An oxide semiconductor film having high stability with respect to light irradiation or a semiconductor device having high stability with respect to light irradiation is provided. One embodiment of the present invention is a semiconductor film including an oxide in which light absorption is observed by a constant photocurrent method (CPM) in a wavelength range of 400 nm to 800 nm, and in which an absorption coefficient of a defect level, which is obtained by removing light absorption due to a band tail from the light absorption, is lower than or equal to 5×10.sup.−2/cm. Alternatively, a semiconductor device is manufactured using the semiconductor film.

FPAs on a wafer can be tested prior to dicing the wafer into individual dies. A focal plane array (FPA) can comprise an array of photodetectors, such as microbolometers, on a semiconductor substrate or die. FPAs can be manufactured on a wafer to make multiple FPAs on a single wafer that can be later diced or divided into individual FPAs. Prior to dicing the wafer, the FPAs can be tested electrically and radiometrically in bulk to characterize individual FPAs, to identify bad pixels, to identify bad chips, to calibrate individual FPAs, and the like. These test results can be used to determine acceptable FPAs and can be used to provide initial settings for imaging systems with the tested and integrated FPA.

A heat source position inside a measurement object is identified with high accuracy by improving time resolution.

An analysis system according to the present invention is an analysis system that identifies a heat source position inside a measurement object, and includes a condition setting unit that sets a measurement point for one surface of the measurement object, a tester that applies a stimulation signal to the measurement object, a light source that irradiates the measurement point of the measurement object with light, a photo detector that detects light reflected from a predetermined measurement point on the surface of the measurement object according to the irradiation of light and outputs a detection signal, and an analysis unit that derives a distance from the measurement point to the heat source position based on the detection signal and the stimulation signal and identifies the heat source position.

A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set of photodetectors coupled to the optical splitter. The optical splitter is to be coupled to an optical source and configured to transmit a reference optical signal to the first set of photodetectors via the optical DUTs and the second set of photodetectors.

An optical testing circuit on a wafer includes an optical input configured to receive an optical test signal and photodetectors configured to generate corresponding electrical signals in response to optical processing of the optical test signal through the optical testing circuit. The electrical signals are simultaneously sensed by a probe circuit and then processed. In one process, test data from the electrical signals is simultaneously generated at each step of a sweep in wavelength of the optical test signal and output in response to a step change. In another process, the electrical signals are sequentially selected and the sweep in wavelength of the optical test signal is performed for each selected electrical signal to generate the test data.

An inspection system includes a light source, a mirror, Galvano mirrors, a casing that holds the mirror and the Galvano mirrors inside and includes an attachment portion for attaching an optical element, and a control unit that controls a deflection angle of the Galvano mirrors, wherein the control unit controls the deflection angle so that an optical path optically connected to a semiconductor device is switched between a first optical path passing through the Galvano mirrors and the mirror, and a second optical path passing through the Galvano mirrors and the attachment portion, and controls the deflection angle so that the deflection angle when switching to the first optical path has been performed and the deflection angle when switching to the second optical path has been performed do not overlap.

An inspection method includes a step S20 of electrically connecting electrical signal terminals of a semiconductor device to electric connectors, and optically connecting optical signal terminals of the semiconductor device to optical connectors, a step S30 of measuring a test light output signal output from a monitoring element provided in an inspection object in response to a test input signal having been input to the monitoring element while adjusting conditions of a position and an inclination of the inspection object, and extracting conditions in which an optical intensity of the test light output signal is a predetermined determination value or greater as inspection conditions, and a step S40 of inspecting the semiconductor device under the inspection conditions.

An observation apparatus includes a laser light source, a scanning optical system irradiating a semiconductor device with laser light output from the laser light source, a bias power supply applying a reverse bias voltage of a predetermined voltage between electrodes of the semiconductor device, a sensor detecting an electrical property occurring in the semiconductor device in response to the laser light, and a control system generating an electrical property image of the semiconductor device based on a detection signal from the sensor. The bias power supply gradually increases a magnitude of the predetermined voltage until the predetermined voltage reaches a voltage at which avalanche amplification occurs in the semiconductor device. When the predetermined voltage is increased, the scanning optical system irradiates with the laser light, the sensor detects the electrical property, and the control system generates the electrical property image.

A method for testing a lifetime of a surface state carrier of a semiconductor, including the following steps, 1) a narrow pulse light source is used to emit a light pulse, and coupled to an interior of a near-field optical probe, and the near-field optical probe produces a photon-generated carrier on a surface of a semiconductor material under test through excitation. 2) The excited photon-generated carrier is concentrated on the surface of the semiconductor material, and recombination is conducted continuously with a surface state as a recombination center. 3) A change in a lattice constant is produced due to an electronic volume effect, a stress wave is produced, and a signal of the stress wave is detected in a high-frequency broadband ultrasonic testing mode. 4) Fitting calculation is conducted on the signal of the stress wave to obtain the lifetime of the surface state carrier τ.sub.c.

An inspection system includes a light source, a mirror, Galvano mirrors, a casing that holds the mirror and the Galvano mirrors inside and includes an attachment portion for attaching an optical element, and a control unit that controls a deflection angle of the Galvano mirrors, wherein the control unit controls the deflection angle so that an optical path optically connected to a semiconductor device is switched between a first optical path passing through the Galvano mirrors and the mirror, and a second optical path passing through the Galvano mirrors and the attachment portion, and controls the deflection angle so that the deflection angle when switching to the first optical path has been performed and the deflection angle when switching to the second optical path has been performed do not overlap.