The present disclosure provides an X-ray detecting device, and a manufacturing method of an X-ray detecting panel. The present disclosure also provides an X-ray detecting panel including a main bias voltage signal line and a photodiode. A cathode of the photodiode is electrically connected to the main bias voltage signal line. The X-ray detecting panel further includes at least one auxiliary bias voltage signal line electrically connected to the main bias voltage signal line.

An apparatus includes a supporting base arranged to support a panel arranged to detect incident radiation, a power supply including a positive terminal portion and a negative terminal portion, a substrate connected to the positive terminal portion and the negative terminal portion, an insulating sheet arranged between the supporting base, and the power supply and the substrate, wherein the power supply and the substrate are fixed to the insulating sheet, and a sheet fixing member arranged to fix at least one sheet end of a plurality of sheet ends of the insulating sheet to the supporting base.

An apparatus includes a supporting base arranged to support a panel arranged to detect incident radiation, a power supply including a positive terminal portion and a negative terminal portion, a substrate connected to the positive terminal portion and the negative terminal portion, an insulating sheet arranged between the supporting base, and the power supply and the substrate, wherein the power supply and the substrate are fixed to the insulating sheet, and a sheet fixing member arranged to fix at least one sheet end of a plurality of sheet ends of the insulating sheet to the supporting base.

Provided is a pixel sensing circuit, including a signal generation sub-circuit, a reset sub-circuit, an amplification sub-circuit, and a read sub-circuit. The reset sub-circuit is configured to provide a signal of a first power supply line to a first node under control of a reset signal line. The signal generation sub-circuit is configured to detect a light signal and convert the detected light signal into an electrical signal. The amplification sub-circuit is configured to provide an amplified electrical signal to a second node according to a signal provided by a second power supply line and under control of the first node. The read sub-circuit is configured to output the amplified electrical signal to a signal read line under control of a scan signal line.

Provided is a pixel sensing circuit, including a signal generation sub-circuit, a reset sub-circuit, an amplification sub-circuit, and a read sub-circuit. The reset sub-circuit is configured to provide a signal of a first power supply line to a first node under control of a reset signal line. The signal generation sub-circuit is configured to detect a light signal and convert the detected light signal into an electrical signal. The amplification sub-circuit is configured to provide an amplified electrical signal to a second node according to a signal provided by a second power supply line and under control of the first node. The read sub-circuit is configured to output the amplified electrical signal to a signal read line under control of a scan signal line.

A radiation detector comprising: a pixel array in which pixels each having a radiation detection element configured to convert radiation into charges and an amplification transistor configured to amplify a signal from the radiation detection element and output the amplified signal are arrayed in a matrix shape; and signal wiring provided for each pixel column, wherein a pixel isolation structure formed to surround the radiation detection element in a plan view is provided, and the amplification transistor is arranged inside a region defined by the pixel isolation structure in a plan view.

A radiation detector comprising: a pixel array in which pixels each having a radiation detection element configured to convert radiation into charges and an amplification transistor configured to amplify a signal from the radiation detection element and output the amplified signal are arrayed in a matrix shape; and signal wiring provided for each pixel column, wherein a pixel isolation structure formed to surround the radiation detection element in a plan view is provided, and the amplification transistor is arranged inside a region defined by the pixel isolation structure in a plan view.

A radiation imaging apparatus that is used in a radiation imaging system. The radiation imaging apparatus includes an image capturing unit configured to output an image signal based on radiation transmitted through an object and offset data which is acquired by a plurality of acquisition modes and used for correcting the image signal, and a determination unit configured to determine which of a plurality of waiting modes is to be used to make the image capturing unit wait. The determination unit makes a determination based on the acquisition mode of the offset data.

A radiation imaging apparatus that is used in a radiation imaging system. The radiation imaging apparatus includes an image capturing unit configured to output an image signal based on radiation transmitted through an object and offset data which is acquired by a plurality of acquisition modes and used for correcting the image signal, and a determination unit configured to determine which of a plurality of waiting modes is to be used to make the image capturing unit wait. The determination unit makes a determination based on the acquisition mode of the offset data.

An analog front-end circuit includes an array of pixel circuits. Each pixel circuit includes an event counter and a power consumption circuit. The event counter is configured to count photons incident at the pixel circuit. The power compensation circuit includes an event rate circuit and a current sink circuit. The event rate circuit is configured to determine a rate of photon detection events at the pixel circuit. The current sink circuit is configured to pass a compensation current selected based on the rate of photon detection events at the pixel circuit.