Provided is a current application device capable of applying a test current of a magnitude necessary for testing of a semiconductor element without any trouble. A current application device 1 is configured to have a contacting section having a plurality of projections 21 for contacting a contact region 24 inside an active region 23 of a semiconductor element 22 and applying the test current thereto, and a pressing section 3 which presses the contacting section 2 against the semiconductor element 22 such that each projection 21 contacts the contact region 24. A plurality of the projections 21 are arranged such that an arrangement density of outside projections 21 is larger than the arrangement density of inside projections 21.

A device for evaluating a dynamic resistance in a conducting state of a GaN-based transistor. The device including a test circuit provided with a circuit, the GaN-based transistor, forming an arm of the circuit, the device being provided with a stage for controlling the switch elements of the circuit to alternately set the switch elements of the circuit in a first configuration and then in a second configuration, the control stage being configured to trigger a connection of a drain-source voltage measuring stage to the GaN-based transistor after the circuit is set in the first configuration, and to trigger a disconnection of the drain-source voltage measuring stage from the GaN-based transistor before the circuit is set in the second configuration.

A bonding quality test circuit includes a switching circuit configured to provide a connection between a sensing node and a bonding node, the bonding node corresponding to a first end of a bonding resistor that is between a line provided to a memory device and a peripheral circuit, a precharging circuit configured to provide a precharge voltage to the line and the sensing node when the precharging circuit is connected to the line and the sensing node by the switching circuit, a latch circuit that includes a first node configured to provide a control output signal to the precharging circuit and a second node configured to have a voltage that is phase inverted with respect to a voltage of the control output signal, and a first transistor configured to provide an output signal according to the sensing node when the first transistor is connected to the second node.