It is possible to make the free length of a contactor uniform even when the contactor is joined to a position that deviates from a joint position in a high-frequency conducting path and make contact with an electrode with stability, which improves measurement quality. A probe unit according to the present disclosure includes: a coaxial connector that is attached to a main body and gives and receives an electrical signal to and from a tester via a coaxial cable; a high-frequency conducting path that is connected to the coaxial connector and transmits an electrical signal; a plurality of contactors, each having a tip portion that makes electrical contact with an electrode of an object to be inspected and giving and receiving an electrical signal to and from the high-frequency conducting path; and a pedestal that is interposed between the contactor and the high-frequency conducting path, and the pedestal is provided in each contactor such that a free length of the contactor is a predetermined length.

The present disclosure provides an apparatus for illumination inspection of micro LEDs. An apparatus for illumination inspection of micro LEDs includes a surface-contact probe making a surface contact, through an electrical resistive material, with a front surface of an LED assembly of multiple micro LEDs arranged forwardly and interconnecting LED electrodes at both ends of the micro LEDs, probe electrodes to be in line contact with one side and the other side of the surface-contact probe for supplying electric power, an imaging unit for photographing the LED assembly from an opposite surface of the surface-contact probe, to where the surface-contact probe is contacted, and a control unit for supplying electric power to the probe electrodes forwardly along the micro LEDs as aligned and for inspecting the micro LEDs illumination based on images of the LED assembly photographed by the imaging unit before and after supplying the electric power.

A contact element system has a plurality of pin-type or needle-type and electrically conductive contact elements of equal length, which each have two end regions for electrically contacting contact positions and each have an intermediate region under longitudinal loading, overcoming their bending rigidity, and are designed with lamellar sections in the intermediate region such that they have at least two strips which are substantially parallel to each other and run at a distance from one another. At least two of the contact elements have different cross sectional surfaces and differently formed strips in the intermediate region, wherein the forms of the strips are chosen such that the contact elements have the same or approximately the same bending rigidity.

An apparatus for testing a semiconductor device is described. The apparatus includes a test chamber in which a test process for a plurality of semiconductor devices is performed, a first storage disposed in the test chamber with a first semiconductor device located therein, a second storage spaced apart in a first direction from the first storage with a second semiconductor device located therein, a first nozzle extending in the first direction on a first sides of the first and second storages and including a plurality of first air outlets configured to discharge air, a second nozzle extending in the first direction on and including a plurality of second air outlets configured to discharge air, and a controller controlling temperatures of the first and second semiconductor devices within a predefined temperature range by controlling the air discharged by the first and second nozzles.

An integrated circuit (IC) includes semiconductor substrate with a metal stack including a lower, upper and a top metal layer that includes bond pads and a detection bond pad (DBP). A wirebond damage detector (WDD) includes the DBP over a first and second connected structure. The first and second connected structures both include spaced apart top segments of the upper metal layer coupled to spaced apart bottom segments of the lower metal layer. The DBP is coupled to one end of the first connected structure, and ≥1 metal trace is coupled to another end extending beyond the DBP to a first test pad. The second connected structure includes metal traces coupled to respective ends each extending beyond the DBP to a second test pad and to a third test pad.

An integrated circuit (IC) includes semiconductor substrate with a metal stack including a lower, upper and a top metal layer that includes bond pads and a detection bond pad (DBP). A wirebond damage detector (WDD) includes the DBP over a first and second connected structure. The first and second connected structures both include spaced apart top segments of the upper metal layer coupled to spaced apart bottom segments of the lower metal layer. The DBP is coupled to one end of the first connected structure, and ≥1 metal trace is coupled to another end extending beyond the DBP to a first test pad. The second connected structure includes metal traces coupled to respective ends each extending beyond the DBP to a second test pad and to a third test pad.

Methods of characterizing electrical properties of a semiconductor layer structure on a wafer with topside semiconductor layers on an insulating or semi-insulating substrate, the semiconductor layer structure including a high electron mobility transistor (HEMT) heterostructure with a two-dimensional electron gas (2DEG) at a heterointerface between the semiconductor layers of the heterostructure. The methods include: (a) physically contacting the topside of the wafer within a narrow border zone at an edge of the wafer with a flexible metal cantilever electrode of a contacting device, wherein the flexible metal cantilever electrode contacts one or more of the semiconductor layers exposed at the narrow border zone so that the flexible metal cantilever electrode is in electrical contact with the 2DEG; and (b) applying corona charge bias and measuring a surface voltage of the semiconductor layers using a non-contact probe while maintaining the electrical contact with the 2DEG. The physical contacting to the topside of the wafer is noncontaminating and noninvasive to the semiconductor layers.

Proposed is a wafer inspection apparatus and a wafer inspection method, which can increase inspection accuracy while reducing the amount of dry air used. The wafer inspection apparatus includes a chamber providing a space for an electrical test of a wafer, a support unit positioned inside the chamber to support the wafer, a temperature control unit for controlling a test temperature of the wafer, a dry air supply unit for supplying dry air to the chamber, and a flow control unit for controlling the dry air supply unit to adjust flow rate of the dry air based on the test temperature. The wafer inspection apparatus and the wafer inspection method of the present disclosure may increase the accuracy of the wafer inspection while preventing the drying air from being wasted by variably adjusting the flow rate of dry air supplied based on the test temperature of the wafer.

A probe adapter includes an adapter body including a probe aperture and a slot. The probe adapter further includes a driver slidably mounted within the slot and slidable between a first position and a second position. The driver includes a first end and a second end opposite the first end. The first end includes a ramped recess extending in a direction from the first end toward the second end. The probe adapter further includes a threaded fastener configured to contact the second end of the driver so as to retain the driver in the first position.

A probe card device and a self-aligned probe are provided. The self-aligned probe includes a fixing end portion configured to be abutted against a space transformer, a testing end portion configured to detachably abut against a device under test (DUT), a first connection portion connected to the fixing end portion, a second connection portion connected to the testing end portion, and an arced portion that connects the first connection portion and the second connection portion. The fixing end portion and the testing end portion jointly define a reference line passing there-through. The first connection portion has an aligned protrusion, and a maximum distance between the arced portion and the reference line is greater than 75 μm and is less than 150 μm.