Provided are an apparatus for acquiring a depth image, a method for fusing depth images, and a terminal device. The apparatus for acquiring a depth image includes an emitting module, a receiving module, and a processing unit. The emitting module is configured to emit a speckle array to an object, where the speckle array includes p mutually spaced apart speckles. The receiving module includes an image sensor. The processing unit is configured to receive the pixel signal and generate a sparse depth image based on the pixel signal, align an RGB image at a resolution of a*b with the sparse depth image, and fuse the aligned sparse depth image with the RGB image using a pre-trained image fusion model to obtain a dense depth image at a resolution of a*b.

Provided are an apparatus for acquiring a depth image, a method for fusing depth images, and a terminal device. The apparatus for acquiring a depth image includes an emitting module, a receiving module, and a processing unit. The emitting module is configured to emit a speckle array to an object, where the speckle array includes p mutually spaced apart speckles. The receiving module includes an image sensor. The processing unit is configured to receive the pixel signal and generate a sparse depth image based on the pixel signal, align an RGB image at a resolution of a*b with the sparse depth image, and fuse the aligned sparse depth image with the RGB image using a pre-trained image fusion model to obtain a dense depth image at a resolution of a*b.

Disclosed are a light detection and ranging (LIDAR) for both short range and long range based on a single light source, and a vehicle including the same. The lidar includes: a transmitter configured to generate and transmit light; a first receiver configured to receive light reflected from an object within a first detection region of a short range; and a second receiver configured to receive light reflected from an object within a second detection region of a long range, wherein a two-dimensional region of the second detection region at least partially overlapping the first detection region is included in the first detection region.

Systems and methods for operating an autonomous vehicle. The methods comprising: obtaining, by a computing device, loose-fit cuboids overlaid on 3D graphs so as to each encompass LiDAR data points associated with a given object; defining, by the computing device, an amodal cuboid based on the loose-fit cuboids; using, by the computing device, the amodal cuboid to train a machine learning algorithm to detect objects of a given class using sensor data generated by sensors of the autonomous vehicle or another vehicle; and causing, by the computing device, operations of the autonomous vehicle to be controlled using the machine learning algorithm.

Systems and methods for operating an autonomous vehicle. The methods comprising: obtaining, by a computing device, loose-fit cuboids overlaid on 3D graphs so as to each encompass LiDAR data points associated with a given object; defining, by the computing device, an amodal cuboid based on the loose-fit cuboids; using, by the computing device, the amodal cuboid to train a machine learning algorithm to detect objects of a given class using sensor data generated by sensors of the autonomous vehicle or another vehicle; and causing, by the computing device, operations of the autonomous vehicle to be controlled using the machine learning algorithm.

The present invention relates to a lidar (1000) comprising an emitter (1100) and a receiver (1200), wherein the receiver (1200) comprises a discrete amplification photon detector (1210), wherein the receiver (1200) comprises a discriminator (1220), wherein the discriminator (1220) has an input connected to an output signal of the discrete amplification photon detector (1210), and wherein the discriminator (1220) is configured to output a signal indicating that the output signal of the discrete amplification photon detector (1210) is higher than a predetermined threshold.

A method of time of flight sensing. The method comprises using an emitter to emit pulses of radiation and using an array of photo-detectors to detect radiation reflected from an object. For a given group of photo-detectors of the array, the method determines based upon measured times of flight of the radiation, whether to use a first mode of operation in which outputs from individual photo-detectors of the group are combined together or to use a second mode of operation in which outputs from individual photo-detectors are processed separately. The array of photo-detectors comprises a plurality of groups of photo-detectors. One or more groups of photo-detectors operate in the first mode whilst in parallel one or more groups of photo-detectors operate in the second mode.

A control method for light sources of a vision machine and the vision machine. The control method includes the following steps: activating at least one first light source among n light sources to sense spatial information of an object in a field of view; and selectively activating the n light sources according to the spatial information of a sensed object; wherein the n light sources are distributed on a periphery of a front mirror surface of a lens of the vision machine, and n is a natural number greater than or equal to 2. The embodiment of the present disclosure enlarges the field of view of the vision machine, capable of providing corresponding light illumination based on environmental requirements, reducing the interference signal caused by reflection of a single light source, expanding the sensing range of the vision machine, and improving the sensing ability.

Provided is a semiconductor device capable of improving the optical response speed. The semiconductor device includes a pixel array portion in which a plurality of pixels are arranged in a matrix, each of the plurality of pixels including: a pixel forming region partitioned by a separation region in a semiconductor layer; a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type sequentially arranged from a first surface side of the pixel forming region toward a second surface side opposite to the first surface; a pn junction portion in which the first semiconductor region and the second semiconductor region are bonded; a charge extraction region of the second conductivity type provided in a side wall of the separation region; and a relay region of the second conductivity type provided at a position deeper than the second semiconductor region so as to be connected to the charge extraction region and the second semiconductor region. A plurality of the pn junction portions are scattered apart from each other, and the relay region has a higher impurity concentration than the second semiconductor region and terminates at a peripheral portion so as to surround a central portion of a surface of the second semiconductor region opposite to the pn junction portion side.

Provided is a semiconductor device capable of improving the optical response speed. The semiconductor device includes a pixel array portion in which a plurality of pixels are arranged in a matrix, each of the plurality of pixels including: a pixel forming region partitioned by a separation region in a semiconductor layer; a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type sequentially arranged from a first surface side of the pixel forming region toward a second surface side opposite to the first surface; a pn junction portion in which the first semiconductor region and the second semiconductor region are bonded; a charge extraction region of the second conductivity type provided in a side wall of the separation region; and a relay region of the second conductivity type provided at a position deeper than the second semiconductor region so as to be connected to the charge extraction region and the second semiconductor region. A plurality of the pn junction portions are scattered apart from each other, and the relay region has a higher impurity concentration than the second semiconductor region and terminates at a peripheral portion so as to surround a central portion of a surface of the second semiconductor region opposite to the pn junction portion side.