Various approaches to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation.

Various approaches to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation.

An optical detection system and an alignment method for a predetermined target object are provided. The optical detection system includes a chuck stage, an optical detection module, a vision inspection module and a control module. The chuck stage includes a chuck configured for carrying a plurality of predetermined objects to be tested. The optical detection module includes an optical probe device, and the optical probe device is configured to be disposed above the chuck for optically detecting the predetermined object. The vision inspection module includes an image capturing device and an image display device. The image capturing device is configured for capturing a real-time image of the predetermined object in real time, and the image display device is configured for displaying the real-time image of the predetermined object in real time. The control module is configured to execute the alignment method for the predetermined target object.

An inspection apparatus includes a stage on which a substrate is placed, a cooler, a probe card, a light irradiator and a controller. The cooler cools the substrate placed on the stage. The probe card has probes to be in contact with the substrate to supply electric power. The light irradiator irradiates light to an upper surface of the substrate, opposite to a bottom surface of the substrate placed on the stage. Further, the controller controls the light irradiator.

An inspection apparatus includes a stage on which a substrate is placed, a cooler, a probe card, a light irradiator and a controller. The cooler cools the substrate placed on the stage. The probe card has probes to be in contact with the substrate to supply electric power. The light irradiator irradiates light to an upper surface of the substrate, opposite to a bottom surface of the substrate placed on the stage. Further, the controller controls the light irradiator.

A substrate testing apparatus configured to perform a hot electron analysis (HEA) test for analyzing a stand-by failure in a substrate includes a heating chuck having a first surface configured to support the substrate and a second surface opposite to the first surface. The heating chuck is configured to heat the substrate and has an aperture passing through the first surface and the second surface. A substrate moving device moves the substrate on the heating chuck in a lateral direction. A camera is under the heating chuck and photographs the substrate, which is exposed by the heating chuck aperture.

Various approaches to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation.

Various approaches to can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation.

A method of inspecting a radio frequency device modifies a radio frequency signal along electroconductive elements by changing dielectric material properties of a tunable dielectric material. The method includes: emitting a light beam through an optically transparent first substrate layer into a test volume of the tunable dielectric material with an inbound light intensity and/or inbound phase; applying a bias field to a test volume via a first transparent test electrode arranged at the first substrate layer and a second test electrode arranged opposite the first test electrode at a second substrate layer; measuring an outgoing light intensity and/or an outgoing phase of the light beam; and determining a property of the tunable dielectric material based on the outgoing light intensity and the incoming light intensity and/or based on a phase relation between the inbound phase and the outgoing phase of the light beam from the bias field.

Systems and methods are provided for testing a threshold energy required to cause a latchup on an electronic component. An exemplary method includes applying a series of laser pulses to a testing object with a pulsed laser unit. The testing object is connected to a testing circuit which can measure the energy of each of the series of laser pulses, and detect whether a pulse of the series of laser pulses resulted in a latchup on the testing object. Upon detecting the pulse, the method provides for logging the energy of the pulse using a recording unit and logging the latchup status of the test device. If a latchup is detected, the testing circuit automatically mitigates the latchup event.