An optically-monitored and/or optically-controlled electronic device is described. The device includes at least one of a semiconductor transistor or a semiconductor diode. An optical detector is configured to detect light emitted by the at least one of the semiconductor transistor or the semiconductor diode during operation. A signal processor is configured to communicate with the optical detector to receive information regarding the light detected. The signal processor is further configured to provide information concerning at least one of an electrical current flowing in, a temperature of, or a condition of the at least one of the semiconductor transistor or the semiconductor diode during operation.

An object is to provide a semiconductor device capable of accurately detecting a temperature of a transistor part and a temperature of the diode part, and improving an overheat protection function. A semiconductor device includes a semiconductor chip having a cell region made up of a plurality of cells including cells corresponding to a transistor part and a diode part, respectively, a temperature detection part detecting a temperature of the transistor part, and a temperature detection part detecting a temperature of the diode part, the temperature detection part is disposed in the cell corresponding to the transistor part, and the temperature detection part is disposed in the cell corresponding to the diode part.

Embodiments of the invention are directed to using a DC multimeter configured for checking device amperage. A DC voltmeter is electrically-connected in series with the DC multimeter. A linear circuit is electrically connected in series between the DC multimeter and the DC voltmeter. A device under test is electrically-connected between positive and negative terminals of the DC voltmeter.

A diode test module and method applicable to the diode test module are provided. A substrate having first conductivity type and an epitaxial layer having second conductivity type on the substrate are formed. A well region having first conductivity type is formed in the epitaxial layer. A first and second heavily doped region having second conductivity type are theoretically formed in the well and connected to a first and second I/O terminal, respectively. Isolation trench is formed there in between for electrical isolation. A monitor cell comprising a third and fourth heavily doped region is provided in a current conduction path between the first and second I/O terminal when inputting an operation voltage. By employing the monitor cell, the invention achieves to determine if the well region is missing by measuring whether a leakage current is generated without additional testing equipment and time for conventional capacitance measurements.

A method analyzes an operation of a power semiconductor device. The method includes: providing a set of reference voltages of the power semiconductor device and a set of corresponding reference currents; measuring an on-state voltage and a corresponding on-state current of the power semiconductor device to obtain a measurement point; adapting the set of reference voltages by adapting two of the set of reference voltages lying closest to the measurement point by extrapolating the measurement point; and using the adapted set of reference voltages to analyze the operation of the power semiconductor device. The extrapolation is based on a predefined reference increment current and a predefined reference increment voltage.

Disclosed herein is an apparatus that includes a first semiconductor chip, and a first TSV penetrating the first semiconductor chip. The first semiconductor chip includes a first resistor coupled between a first power supply and a first node, a switch circuit coupled between the first node and the first TSV, a pad electrode operatively coupled to the first node, and a constant current source operatively coupled to either one of the first node and the pad electrode.

Methods and apparatus for providing measurements in p-n junctions and taking into account the lateral current for improved accuracy are disclosed. The lateral current may be controlled, allowing the spreading of the current to be reduced or substantially eliminated. Alternatively or additionally, the lateral current may be measured, allowing a more accurate normal current to be calculated by compensating for the measured spreading. In addition, the techniques utilized for controlling the lateral current and the techniques utilized for measuring the lateral current may also be implemented jointly.

A control unit for a motor vehicle, having a supply connection for receiving a supply voltage from a supply line needing to be secured against a reaction from the control unit, wherein to protect against the reaction there is provision in a current path of the supply connection for a unidirectional first blocking element, and a diagnostic circuit is configured to check the blocking effect thereof by a predetermined diagnostic routine. An additional, second unidirectional blocking element is connected in series with the blocking element in the current path of the supply connection, wherein the first and the second blocking element each provide for a unidirectional flow of current to the device circuit, and the diagnostic circuit is configured to use the diagnostic routine to also check the blocking effect of the second blocking element.

An exemplary embodiment of the present inventive concept provides a display device including: a display area where an image is displayed; a peripheral area disposed outside the display area; a hole area disposed within the display area; a hole crack detection line disposed adjacent to the hole area to surround the hole area and having a first end and a second end that is separated from the first end; a first detection line extending from the peripheral area and connected to the hole crack detection line to constitute a first closed circuit; a second detection line extending from the peripheral area and connected to the hole crack detection line to constitute a second closed circuit; and a circuit portion connected to the first detection line and the second detection line.

A transient voltage suppressor (TVS) can include an input line, a return line, and a plurality of TVS diodes disposed in series between the input line and the return line. The TVS can include a switch assembly operatively connected to the plurality of TVS diodes and configured to bypass at least one of the plurality of TVS diodes to allow a remainder of the plurality of TVS diodes to be tested at a voltage that is lower than if the switch assembly were not employed.