An integrated circuit (IC) includes semiconductor substrate with a metal stack including a lower, upper and a top metal layer that includes bond pads and a detection bond pad (DBP). A wirebond damage detector (WDD) includes the DBP over a first and second connected structure. The first and second connected structures both include spaced apart top segments of the upper metal layer coupled to spaced apart bottom segments of the lower metal layer. The DBP is coupled to one end of the first connected structure, and ≥1 metal trace is coupled to another end extending beyond the DBP to a first test pad. The second connected structure includes metal traces coupled to respective ends each extending beyond the DBP to a second test pad and to a third test pad.

A system includes a first integrated circuit including a first interface circuit with a first transmit pin and a first receive pin, and a first test circuit. The system also includes a second integrated circuit including a second interface circuit with a second receive pin coupled to the first transmit pin, and a second transmit pin coupled to the first receive pin. The second integrated circuit further includes a second test circuit configured to route signals from the second receive pin to the second transmit pin, such that the sent test signal is received by the second receive pin, bypasses the second test circuit, and is routed to the second transmit pin. The first test circuit is further configured to receive the routed test signal on the first receive pin via the second conductive path.

Semiconductor devices having through-stack interconnects for facilitating connectivity testing, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a stack of semiconductor dies and a plurality of through-stack interconnects extending through the stack to electrically couple the semiconductor dies. The interconnects include functional interconnects and at least one test interconnect. The test interconnect is positioned in a portion of the stack more prone to connectivity defects than the functional interconnects. Accordingly, testing the connectivity of the test interconnect can provide an indication of the connectivity of the functional interconnects.

Semiconductor devices having through-stack interconnects for facilitating connectivity testing, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a stack of semiconductor dies and a plurality of through-stack interconnects extending through the stack to electrically couple the semiconductor dies. The interconnects include functional interconnects and at least one test interconnect. The test interconnect is positioned in a portion of the stack more prone to connectivity defects than the functional interconnects. Accordingly, testing the connectivity of the test interconnect can provide an indication of the connectivity of the functional interconnects.

An integrated circuit (IC) includes semiconductor substrate with a metal stack including a lower, upper and a top metal layer that includes bond pads and a detection bond pad (DBP). A wirebond damage detector (WDD) includes the DBP over a first and second connected structure. The first and second connected structures both include spaced apart top segments of the upper metal layer coupled to spaced apart bottom segments of the lower metal layer. The DBP is coupled to one end of the first connected structure, and >1 metal trace is coupled to another end extending beyond the DBP to a first test pad. The second connected structure includes metal traces coupled to respective ends each extending beyond the DBP to a second test pad and to a third test pad.

An integrated circuit chip is attached to a support that includes first conductive elements. First conductive pads are located on the integrated circuit chip and are electrically coupled to the first conductive elements by conductive wires. The integrated circuit chip further includes a conductive track. A switch circuit is provided to selectively electrically connect each first conductive pad to the conductive track. To test the conductive wires, a group of first conductive pads are connected by their respective switch circuits to the conductive track and current flow between corresponding first conductive elements is measured.

A semiconductor integrated circuit (IC) comprising a time-to-digital converter (TDC) configured to measure an input-to-output delay of an I/O buffer of a pad the IC, the measured delay reflecting a connection impedance of the pad. A circuit in the IC, or a computer in communication with the IC, determines electrical connection integrity of the pad based on the measured delay of the I/O buffer.

A semiconductor device may include: first to n-th through-electrodes; first to n-th through-electrode driving circuits suitable for charging the first to n-th through-electrodes to a first voltage level, or discharging the first to n-th through-electrodes to a second voltage level; and first to n-th error detection circuits, each suitable for storing the first voltage level or the second voltage level of a corresponding through-electrode of the first to n-th through-electrodes as a down-detection signal and an up-detection signal, and outputting a corresponding error detection signal of first to n-th error detection signals by sequentially masking the down-detection signal and the up-detection signal.

A TSV detecting circuit, TSV detecting methods, and an integrated circuit thereof are disclosed by the present disclosure. The TSV detecting circuit includes a first detecting module includes: a first comparison unit; a first input unit, for transmitting an input signal to a first input of the first comparison unit controlled by a first clock signal; a first switching unit for transmitting a signal of a first node to a second input of the first comparison unit controlled by a first detection control signal, the first node coupled to a first terminal of the TSV; and a second detecting module includes: a second input unit for transmitting the input signal to a second node controlled by a second clock signal; a second switching unit for transmitting a signal of the second node to a second terminal of the TSV controlled a second detection control signal.

Methods and apparatus relating to processor and chipset continuity testing of package interconnect for functional safety applications are described. In an embodiment, voltage divider logic circuitry divides a reference voltage. Controller logic circuitry compares a divided voltage value from a node of the voltage divider logic circuitry and a threshold voltage value. A first end of the voltage divider logic circuitry is coupled to receive the reference voltage and a second end of the voltage divider logic circuitry is coupled to a Non-Critical-To-Function (NCTF) solder ball. The controller logic circuitry generates an error signal in response to a mismatch between the divided voltage value and the threshold voltage value. Other embodiments are also disclosed and claimed.