Reliability of an electrical test of a semiconductor wafer is improved. A method of manufacturing a semiconductor device includes a step of performing an electrical test of a semiconductor element by allowing contact portions (tips) of a force terminal (contact terminal) and a sense terminal (contact terminal) held by a probe card (first card) to come into contact with an electrode terminal of a semiconductor wafer. In the step of performing the electrical test, the contact portions of the force terminal and the sense terminal move in a direction away from each other after coming into contact with the first electrode terminal.

A system for electrically testing an object, the system may include a scanning electron microscope that comprises a column; and nano-probe modules that are mechanically connected to the column; wherein the column is configured to illuminate areas of the object, with a beam of charged particles; wherein nano-probes of the nano-probe modules are configured to electrically contact elements of the object, during electrical tests of the object, wherein the elements of the object are located within the areas of the object.

Through-silicon vias (TSVs) are tested using a modified integrated circuit test probe array, an electron beam generation device, a beam direction control device and an electron beam detection device. The TSV extends through a silicon substrate with end portions exposed or accessible by contacts disposed on opposing upper and lower surfaces of the substrate. The test probe array includes a test probe that accesses the lower TSV end portion and applies an AC test signal. An electron beam is directed by the beam direction control device onto the upper substrate surface such that a beam portion reflected from the upper TSV end portion is captured by the electron beam detection device. Reflected beam data is then analyzed to verify the TSV is properly formed. Various scan patterns, different test signal frequencies and an optional resistive coating are used to enhance the TSV testing process.

A method for performing contactless signal testing includes receiving, with a testing pad of an integrated circuit, a signal within a beam. The method further includes converting, with a number of diodes connected to a positive voltage supply, an electrical current signal created by the electron beam to a voltage signal, wherein the number of diodes includes a diode stack of multiple diodes. The method further includes extracting, with a digital inverter, a test signal from the voltage signal.

Multiple planes within the sample are exposed from a single perspective for contact by an electrical probe. The sample can be milled at a non-orthogonal angle to expose different layers as sloped surfaces. The sloped edges of multiple, parallel conductor planes provide access to the multiple levels from above. The planes can be accessed, for example, for contacting with an electrical probe for applying or sensing a voltage. The level of an exposed layer to be contacted can be identified, for example, by counting down the exposed layers from the sample surface, since the non-orthogonal mill makes all layers visible from above. Alternatively, the sample can be milled orthogonally to the surface, and then tilted and/or rotated to provide access to multiple levels of the device. The milling is preferably performed away from the region of interest, to provide electrical access to the region while minimizing damage to the region.

A method includes characterizing the effects of an electric field on a first set of printed wiring boards (PWBs) by testing the first set of PWBs to generate test data, using the test data to determine a dielectric life curve of the first set of PWBs, and based on the dielectric life curve, defining a screening time and a screening voltage to screen for premature failures in a second set of PWBs due to electric fields.

A method of identifying defective electrical connections of a substrate is provided, the substrate having a first surface contact and a first electrical connection extending from the first surface contact through the substrate. The method includes: charging the first surface contact by directing an electron beam on the first surface contact; detecting a first secondary electron signal as a function of time during the charging of the first surface contact; inputting input data that comprise or are based on the first secondary electron signal to a trained computational model, particularly to a trained machine learning model; and receiving defect information about the first electrical connection as an output from the trained computational model. Further described are an apparatus for identifying defective electrical connections of a substrate and a computer-readable storage medium storing a trained computational model.

A method of identifying defective electrical connections of a substrate is provided, the substrate having a first surface contact and a first electrical connection extending from the first surface contact through the substrate. The method includes: charging the first surface contact by directing an electron beam on the first surface contact; detecting a first secondary electron signal as a function of time during the charging of the first surface contact; inputting input data that comprise or are based on the first secondary electron signal to a trained computational model, particularly to a trained machine learning model; and receiving defect information about the first electrical connection as an output from the trained computational model. Further described are an apparatus for identifying defective electrical connections of a substrate and a computer-readable storage medium storing a trained computational model.

A method for testing a packaging substrate with at least one electron beam column is described, wherein the packaging substrate is a panel level packaging substrate or an advanced packaging substrate. The method includes placing the packaging substrate on a stage in a vacuum chamber; directing at least one electron beam of the at least one electron beam column on at least a first portion of the packaging substrate; directing the at least one electron beam of the at least one electron beam column on at least a second portion of the packaging substrate; detecting signal electrons emitted upon impingement of the at least one electron beam for testing a first device-to-device electrical interconnect path of the packaging substrate; and illuminating at least a third portion of the packaging substrate with UV radiation.

A method for testing a packaging substrate with at least one electron beam column is described, wherein the packaging substrate is a panel level packaging substrate or an advanced packaging substrate. The method includes placing the packaging substrate on a stage in a vacuum chamber; directing at least one electron beam of the at least one electron beam column on at least a first portion of the packaging substrate; directing the at least one electron beam of the at least one electron beam column on at least a second portion of the packaging substrate; detecting signal electrons emitted upon impingement of the at least one electron beam for testing a first device-to-device electrical interconnect path of the packaging substrate; and illuminating at least a third portion of the packaging substrate with UV radiation.