A semiconductor inspection device includes: a measuring device that supplies power to a semiconductor device and measures the electrical characteristics of the semiconductor device; an optical scanning device that scans the semiconductor device with light intensity-modulated with a plurality of frequencies; a lock-in amplifier that acquires a characteristic signal indicating the electrical characteristics of the plurality of frequency components; and an inspection device that corrects a phase component of the characteristic signal at an arbitrary scanning position with a phase component at a scanning position reflecting the electrical characteristics of a first layer in the semiconductor device as a reference, specifies a phase component of the characteristic signal at a scanning position reflecting the electrical characteristics of a second layer, normalizes the phase component of the characteristic signal at the arbitrary scanning position by using the phase component, and outputs a result based on the normalized phase component.

A probe card for testing electrical properties of a device under test (DUT) includes a plurality of semiconductor devices, which includes a substrate; and at least one transmission antenna, which is implemented as a chip on film (COF) type and attached to the substrate, wirelessly transmitting at least one of electric power and data to each of the plurality of semiconductor devices.

A probe card for testing electrical properties of a device under test (DUT) includes a plurality of semiconductor devices, which includes a substrate; and at least one transmission antenna, which is implemented as a chip on film (COF) type and attached to the substrate, wirelessly transmitting at least one of electric power and data to each of the plurality of semiconductor devices.

A method for inspecting LED dies includes the following steps. First electrodes and second electrodes of LED dies to be inspected are short-circuited via a conductive layer on an inspection substrate, or an inspection bias voltage is applied between the first electrodes and the second electrodes of the LED dies. An excitation light is irradiated on the LED dies to be inspected on the inspection substrate such that the LED dies to be inspected emit a secondary light. When the first electrodes and the second electrodes of the LED dies to be inspected are open, short-circuited, and/or subjected to the inspection bias voltage, the secondary light is captured via an optical sensor. An output of the optical sensor is received via a computer and a spectrum difference of the secondary light is calculated to determine whether the LED dies are abnormal or to classify the LED dies to be inspected.

A control method of an inspection apparatus including a mounting stage on which a substrate having a plurality of inspection objects is mounted, a plurality of sections being formed with respect to the mounting stage and a heater controllable to heat for each of the sections includes when inspecting a first inspection object to be inspected among the plurality of inspection objects, causing the heater to heat a section corresponding to the first inspection object and a section corresponding to a second inspection object to be inspected next.

A control method of an inspection apparatus including a mounting stage on which a substrate having a plurality of inspection objects is mounted, a plurality of sections being formed with respect to the mounting stage and a heater controllable to heat for each of the sections includes when inspecting a first inspection object to be inspected among the plurality of inspection objects, causing the heater to heat a section corresponding to the first inspection object and a section corresponding to a second inspection object to be inspected next.

A sensor head of a test and measurement instrument can include an input configured to receive an input signal from a device under test (DUT), an optical voltage sensor having signal input electrodes and control electrodes or one set of electrodes, wherein the input is connected to the signal input electrodes, and a bias control unit connected to the control electrodes and configured to reduce an error signal or the input signal bias control signal are electrically combined and applied to a single set of electrodes.

A sensor head of a test and measurement instrument can include an input configured to receive an input signal from a device under test (DUT), an optical voltage sensor having signal input electrodes and control electrodes or one set of electrodes, wherein the input is connected to the signal input electrodes, and a bias control unit connected to the control electrodes and configured to reduce an error signal or the input signal bias control signal are electrically combined and applied to a single set of electrodes.

Described are various configurations for performing efficient optical and electrical testing of an opto-electrical device using a compact opto-electrical probe. The compact opto-electrical probe can include electrical contacts arranged for a given electrical contact layout of the opto-electrical device, and optical interface with a window in a probe core that transmits light from the opto-electrical device. An adjustable optical coupler of the probe can be mechanically positioned to receive light from the device's emitter to perform simultaneous optical and electrical analysis of the device.

In an inspection device, the reference signal output section is connected to an external power supply device in electrical parallel with a semiconductor sample, and outputs a reference signal according to the output of the external power supply device. The removal processing section performs, based on the reference signal, processing for removing a noise component, which is due to the output of the external power supply device from the current signal output from the semiconductor sample and outputs a processing signal. The electrical characteristic measurement section measures the electrical characteristics of the semiconductor sample based on the processing signal. The processing signal is subjected to the removal processing performed based on the reference signal from the reference signal output section for which the value of the gain has been set by the gain setting section.