A magnetic sensor system includes two magnetic sensors that detect components in two directions of an external magnetic field, an additional magnetic field generation section, and a signal processing circuit. The additional magnetic field generation section is capable of generating two additional magnetic fields for use in measuring the sensitivities of the two magnetic sensors. The signal processing circuit includes a sensitivity measurement processing section and a detection signal correction processing section. The sensitivity measurement processing section measures the sensitivities based on data concerning changes in the detection signals of the two magnetic sensors when the additional magnetic field generation section is controlled to generate two additional magnetic fields. The detection signal correction processing section performs processing for reducing change components attributable to the two additional magnetic fields on the detection signals of the two magnetic sensors.

Devices, methods, and systems for sensing current are described herein. One device includes a first electrode, a second electrode, and a tunneling magnetoresistance material between the first and second electrodes.

Magnetic field sensor for sensing a two-dimensional external magnetic field, including a magnetic tunnel junction including a reference layer having a fixed reference magnetization, a sense ferromagnetic layer having a sense magnetization, and a tunnel barrier layer between the sense and reference ferromagnetic layers; the sense ferromagnetic layer including a first sense ferromagnetic layer in contact with the tunnel barrier layer, a second sense ferromagnetic layer, and a first non-magnetic layer between the first and second sense ferromagnetic layers; the second sense ferromagnetic layer includes a plurality of multilayer element, each multilayer element including a second non-magnetic layer between two second ferromagnetic sense layers; and wherein the second sense ferromagnetic layer has a thickness equal or less than 12 nm.

A magnetic field detection apparatus includes a magnetoresistive effect element and a conductor. The magnetoresistive effect element includes a magnetoresistive effect film extending in a first axis direction and including a first end part, a second end part, and an intermediate part between the first and second end parts. The conductor includes a first part and a second part that each extend in a second axis direction inclined with respect to the first axis direction. The conductor is configured to be supplied with a current and thereby configured to generate an induction magnetic field to be applied to the magnetoresistive effect film in a third axis direction orthogonal to the second axis direction. The first part and the second part respectively overlap the first end part and the second end part in a fourth axis direction orthogonal to both of the second axis direction and the third axis direction.

Magnetic current sensor, including: a sensor bridge circuit including a first and second half-bridges, each including two series-connected and diagonally opposed tunnel magnetoresistive (TMR) sensor elements, the TMR sensor elements including a reference layer oriented a single predetermined direction and a sense layer having a sense magnetization; a field line configured for passing a field current generating a magnetic field adapted for orienting the sense magnetization of the diagonally opposed TMR sensor elements of the first half-bridge and of the diagonally opposed TMR sensor elements of the second half-bridge in an opposite direction; such that a non-null differential voltage output between the TMR sensor elements of the first half-bridge and the TMR sensor elements of the second half-bridge is measurable when the field current is passed in the field line; the differential voltage output being insensitive to the presence of an external uniform magnetic field.

A current sensor includes a primary conductor in which a current to be measured flows, at least one magnetic sensor that detects a strength of a magnetic field produced by the current flowing in the primary conductor, and a magnetic body that surrounds a periphery of the primary conductor and the magnetic sensor. Output characteristics of the magnetic sensor include a low-output region in which a measured voltage value lower than a virtual output voltage proportional to a value of the current is outputted. Magnetization characteristics of the magnetic body include a magnetic saturation region in which permeability decreases in ranges where an absolute value of the current is no less than a threshold. An output of the magnetic sensor is corrected such that the measured voltage value increases as a result of a magnetic field leaking from the magnetic body that is within the magnetic saturation region acting on the magnetic sensor that is in the low-output region.

In a current detection device, a first shield plate is disposed adjacent to a magnetic sensor and a second shield plate is disposed adjacent to the bus bar so that the first and second shield plates sandwich the bus bar and the magnetic sensor in the thickness direction of the bus bar. A plurality of the first shield plates adjacent to the magnetic sensors are an integral part of a cover. At least part of the cover is separated between adjacent two of the first shield plates, and a plurality of the second shield plates disposed adjacent to the bus bars are an integral part of a casing.

A magnetic sensor includes a substrate, and a magneto-resistive element portion which is provided on the substrate and has a predetermined magneto-sensitive direction, and in which a bias magnetic field is applied in a direction orthogonal or substantially orthogonal to the magneto-sensitive direction. The magneto-resistive element portion includes a magnetic layer having a negative magneto-striction constant, and stress-induced anisotropy of the magnetic layer develops in a direction parallel or substantially parallel to the direction of the bias magnetic field in response to a tensile stress act on the substrate in a direction parallel or substantially parallel to the magneto-sensitive direction.

A magnetic field sensor includes a plurality of magnetoresistance elements, each having at least one characteristic selected to provide a respective, different response to an applied magnetic field, wherein each of the plurality of magnetoresistance elements is coupled in parallel. Illustrative characteristics selected to provide the respective responses include dimensions and/or construction parameters such as materials, layer thickness and order, and spatial relationship of the magnetoresistance element to the applied magnetic field. A method includes providing each of a plurality of magnetoresistance elements with at least one characteristic selected to provide a respective, different response to an applied magnetic field, wherein each of the plurality of magnetoresistance elements is coupled in parallel.

A current sensor includes a wiring board, a shield, an insulating sensor housing, and a shield adhesive. The wiring board and the shield are accommodated in the sensor housing. The sensor housing has a shield support part to support the shield, and a shield adhesion part. An application surface of the shield adhesion part is further from the shield than a contact surface of the shield support part. The shield is mounted on the contact surface of the shield support part, and the shield adhesive is disposed between the application surface of the shield adhesion part and the shield. The shield and the wiring board are aligned with and spaced from each other in the sensor housing.