A multi-die health monitoring device: sets, at a given current provided to the load by the group of dies, one of the dies in a non-conducting state (NCS), obtains, when the die is in the NCS, a signal that is representative of the temperature of the die and determines the temperature of the die, obtains, when the die is in the NCS, a signal that is representative of an on-state voltage (OSV) of the die and determines the OSV of the die, retrieves in a table stored in a memory of the multi-die health monitoring device, an OSV that corresponds to the given current and the determined temperature of the die, notifies that the multi-die power module has to be replaced, if the difference between the determined OSV of the die and the retrieved OSV is equal or upper than a predetermined value.

An electronic device includes an interface configured to receive telemetry information for one or more power semiconductor devices and a data acquisition and processing unit. The data acquisition and processing unit may be configured to increase a gate voltage above a maximum permitted level for each of the one or more power semiconductor devices having a current slew rate that exceeds a predetermined level as determined by the telemetry information. The data acquisition and processing unit may be configured to increase a gate voltage above a maximum permitted level for each of the one or more power semiconductor devices having a temperature that exceeds a predetermined level as determined by the telemetry information. An electronic system that includes the electronic device is also described.

An optically-monitored and/or optically-controlled electronic device is described. The device includes at least one of a semiconductor transistor or a semiconductor diode. An optical detector is configured to detect light emitted by the at least one of the semiconductor transistor or the semiconductor diode during operation. A signal processor is configured to communicate with the optical detector to receive information regarding the light detected. The signal processor is further configured to provide information concerning at least one of an electrical current flowing in, a temperature of, or a condition of the at least one of the semiconductor transistor or the semiconductor diode during operation.

A reliability evaluation method and system for a microgrid inverter IGBT based on segmented long short-term memory (LSTM) is disclosed, including steps as follows. An electrothermal coupling model is constructed to obtain real-time junction temperature data. The original LSTM algorithm is improved to obtain a segmented LSTM prediction network for the aging characteristics of the IGBT. The monitoring value of the IGBT aging parameter is used to perform segmented LSTM prediction to obtain the predicted aging process, and the threshold values of different aging stages are categorized. An aging correction is performed on the aging parameter of the electrothermal coupling model to ensure the accuracy of the junction temperature data. Rainflow-counting algorithm is used to calculate real-time thermal stress load distribution of the IGBT. The fatigue damage theory and the Lesit life prediction model are combined to calculate the real-time cumulative damage and predicted life of the IGBT.

Systems, circuits, and chips for protecting transistors and circuits containing transistors are provided. As an example, a transistor (e.g., an Insulated-Gate Bipolar Transistor (IGBT)) monitoring system is disclosed to include an IGBT desaturation detection circuit that is configured to check and monitor desaturation functionality of the IGBT before startup of the IGBT as well as during operation of the IGBT.

A method and system for predicting an insulated gate bipolar transistor (IGBT) lifetime based on compound failure mode coupling are provided. First, a simultaneous failure probability model of a bonding wire and a solder layer is calculated. Next, expectancy of the simultaneous failure probability model is calculated and recorded as a lifetime under a coupling effect. A coupling function relation is established. A lifetime of the solder layer and a lifetime of the bonding wire are predicted. An IGBT lifetime prediction model not taking the coupling effect into account is established. An IGBT lifetime prediction model taking the coupling effect into account is established. In the disclosure, the lifetime of the IGBT module under the coupling effect of the solder layer and the bonding wire may be accurately predicted.

A method for manufacturing a semiconductor device having a trench gate structure is provided. In the method, a first voltage-current characteristic indicating a relation between the main current and the gate voltage under a first temperature is measured to calculate a first threshold voltage. A second voltage-current characteristic indicating a relation between the main current and the gate voltage under a second temperature different from the first temperature is measured to calculate a second threshold voltage. It is determined whether the semiconductor device is a non-defective product or a defective product based on whether a difference between the second threshold voltage and the first threshold voltage is larger than a determination threshold value.

There are provided an electric-current sensing device capable of detecting an electric current with high accuracy, a load driving system, and a method for manufacturing the electric-current sensing device. According to one embodiment, the electric-current sensing device includes a sense IGBT through which an electric current proportional to an electric current flowing through a main IGBT flows. Further, a depth of a P type floating region from a lower end of each of a plurality of trench gates provided in the sense IGBT is shallower than a depth of another P type floating region from a lower end of each of a plurality of trench gates provided in the main IGBT.

A hybrid, fundamental and harmonic frequency, active injection load pull test setup includes a harmonic receiver, impedance tuners and operates using only a single power source at the fundamental frequency Fo whereby the signal is split between input and output signal path. The output signal portion is retrieved through the coupled port of an adjustable wave-probe, which is incorporated into the input tuner and attached on the vertical axis of one of the tuner's mobile carriages. Wideband and harmonic impedance tuners serve for pre-matching the DUT output and reducing the injection power requirement; the amplitude and phase control in the feedback loop uses the variable wave-probe coupler mounted inside the source tuner.

Provided is a technique capable of preventing occurrence of partial discharge. An evaluation apparatus includes a probe disposed on an undersurface of an upper component; a sidewall part disposed on the undersurface of the upper component and enclosing sides of the probe; and a first gas supplying part. The first gas supplying part is capable of supplying a gas to a to-be-measured object that is placed on a stage when the sidewall part comes in proximity to the stage, and to a space enclosed by the stage, the sidewall part, and the upper component when the sidewall part is in contact with the stage.