-rays is configured such that: the detection azimuth of the X-rays, and the detection elevation angle of the X-rays relative to the X-ray source are determined on the basis of information on the arrangement interval, depth, and planar shape of structures formed in the sample. The angle of rotation of a rotating stage on which the sample is mounted is adjusted in accordance with the detection azimuth which has been determined, and the X-rays that have been transmitted through the sample are detected with the position of the detector set to the detection elevation angle which has been determined.

A sample holder for holding a sample during an X-ray imaging process includes a sample placement surface on which the sample is placed for positioning the sample in a depth direction of the sample holder. The sample holder also includes a first alignment portion for aligning the sample in a width direction of the sample holder, and a second alignment portion for aligning the sample in a height direction of the sample holder.

A method of non-destructive detection of surface and near surface abnormalities in a metallic product. The method comprises positioning a sample having a surface under a source of an incident radiation. The surface of the sample is then irradiated with the incident radiation from the source. A scattered radiation is detected and a radiation pattern from the detected scattered radiation is produced. Said radiation pattern is then analysed and the output indicative of the scattered radiation from the sample is produced. Said produced output is then compared with a threshold value, the threshold value indicative of a maximum acceptable detected surface abnormality. Finally, the presence of a surface abnormality is identified when the output exceeds the threshold value.

Provided is an inspection method including providing a pattern layout including measurement points, generating a first measurement map including first measurement regions that overlap the measurement points and do not overlap each other in a two-dimensional plan view, providing preliminary measurement regions on the measurement points, producing a polygon by grouping ones of the preliminary measurement regions that overlap each other in the two-dimensional plan view, providing a second measurement region on a center of the polygon, selecting the second measurement region when all of the measurement points in the polygon overlap the second measurement region in the two-dimensional plan view, generating a second measurement map including the selected second measurement region, generating a third measurement map by using the first and second measurement maps, and inspecting patterns on a semiconductor substrate by using the third measurement map. The third measurement map includes the selected second measurement region and ones of the first measurement regions that do not overlap the selected second measurement region in the two-dimensional plan view.

A data generating method includes: an atomic model generating step of generating one or more three-dimensional atomic models corresponding to a nanomaterial to be measured; a three-dimensional data generating step of generating three-dimensional atomic level structure volume data corresponding to the nanomaterial to be measured based on the one or more three-dimensional atomic model; a tilt series generating step of generating a tilt series by simulating three-dimensional tomography for a plurality of different angles in a predetermined angle range for at least some of the three-dimensional atomic level structure volume data; and a three-dimensional atomic structure tomogram volume data generating step of generating a three-dimensional atomic structure tomogram volume data set by performing three-dimensional reconstruction on at least some of the three-dimensional atomic level structure volume data based on the tilt series.

The present disclosure relates to a method for estimating heights of defects in a wafer. The method comprises creating an un-calibrated 3D model of a defect in a wafer, determining one or more attributes associated with the un-calibrated 3D model, transforming the un-calibrated 3D model to a calibrated 3D model, and estimating a height of the defect using the calibrated 3D model. Creating an un-calibrated 3D model corresponds to a defect present in a wafer based on a plurality of Scanning Electron Microscope (SEM) images of the defect. Transforming the un-calibrated 3D model to a calibrated 3D model uses a scaling factor corresponding to the determined one or more attributes associated with the un-calibrated 3D model. A height of the defect is estimated based on the calibrated 3D model of the defect.

A cathodoluminescence microscope and method are used to identify and classify dislocations within a semiconductor sample. At least two CL polarized images are concurrently obtained from the sample. The images are added together to obtain a total intensity image. A normalized difference of the images is taken to obtain a degree of polarization (DOP) image. The total intensity and DOP images are compared to differentiate between edge dislocations and screw dislocations within the sample. Edge dislocation density and screw dislocation density may then be calculated.

A method of defining at least one scan parameter for an x-ray scan of a single crystal structure, the method comprising: determining a target orientation of the structure for the scan; and defining different non-zero levels of x-ray exposure for different parts of a scan area based on either or both of the target orientation and characteristics of the structure; and, defining the scan area so that substantially all x-rays of the scan are directed to the structure in the target orientation.

An x-ray imaging/inspection system includes an x-ray source having a plurality of sub-sources in thermal communication with a substrate. The system further includes a first grating positioned to receive at least some of the x-rays from the x-ray source, a stage configured to hold a sample positioned to receive at least some of the x-rays from the x-ray source, at least one x-ray detector, and a second grating having periodic structures. The x-ray source, the first grating, and the second grating are configured such that a ratio of a pitch p.sub.0 of the plurality of sub-sources to a pitch p.sub.2 of the periodic structures of the second grating is substantially equal to a ratio of a distance d.sub.S-G1 between the plurality of sub-sources and the first grating and a distance d.sub.G1-G2 between the first grating and the second grating: (p.sub.0/p.sub.2)=(d.sub.S-G1/d.sub.G1-G2).

A cathodoluminescence microscope and method are used to identify and classify dislocations within a semiconductor sample. At least two CL polarized images are concurrently obtained from the sample. The images are added together to obtain a total intensity image. A normalized difference of the images is taken to obtain a degree of polarization (DOP) image. The total intensity and DOP images are compared to differentiate between edge dislocations and screw dislocations within the sample. Edge dislocation density and screw dislocation density may then be calculated.