Embodiments of the invention determine intrinsic parameters of stacked nanowires/nanosheets GAA MOSFETs comprising N.sub.w nanowires and/or nanosheets, each nanowire/nanosheet being surrounded in an oxide layer, the oxide layers being embedded in a common gate, wherein the method comprises the following steps: measuring the following parameters of the MOSFET: number of stacked nanowires/nanosheets N.sub.w, width W.sub.w,i, of the nanowire/nanosheet number i, i being an integer from 1 to N.sub.w, thickness of the nanowire/nanosheet H.sub.w,i, number i, i being an integer from 1 to N.sub.w, corner radius R.sub.w,i of the nanowire/nanosheet number i, i being an integer from 1 to N.sub.w, R.sub.w,i; calculating, using a processor and the measured parameters, a surface potential x normalized by a thermal voltage .sub.T given by .sub.T=k.sub.BT/q; measuring the total gate capacitance for a plurality of gate voltages; determining, using the measured total gate capacitance and the calculated normalized surface potential, the intrinsic parameter of the stacked nanowires/nanosheets MOSFET.

The temperature calibration characteristic curve of a semiconductor component can be readily determined by interconnecting the power connections of the semiconductor component with a first current source for a load current, a second current source for a measurement current and a voltmeter for measuring the voltage drop across the power connections. Furthermore, the semiconductor component is connected to a data processing system and heated by the dissipated power at time intervals when the first current source is connected, and the voltage drop across the power or auxiliary connections is measured when the first current source disconnected and the second current source is connected between the intervals after a time duration determined by the thermal main time constant of the semiconductor component. The temperature of the semiconductor component is separately measured and the temperature calibration characteristic curve is obtained by correlating the measured temperature with the voltage drop.

A measuring method and device based on the second harmonic for the whole area measurement of a wafer comprises three modes: a fixed-point measurement, a scanning measurement, and a combination of the fixed-point measurement and the scanning measurement. The scanning measurement solution measures the entire wafer under the premise of ensuring high measurement efficiency, obtain the position, size and relative density distribution of electrical defects, and achieve locating and checking of abnormal points on the wafer. A new formula system is provided for describing the second harmonic signal, so that the actual measurement results and the theoretical model are unified under the three modes of the fixed-point measurement, the scanning measurement, and the combination of fixed-point measurement and scanning measurement, so that the second harmonic metrology technology is no longer only a qualitative analysis method, but also a quantitative analysis method.

Systems, components, computer-implemented methods, and algorithms for generating waveform data are described. A method for generating waveform data can include directing a pulsed beam of charged particles toward a sample. The sample can include a conductive feature to which a transient electrical signal is applied. The pulsed beam of charged particles can be characterized by a pulse period measured in units of time. The method can include generating detector data over a period of time corresponding to a multiple of the pulse period. The detector data can be generated based at least in part on interactions between the charged particles and the sample. The method can also include generating waveform data describing the transient electrical signal using the detector data.

Embodiments of the invention come up from a guide and support member within a device for testing electronic components, which guide and support member can be moved into a feeding position and into a testing position, the guide and support member with a base body for accommodating an electronic component to be tested, with at least one support for supporting contact springs of the electronic component to be tested, and with at least one stopper that stops the movement of the electronic component to be tested at one of its contact springs once the electronic component to be tested is in an exact position. According to the invention, the at least one support comprises a ceramic material, wherein the stopper is anchored in the base body.

A computer processor implemented method of developing irradiance mapping using a distributed network of solar photovoltaic systems, the method comprising the steps of: selecting a predetermined geographic area having at least five solar photovoltaic systems to provide a photovoltaic system; calibrating the photovoltaic system; reversing the photovoltaic system performance model using a computer processor to solve the irradiance input value; calculating irradiance according to irradiance input value, energy output and weather data using the computer processor to provide a single irradiance point; and mapping at least two single irradiance points to create an irradiance map.

A wedge amplitude-modulation probe card and a main body thereof. The probe card includes a probe card main body, upper wedge plates and lower wedge plates. Several upper wedge plates and several lower wedge plates are slidably arranged inside the probe card main body, and the several upper wedge plates and the several lower wedge plates are sequentially arranged at intervals in a staggered manner, so that by means of inserting different numbers of upper wedge plates between the lower wedge plates, probes on the upper wedge plates can be inserted into or shifted out of a probe queue thereunder, so as to increase or decrease the number of probes for testing, and thus, the testing amplitude of a single probe card can be adjusted, such that the probe card has universality.

A testing apparatus, including: a variable resistor coupled to a control electrode of a switching device; a storage circuit storing information indicating a relation between a resistance value of the variable resistor and a voltage change rate at which a voltage between power-source-side and ground-side electrodes of the switching device changes when the switching device is turned off; and a control circuit controlling the variable resistor. The control circuit sets the variable resistor to have a first resistance value and obtains a first value of the voltage change rate, sets the variable resistor to have a second resistance value based on the first value of the voltage change rate and the information, obtains a second value of the voltage change rate when the variable resistor is of the second resistance value, and determines whether the second value of the voltage change rate meets a specification of the switching device.

A method analyzes an operation of a power semiconductor device. The method includes: providing a set of reference voltages of the device and a set of corresponding reference currents; measuring, within a predetermined time-interval, Nframe on-state voltages and Nframe corresponding on-state currents of the device to obtain Nframe measurement points, Nframe being an integer number equal to or greater than 2; adapting the set of reference voltages by carrying out a least squares fit to the Nframe measurement points; and using the adapted set of reference voltages to analyze the operation of the power semiconductor device.

A test and measurement system has one or more inputs connectable to a device under test (DUT), and one or more processors configured to execute code that causes the one or more processors to: gather a set of training waveforms by acquiring one or more waveforms from one or more DUTs or from simulated waveforms, remove noise from the set of training waveforms to produce a set of noiseless training waveforms, and use the set of noiseless training waveforms as a training set to train a neural network to predict a measurement value for a DUT, producing a trained neural network. A method of training a neural network having receiving one or more waveforms from one or more DUTs, or generating one or more waveforms from a waveform simulator, removing noise from a set of training waveforms gathered from the one or more waveforms to produce a set of noiseless training waveforms, and use the set of noiseless training waveforms as a training set to train a neural network to predict a measurement value for a DUT, producing a trained neural network.