A switching mode power supply includes a microcontroller, an interface circuit connected to the controller, and a boost circuit connected to the controller. A feedback circuit is connected to the controller, and an SiPM is connected to the boost circuit and the feedback circuit.

A ray detector substrate has detection regions and includes a substrate, a first interdigital electrode and a second interdigital electrode disposed on a side of the substrate and located in each detection region, a first scintillator layer disposed on a side of the first interdigital electrode and the second interdigital electrode away from the substrate, and a second scintillator layer disposed on a side of first scintillator layer away from the substrate. The second scintillator layer is configured to convert part of rays incident onto the detection region into visible light, and transmit another part of the rays, so that the another part of the rays is incident onto the first scintillator layer through the second scintillator layer. The first scintillator layer is configured to convert the visible light converted by the second scintillator layer and the another part of the rays through the second scintillator layer into photocurrent.

A ray detector substrate has detection regions and includes a substrate, a first interdigital electrode and a second interdigital electrode disposed on a side of the substrate and located in each detection region, a first scintillator layer disposed on a side of the first interdigital electrode and the second interdigital electrode away from the substrate, and a second scintillator layer disposed on a side of first scintillator layer away from the substrate. The second scintillator layer is configured to convert part of rays incident onto the detection region into visible light, and transmit another part of the rays, so that the another part of the rays is incident onto the first scintillator layer through the second scintillator layer. The first scintillator layer is configured to convert the visible light converted by the second scintillator layer and the another part of the rays through the second scintillator layer into photocurrent.

A data processing apparatus according to an embodiment includes acquisition circuitry and specification circuitry. The acquisition circuitry is configured to acquire a detector signal containing a first component that is based on Cherenkov light and a second component that is based on scintillation light. The specification circuitry is configured to specify timing information about generation of the detector signal by curve fitting to the first component.

A data processing apparatus according to an embodiment includes acquisition circuitry and specification circuitry. The acquisition circuitry is configured to acquire a detector signal containing a first component that is based on Cherenkov light and a second component that is based on scintillation light. The specification circuitry is configured to specify timing information about generation of the detector signal by curve fitting to the first component.

Detection substrate, detection panel and photoelectric detection device are provided. The detection substrate includes: a detection region and a non-detection region surrounding the detection region, wherein the detection region includes a plurality of detection units in an array and a plurality of bias voltage lines; each of the detection units includes: a driving circuit, and a photoelectric conversion circuit electrically connected with the driving circuit; wherein the bias voltage lines are electrically connected with the photoelectric conversion circuits; the non-detection region comprises: input terminals electrically connected with the bias voltage lines, and voltage compensation circuits electrically connected between the input terminals and the bias voltage lines; and the voltage compensation circuits are configured to offset a voltage generated by the photoelectric conversion circuits under ambient light in a manufacturing process of the detection substrate.

Detection substrate, detection panel and photoelectric detection device are provided. The detection substrate includes: a detection region and a non-detection region surrounding the detection region, wherein the detection region includes a plurality of detection units in an array and a plurality of bias voltage lines; each of the detection units includes: a driving circuit, and a photoelectric conversion circuit electrically connected with the driving circuit; wherein the bias voltage lines are electrically connected with the photoelectric conversion circuits; the non-detection region comprises: input terminals electrically connected with the bias voltage lines, and voltage compensation circuits electrically connected between the input terminals and the bias voltage lines; and the voltage compensation circuits are configured to offset a voltage generated by the photoelectric conversion circuits under ambient light in a manufacturing process of the detection substrate.

An apparatus for measuring photon information and a photon measurement device are disclosed. The apparatus comprises a signal conversion module for converting an initial signal outputted by the photoelectric sensor into a converted signal in a voltage form, an integral comparison module for integrating a difference between the initial signal and a feedback signal from the negative feedback module and generating a comparison signal based on a magnitude relationship between a reference level and a combination result of an integral signal and the converted signal, wherein the integral signal is a signal for representing an integral of the difference between the initial signal and the feedback signal, a transmission control module for controlling the comparison signal to be transmit based on a clock signal to output a digital signal, a negative feedback module for converting the digital signal into the feedback signal and feeding the feedback signal back to the integral comparison module, and a measurement module for determining, based on the comparison signal and/or the digital signal, an arrival time of a high-energy photon detected by the photoelectric sensor. The apparatus and the device require few circuit components, and can realize high-precision time measurement.

An apparatus for measuring photon information and a photon measurement device are disclosed. The apparatus comprises a signal conversion module for converting an initial signal outputted by the photoelectric sensor into a converted signal in a voltage form, an integral comparison module for integrating a difference between the initial signal and a feedback signal from the negative feedback module and generating a comparison signal based on a magnitude relationship between a reference level and a combination result of an integral signal and the converted signal, wherein the integral signal is a signal for representing an integral of the difference between the initial signal and the feedback signal, a transmission control module for controlling the comparison signal to be transmit based on a clock signal to output a digital signal, a negative feedback module for converting the digital signal into the feedback signal and feeding the feedback signal back to the integral comparison module, and a measurement module for determining, based on the comparison signal and/or the digital signal, an arrival time of a high-energy photon detected by the photoelectric sensor. The apparatus and the device require few circuit components, and can realize high-precision time measurement.

A digital quantum dot radiographic detection system described herein includes: a scintillation subsystem 202 and a semiconductor light detection subsystem 200, 200′ (including a plurality of quantum dot image sensors 200a, 200b). In a first preferred digital quantum dot radiographic detection system, the plurality of quantum dot image sensors 200 is in substantially direct contact with the scintillation subsystem 202. In a second preferred digital quantum dot radiographic detection system, the scintillation subsystem has a plurality of discrete scintillation packets 212a, 212b, at least one of the discrete scintillation packets communicating with at least one of the quantum dot image sensors. The quantum dot image sensors 200 may be associated with semiconductor substrate 210 made from materials such as silicon (and variations thereof) or graphene. An optically opaque layer 220 is preferably positioned between the discrete scintillation packets, 212a, 212b.