G01R31/315

Magnetic pre-conditioning of magnetic sensors

Methods, systems and apparatus are provided to apply a magnetic pre-conditioning to magnetic tunneling junction (MTJ) sensors and other micro-magnetic devices after fabrication but before testing, trimming or other subsequent processing. The fabricated sensor device is passed through a magnetic field that has a known direction and orientation relative to the device so that the device is placed into a known state prior to final testing and trimming. Various embodiments allow the field to be applied in situ by a permanent magnet or electromagnet as the devices are being processed by a conventional device handler or similar processing system.

Crack detector for semiconductor dies

An assembly for detecting a structural defect in a semiconductor die is provided. The assembly includes a defect-detection sensor and a microcontroller. The defect-detection sensor includes a plurality of resistive paths of electrical-conductive material in the semiconductor die, each of which has a first end and a second end and extends proximate a perimeter of the semiconductor die. The defect-detection sensor includes a plurality of signal-generation structures, each coupled to a respective resistive path and configured to supply a test signal to the resistive path. The microcontroller is configured to control the signal-generation structures to generate the test signals, acquire the test signals in each resistive paths, test an electrical feature of the resistive paths by performing an analysis of the test signals acquired and detect the presence of the structural defect in the semiconductor die based on a result of the analysis of the test signals acquired.

Crack detector for semiconductor dies

An assembly for detecting a structural defect in a semiconductor die is provided. The assembly includes a defect-detection sensor and a microcontroller. The defect-detection sensor includes a plurality of resistive paths of electrical-conductive material in the semiconductor die, each of which has a first end and a second end and extends proximate a perimeter of the semiconductor die. The defect-detection sensor includes a plurality of signal-generation structures, each coupled to a respective resistive path and configured to supply a test signal to the resistive path. The microcontroller is configured to control the signal-generation structures to generate the test signals, acquire the test signals in each resistive paths, test an electrical feature of the resistive paths by performing an analysis of the test signals acquired and detect the presence of the structural defect in the semiconductor die based on a result of the analysis of the test signals acquired.