Systems and methods are provided for producing an integrated circuit package, e.g., an SOIC package, having reduced or eliminated lead delamination caused by epoxy outgassing resulting from the die attach process in which an integrated circuit die is attached to a lead frame by an epoxy. The epoxy outgassing may be reduced by heating the epoxy during or otherwise in association with the die attach process, e.g. using a heating device provided at the die attach unit. Heating the epoxy may achieve additional cross-linking in the epoxy reaction, which may thereby reduce outgassing from the epoxy, which may in turn reduce or eliminate subsequent lead delamination. A heating device located at or near the die attach site may be used to heat the epoxy to a temperature of 55 C.5 C. during or otherwise in association with the die attach process.

In a described example, a method includes: providing a product package for a product die; building a product mimic die that mimics the product die and which is configured to make the product package functional for use in reliability testing; packaging the product mimic die in the product package to form a packaged product mimic die; reliability testing the packaged product mimic die; responsive to the reliability testing, revising the product package; and repeating the steps of reliability testing and revising the product package until the product package passes the reliability tests.

A semiconductor device structure is provided. The semiconductor device structure includes a substrate, an electrical connection structure extending upwardly from an upper surface of the substrate by a first height, and a contact pad electrically disposed on the upper surface of the substrate. The contact pad has a solder-wettable surface with an area configured to support a solder ball having a second height at least twice the first height. The semiconductor device structure further includes a fuse element with a first end electrically coupled to the electrical connection structure and a second end electrically coupled to the contact pad.

Disclosed is a JTAG-based burning device, including controllable switches arranged between a TDI terminal of a JTAG host and a first chip, and between two adjacent chips, and further including a master controllable switch module arranged between each chip and a TDO terminal of the JTAG host, wherein the JTAG host may, according to a received burning instruction, control corresponding input terminals of the controllable switches to be connected to corresponding output terminals and also control an output terminal of the master controllable switch module to be connected to the corresponding input terminal. Obviously, a JTAG chain can be automatically adjusted by controlling the connection relationship between input and output terminals of the corresponding switches by only building a circuit, so that firmware burning on different chips or chip combinations is realized without manual adjustment, thereby improving the test efficiency, and simplifying the circuit structure.

An electronic device including a processor and a sensor may be provided. The processor obtains a first degree of degradation of a first core based on a first parameter value associated with a lifetime of the first core and a first operating level associated with an operation of the first core. The processor obtains a second degree of degradation of a second core based on a second parameter value associated with a lifetime of the second core and a second operating level associated with an operation of the second core. The processor schedules a task of the first core and the second core based on the first degree of degradation and the second degree of degradation. The sensor provides the first parameter value and the first operating level to the first core and the second parameter value and the second operating level to the second core.

A method of iteratively screening a sample of electrolytic capacitors having a predetermined rated voltage is provided. The method can include measuring a first leakage current of a first set of capacitors, calculating a first mean leakage current therefrom, and removing capacitors from the first set having a first leakage current equal to or above a first predetermined value, thereby forming a second set of capacitors. The second set can be subjected to a burn in heat treatment where a test voltage can be applied, then a second leakage current of the second set of capacitors can be measured and a second mean leakage current can be calculated. Capacitors having a second leakage current equal to or above a second predetermined value can be removed from the second set, forming a third set of capacitors. Because of such iterative screening, the capacitors in the third set have low failure rates.

A method of testing an integrated circuit on a test circuit board includes performing, by a processor, a simulation of a first heat distribution throughout an integrated circuit design, manufacturing the integrated circuit according to the integrated circuit design, and simultaneously performing a burn-in test of the integrated circuit and an automated test of the integrated circuit. The burn-in test has a minimum burn-in temperature of the integrated circuit and a burn-in heat distribution across the integrated circuit. The integrated circuit design corresponds to the integrated circuit. The integrated circuit is coupled to the test circuit board. The integrated circuit includes a set of circuit blocks and a first set of heaters.

An IC degradation sensor is disclosed. The IC degradation management sensor includes an odd number of first logic gates electrically connected in a ring oscillator configuration, each first logic gate having an input and an output. Each first logic gate further includes a first PMOS transistor, a first NMOS transistor and a second logic gate having an input and an output. The input of the second logic gate is the input of the first logic gate, and the drains of the first PMOS transistor and the first NMOS transistor are electrically connected to the output of the second logic gate, and the output of the second logic gate is the output of the first logic gate.

An apparatus is described for burn-in and/or functional testing of microelectronic circuits of unsingulated wafers. A large number of power, ground, and signal connections can be made to a large number of contacts on a wafer. The apparatus has a cartridge that allows for fanning-in of electric paths. A distribution board has a plurality of interfaces that are strategically positioned to provide a dense configuration. The interfaces are connected through flexible attachments to an array of first connector modules. Each one of the first connector modules can be independently connected to a respective one of a plurality of second connector modules, thereby reducing stresses on a frame of the apparatus. Further features include for example a piston that allows for tight control of forces exerted by terminals onto contacts of a wafer.

A method of testing an integrated circuit on a test circuit board includes performing, by a processor, a simulation of a first heat distribution throughout an integrated circuit design, and simultaneously performing a burn-in test of the integrated circuit and an automated test of the integrated circuit. The burn-in test has a minimum burn-in temperature of the integrated circuit or a burn-in heat distribution across the integrated circuit that includes a set of circuit blocks or a first set of heaters. The integrated circuit design corresponding to the integrated circuit. The performing the simulation includes determining a heat signature of the integrated circuit design from configured power information or location information for each circuit block of the set of circuit blocks or each heater of the set of heaters included in the integrated circuit design. The heat signature includes heat values distributed throughout the integrated circuit design.