A sensor includes: a reference magnetic field generator configured to generate a reference magnetic field that is modulated at a first frequency, a first magnetic field sensing element that is configured to generate a first internal signal that is modulated at a second frequency, and a second magnetic field sensing element that is configured to generate a second internal signal that is modulated at the second frequency. A first amplifier is configured to receive the first internal signal and output a first amplified signal; and a second amplifier is configured to receive the second internal signal and output a second amplified signal. A gain adjustment circuit is configured to produce a gain adjustment signal and adjust a gain of at least one of the first amplifier and the second amplifier based on the gain adjustment signal.

A sensor package including a metal carrier and a sensor chip arranged on the metal carrier and having a first sensor element. In an orthogonal projection of the sensor chip onto a surface of the metal carrier, at least two edge sections of the sensor chip are free of overlap with the surface of the metal carrier. The sensor chip is designed to detect a magnetic field induced by an electric current flowing through a current conductor.

An integrated sensor and method for manufacturing the sensor includes a first component having a first material with a predetermined first value of coefficient of thermal expansion (CTE), and a second component over the first component. The second component includes a second material with a predetermined second value of CTE different from the first value. An interlayer is provided by molecular layer deposition, for minimizing stress caused by coefficient of thermal expansion mismatch between the first and second components. The interlayer includes an organic-inorganic hybrid polymer compound.

A method of manufacture of a sensor and a sensor for sensing a magnetic field generated by a current in a conductive substrate includes a first substrate having a sensing element for sensing magnetic field, and a second substrate is the conductive substrate. A conformal layer is provided by atomic layer deposition between the first substrate and the second substrate, thus protecting at least the sensing element from discharge from the second substrate.

The described techniques address issues associated with coreless current sensors by implementing a current sensor solution that may use as few as two, two-dimensional (2D) linear sensors. The discussed techniques provide a coreless current sensor solution that is independent of the sensor position with respect to a current-carrying conductor. An algorithm is also described for auto-calibration of sensor position with respect to a current-carrying conductor to calculate the current flowing through the conductor. The calculation of current may be performed independent of the position of the current-carrying conductor with respect to the sensor, and thus the disclosed techniques provide additional advantages regarding installation flexibility without sacrificing measurement accuracy.

A packaged current sensor integrated circuit includes a primary conductor having an input portion and an output portion configured to carry a current to be measured by one or more magnetic sensing elements supported by a semiconductor die adjacent to the primary conductor. A method of fabricating the packaged current sensor integrated circuit includes partially encasing the lead frame in a first mold material, applying an insulator to one or more die attach pads, attaching a die to the insulator, electrically connecting the die to secondary leads, and providing a second mold to the subassembly. The package is configured to provide increased voltage isolation.

A current sensor includes a magnetic sensor configured to detect a magnetic field generated by a current to be measured flowing through a current path and a shielding member including a first shield, a second shield, and a third shield disposed away from each other. The first shield is disposed on an opposite side of the current path from the magnetic sensor in a first direction in which the magnetic sensor and the current path oppose each other and includes a first opposing surface opposing the current path. The second shield includes a second opposing surface along the first direction. The third shield includes a third opposing surface along the first direction. The second shield and the third shield are disposed such that the second opposing surface and the third opposing surface oppose each other, with the magnetic sensor and the current path sandwiched therebetween.

A multiphase current measuring apparatus and method for measuring current of a multiconductor current system with N current conductors, where N>2, by determining a magnetic field strength difference in a measurement plane between conductor currents of adjacent current conductors by using the multiphase current measuring apparatus having N−1 magnetoresistive gradient sensors. At least one bypass conductor of at least one of the further current conductors is arranged with respect to each magnetoresistive gradient sensor for compensating a DC field component of the two adjacent current conductors. The DC component of the conductor currents of the two adjacent current conductors is suppressed by passing a bypass current of the at least one further current conductor through the bypass conductor symmetrically through the measurement plane of the magnetoresistive gradient sensor.

A current sensor integrated circuit configured to sense a current through a current conductor includes a lead frame at least one signal lead, a fan out wafer level package (FOWLP), and a mold material enclosing the FOWLP and a portion of the lead frame. The FOWLP includes a semiconductor die configured to support at least one magnetic field sensing element to sense a magnetic field associated with the current, wherein the semiconductor die has a first surface on which at least one connection pad is accessible, a redistribution layer in contact with the at least one connection pad, and an insulating layer in contact with the redistribution layer, wherein the insulating layer is configured to extend beyond a periphery of the semiconductor die by a minimum distance. The die connection pad is configured to be electrically coupled to the at least one signal lead.

Provided is a current detection device including a first stacked board; a second stacked board provided on a first region on the first stacked board; a third stacked board provided on a second region on the first stacked board; a magnetic measurement element provided in a third region on the first stacked board, the magnetic element provided between the first region and the second region; and a first coil provided on the magnetic measurement element or below the magnetic measurement element.