A memory device includes; a memory cell array including memory cells, a row decoder selecting a word line in response to a received address, and control logic including a sensing capacitor having a size proportional to a size of a word line capacitor associated with the selected word line. The control logic measures line resistance of the selected word line by precharging the selected word line, performing a charge sharing operation between the selected word line and the sensing capacitor following the precharging of the selected word line, and measuring a voltage of the sensing capacitor following the performing of the charge sharing operation.

A first plurality of logic gates and a second plurality of logic gates may be associated with a symmetric configuration. A first output at a first value may be generated by the first plurality of logic gates based on a first portion of input signals. A second output may be generated by the second plurality of logic gates at the first value based on a second portion of the input signals. A subsequent first output at a particular value may be generated by the first plurality of logic gates based on a first portion of a second plurality of input signals and a subsequent second output may be generated by the second plurality of logic gates based on a second portion of the second plurality of input signals. A value of the subsequent second output may be complementary to the particular value of the subsequent first output.

A digital circuit robustness verification method is provided that includes the following steps. An internal storage circuit and an external storage circuit corresponding to a circuit under test are set to store a plurality of random values and a configuration of the circuit under test for performing a predetermined function is set by a processing circuit. A driving signal corresponding to the predetermined function is transmitted to the circuit under test by a previous stage circuit, such that the circuit under test executes the predetermined function to further generate an output signal. The determination as to whether the output signal is correct or not is made by a next stage circuit, and the circuit under test is determined to pass a robustness verification when the output signal is correct.

Circuits and methods for testing voltage monitor circuits are provided. In one embodiment, a method includes setting voltage monitor circuits to test mode; setting, a monitor reference in each voltage monitor circuit, to a respective targeted threshold voltage using a corresponding trim code; ramping, a voltage provided to a subset of voltage monitor circuits, from a first voltage to a second voltage using a test voltage supply, voltages between the first voltage and the second voltage corresponding with targeted threshold voltages of the subset of voltage monitor circuits; determining, for each voltage monitor circuit in the subset of voltage monitor circuits, a voltage value of the test voltage supply resulting in a change in a logic state at an output of a corresponding voltage monitor circuit.

According to one or more embodiments, the semiconductor integrated circuit device includes a pattern generator, a result comparator, and a control circuit. The pattern generator supplies input data to a device-under-test. The result comparator compares output data of the device-under-test with expected value data and outputs a test result signal. The control circuit controls the pattern generator and the result comparator. The device-under-test and the result comparator are commonly connected to a first clock line. The pattern generator and the control circuit are commonly connected to a second clock line different from the first clock line.

The disclosed embodiments relate to method, apparatus and system for testing memory circuitry and diagnostic components designed to test the memory circuitry. The memory may be tested regularly using Memory Built-In Self-Test (MBIST) to detect memory failure. Error Correction Code (ECC)/Parity is implemented for SRAM/Register Files/ROM memory structures to protect against transient and permanent faults during runtime. ECC/Parity encoder and decoder logic detect failure on both data and address buses and are intended to catch soft error or structural fault in address decoding logic in SRAM Controller, where data may be read/written from/to different locations due to faults. ECC/parity logic on the memory structures are subject to failures. In certain exemplary embodiments, an array test controller is used to generate and transmit error vectors to thereby determine faulty diagnostic components. The test vectors may be generated randomly to test the diagnostic components during run-time for in-field testing.

The fully-automatic closed-loop detection method includes: comparing a SCD file of a to-be-tested substation with a device-type data template file, so as to determine whether configuration information about the to-be-tested substation is correct; when the configuration information about the to-be-tested substation is correct, parsing the SCD file of the to-be-tested substation and generating a SSD topological diagram of the to-be-tested substation; and acquiring a testing item from a predetermined testing item library in accordance with the SSD topological diagram of the to-be-tested substation, generating a testing scheme for the to-be-tested substation, performing a testing operation and outputting a testing result.

An integrated circuit includes a sub-system and a reference sub-system. The reference sub-system is substantially identical to the sub-system but is non-operating by default. The integrated circuit includes a test circuit that obtains a parameter value of the sub-system and a reference parameter from the reference sub-system. The integrated circuit detects deterioration of the sub-system based on the parameter value and the reference parameter. The integrated circuit deactivates the sub-system and activates the reference sub-system responsive to detecting deterioration of the sub-system.

A synchronization circuit includes a first synchronizer, a second synchronizer, and selection circuitry. The first synchronizer is configured to synchronize a received signal to a clock signal. The second synchronizer is disposed in parallel with the first synchronizer and configured to synchronize the received signal to the clock signal. The selection circuitry is coupled to the first synchronizer and the second synchronizer. The selection circuitry is configured to provide an output value generated by the first synchronizer at an output terminal of the synchronization circuit based on the output value generated by the first synchronizer being the same as an output value generated by the second synchronizer.

Methods and apparatus for self test of safety logic in safety critical devices is provided in which the safety logic includes comparator logic coupled to a circuit under test (CUT) in a safety critical device and the self test logic is configured to test the comparator logic. The self test logic may be implemented as a single cycle parallel bit inversion approach, a multi-cycle serial bit inversion approach, or a single cycle test pattern injection approach.