The present invention relates to a current-sensor structure comprising a conductor for conducting electrical current in a current direction. The conductor has one or more conductor surfaces. At least one current sensor is disposed on, over, adjacent to or in contact with the conductor and is offset from a centre of the conductor in an offset direction orthogonal to the current direction and optionally parallel to a conductor surface. The current-sensor structure can comprise a substrate on which the conductor is disposed. The current sensor can be located on a side of the conductor opposite or orthogonal to a surface of the substrate. The current sensor can be aligned with, near to or adjacent to an edge of the conductor. The current-sensor structure can comprise a shield, such as a U-shaped laminated shield that at least partially surrounds the conductor and the current sensor.

A current-sensor structure comprises a conductor for conducting electrical current in a current direction. The conductor has one or more conductor surfaces and an edge. At least one current sensor is disposed on, over, adjacent to or in contact with the conductor and is offset from a centre of the conductor in an offset direction orthogonal to the current direction. The current sensor is aligned with the edge of the conductor or the conductor has a width W and the current sensor is within a distance of W/2.5, W/3, W/4, W/5 or W/6 of the conductor edge. The current-sensor structure can comprise a substrate on which the conductor is disposed.

A magnetic probe-based current measurement device and measurement method is disclosed. The device comprises a conductor for a current under test, a magnetic probe, a magnetic bias structure, and a programmable chip. A conductor has a first axis, a second axis, and a third axis. The conductor is provided with through holes. The direction of the through holes are parallel to the third axis. Vertical projections of the through holes on a first cross section are symmetric about the first axis. At least one of the through holes has a center position located on the first axis. And/or every pair of the through holes have center positions that are symmetric about the first axis. The magnetic probe is provided within the through holes, and is electrically connected to the programmable chip. A sensitive center position of the magnetic probe is located on the first cross section. A vertical projection of the magnetic probe on the first cross section is symmetric about the first axis. The magnetic bias structure is provided within the through holes. A magnetization direction of the magnetic bias structure is perpendicular to a sensitive direction of the magnetic probe. The device is small size and has the advantages of high measurement accuracy, and high adaptability

A magnetic sensor includes a magnetic sensor chip that includes a magnetoresistive effect element and a sealed part. The magnetoresistive effect element includes a free layer and a pinned layer. The sealed part has a first surface and a second surface, which is opposite the first surface. The shape of the sealed part in the plan view from the first surface side is substantially quadrilateral. The substantially quadrilateral shape has a first side and a second side, which are substantially parallel to each other. In the plan view, from the first surface side of the sealed part, the magnetization direction of the pinned layer, in a state in which the external magnetic field is not applied on the magnetoresistive effect element, is inclined with respect to an approximately straight line found through the least squares method using a plurality of points arbitrarily set on the first side.

This sensor unit includes a base having a substantially-rectangular planar shape including a first side and a second side that are substantially orthogonal to each other, and a plurality of first sensors provided on the base and arranged on a first axis. The first axis is substantially parallel to the first side and passes through a center position of the base.

The present disclosure provides a magnetic field sensor system, comprising an AMR magnetic field sensor and an overcurrent detection sensor. The overcurrent detection sensor comprises an AMR sensing element connected in a half bride arrangement with a field insensitive component. The output of the overcurrent detection sensor is able to monitor the strength of the magnetic field experiences by the sensor system, and detect if the magnet field goes beyond a sensing threshold of the AMR magnetic field sensor. Outside of this threshold, the AMR magnet field sensor is unable to provide a measurement of the magnetic field strength. The overcurrent detection sensor can therefore detect that the system is operating in very high magnetic fields, which in turn can indicate that there is overcurrent in the system.

A sensor includes: a reference magnetic field generator configured to generate a reference magnetic field that is modulated at a first frequency, a first magnetic field sensing element that is configured to generate a first internal signal that is modulated at a second frequency, and a second magnetic field sensing element that is configured to generate a second internal signal that is modulated at the second frequency. A first amplifier is configured to receive the first internal signal and output a first amplified signal; and a second amplifier is configured to receive the second internal signal and output a second amplified signal. A gain adjustment circuit is configured to produce a gain adjustment signal and adjust a gain of at least one of the first amplifier and the second amplifier based on the gain adjustment signal.

A magnetic sensor includes a magnetoresistive element having a sensitivity axis in a Y direction, a magnetic shield disposed apart in a Z direction from the magnetoresistive element and configured to attenuate the intensity of a magnetic field to be measured, and a magnetic balance coil. The magnetic shield includes a first shield part longitudinally extending in the X direction and second shield parts provided on either side of the first shield part. The first shield part has a portion that overlaps the magnetoresistive element when viewed in the Z direction. Each second shield part has a portion that overlaps the magnetoresistive element when viewed in the X direction. A magnetic path for a magnetic field in the X direction can be formed from one of the second shield parts to the other one of the second shield parts via the first shield part.

The present disclosure provides a magnetic field sensor system, comprising an AMR magnetic field sensor and an overcurrent detection sensor. The overcurrent detection sensor comprises an AMR sensing element connected in a half bride arrangement with a field insensitive component. The output of the overcurrent detection sensor is able to monitor the strength of the magnetic field experiences by the sensor system, and detect if the magnet field goes beyond a sensing threshold of the AMR magnetic field sensor. Outside of this threshold, the AMR magnet field sensor is unable to provide a measurement of the magnetic field strength. The overcurrent detection sensor can therefore detect that the system is operating in very high magnetic fields, which in turn can indicate that there is overcurrent in the system.

A multiphase current measuring apparatus and method for measuring current of a multiconductor current system with N current conductors, where N>2, by determining a magnetic field strength difference in a measurement plane between conductor currents of adjacent current conductors by using the multiphase current measuring apparatus having N−1 magnetoresistive gradient sensors. At least one bypass conductor of at least one of the further current conductors is arranged with respect to each magnetoresistive gradient sensor for compensating a DC field component of the two adjacent current conductors. The DC component of the conductor currents of the two adjacent current conductors is suppressed by passing a bypass current of the at least one further current conductor through the bypass conductor symmetrically through the measurement plane of the magnetoresistive gradient sensor.