Provided is a sample inspection apparatus capable of identifying a capacitive fault or a potential faulty point where an electrical tolerance is low. The sample inspection apparatus includes: a charged particle optical system configured to irradiate a sample 19 with a charged particle beam; a first probe 21a configured to come into contact with the sample; an amplifier 23 having an input terminal to which the first probe is connected; and a phase detection unit 40 to which an output signal of the amplifier is input, in which an AC voltage is applied to the first probe, and the phase detection unit detects the output signal of the amplifier using a reference signal synchronized with the AC voltage and having the same frequency as the AC voltage.

In an approach to inspecting integrated circuits, a system includes a first detection system and a second detection system for measuring electroluminescent (EL) images from a device under test (DUT); and a controller. The controller is configured to: measure EL emissions from the DUT with the first and the second detection systems to obtain a first and a second EL test data; compare the first and the second EL test data to a reference model of a reference device, the reference model developed based on measured EL reference data, synthetic EL reference data, or a combination thereof obtained from the reference device or a reference design of the reference device; and determine whether the DUT is in accordance with the reference device, based at least in part on the comparison of the first and the second EL test data to the reference model of the reference device.

In an approach to inspecting integrated circuits, a system includes a first detection system and a second detection system for measuring electroluminescent (EL) images from a device under test (DUT); and a controller. The controller is configured to: measure EL emissions from the DUT with the first and the second detection systems to obtain a first and a second EL test data; compare the first and the second EL test data to a reference model of a reference device, the reference model developed based on measured EL reference data, synthetic EL reference data, or a combination thereof obtained from the reference device or a reference design of the reference device; and determine whether the DUT is in accordance with the reference device, based at least in part on the comparison of the first and the second EL test data to the reference model of the reference device.

Wafer level electron beam prober systems, devices, and techniques, are described herein related to providing wafer level testing for fabricated device structures. Such wafer level testing contacts a first side of a die of a wafer with a probe to provide test signals to the die under test and performs e-beam imaging of the first side of the die while the test signals are provided to the die under test.