A method of evaluating a thickness of a film on a substrate includes detecting atomic force responses of the film to exposure of electromagnetic radiation in the infrared portion of the electromagnetic spectrum. The use of atomic force microscopy to evaluate thicknesses of thin films avoids underlayer noise commonly encountered when optical metrology techniques are utilized to evaluate film thicknesses. Such underlayer noise adversely impacts the accuracy of the thickness evaluation.

The present document relates to a heterodyne scanning probe microscopy (SPM) method for subsurface imaging, and includes: applying, using a transducer, an acoustic input signal to the sample, wherein the acoustic input signal has a frequency of at least 1 gigahertz; sensing an acoustic output signal using a probe, the probe including a cantilever and a probe tip, wherein the probe tip is in contact with the surface, wherein the acoustic output signal is representative of acoustic waves responsive to the acoustic input signal that are measurable at the surface; wherein the acoustic input signal is applied to the sample comprising a distinct pulse of acoustic energy followed by a relaxation period, wherein an acoustic power of the acoustic input signal during the pulse is at least twice as large as an acoustic power during the relaxation period. The present document further relates to a scanning probe microscopy method.

Apparatus and methods for measuring surface topography are described. The analysis apparatus and methods detect light reflected from the reflective backside of a cantilever assembly including a tip, calculate a background level (BGL) value obtained from an optical scan of a reference sample using a power spectral density (PSD) value obtained from a topographical scan of a reference sample to generate a correlational coefficient between the BGL and the PSD values. The correlational coefficient between the BGL and PSD values is used to measure the BGL value of additional EUV mask blanks by a topographical scan of the EUV mask blanks using the same tip mounted to the cantilever.

The present invention relates to a method for measuring the dielectric properties of a sample with a scanning probe microscope. In particular, the invention relates to highly-localized optical imaging and spectroscopy on a sample surface using an atomic force microscope (AFM) probe mechanically driven at two oscillation frequencies, referred to herein as “active bimodal operation”, and a modulated source of electromagnetic radiation.

The present invention relates to a method for measuring the dielectric properties of a sample with a scanning probe microscope. In particular, the invention relates to highly-localized optical imaging and spectroscopy on a sample surface using an atomic force microscope (AFM) probe mechanically driven at two oscillation frequencies, referred to herein as “active bimodal operation”, and a modulated source of electromagnetic radiation.

Methods and systems for subsurface imaging of nanostructures buried inside a plate shaped substrate are provided. An ultrasonic generator at a side face of the substrate is used to couple ultrasound waves (W) into an interior of the substrate. The interior has or forms a waveguide for propagating the ultrasound waves (W) in a direction (X) along a length of the substrate transverse to the side face. The nanostructures are imaged using an AFM tip to measure an effect (E) at the top surface caused by direct or indirect interaction of the ultrasound waves (W) with the buried nanostructures.

A method of evaluating a thickness of a film on a substrate includes detecting atomic force responses of the film to exposure of electromagnetic radiation in the infrared portion of the electromagnetic spectrum. The use of atomic force microscopy to evaluate thicknesses of thin films avoids underlayer noise commonly encountered when optical metrology techniques are utilized to evaluate film thicknesses. Such underlayer noise adversely impacts the accuracy of the thickness evaluation.

System and Methods may be provided for performing chemical spectroscopy on samples from the scale of nanometers with surface sensitivity even on very thick sample. In the method, a signal indicative of infrared absorption of the surface layer is constructed by illuminating the surface layer with a beam of infrared radiation and measuring a probe response comprising at least one of a resonance frequency shift and a phase shift of a resonance of a probe in response to infrared radiation absorbed by the surface layer.

System and Methods may be provided for performing chemical spectroscopy on samples from the scale of nanometers with surface sensitivity even on very thick sample. In the method, a signal indicative of infrared absorption of the surface layer is constructed by illuminating the surface layer with a beam of infrared radiation and measuring a probe response comprising at least one of a resonance frequency shift and a phase shift of a resonance of a probe in response to infrared radiation absorbed by the surface layer.

A method comprises using an atomic-force microscope, acquiring a set of images associated with surfaces, and, using a machine-learning algorithm applied to the images, classifying the surfaces. As a particular example, the classification can be done in a way that relies on surface parameters derived from the images rather than using the images directly.