The present disclosure provides an X-ray flat panel detector including: a base substrate; thin film transistors (TFTs), a pixel electrode layer, photodiodes, a transparent electrode layer, and an X-ray conversion layer which are arranged on the base substrate; and an electric field application portion configured to generate an electric field, wherein the photodiodes are arranged in the electric field, and a moving direction of negative charges when visible light rays are converted to electrical signals by the photodiodes is substantially same as a direction of the electric field. In this detector, it is applied a direction of the electric field which is substantially same as the moving direction of negative charges in the photodiode, so that movement of holes and electrons of the photodiode may be accelerated under an influence of the electric field, and thus the electrical signal may promptly arrive at the pixel electrode. As a result, it is improved the quantum detection efficiency and the sensitivity of the X-ray flat panel detector.

An X-ray detector is provided. The X-ray detector includes multiple detector sub-modules. Each detector sub-module includes a semiconductor layer and multiple detector elements. A plurality of detector elements is disposed on the semiconductor layer. Wiring traces extending from the plurality of detector elements to readout circuitry, where each detector element is coupled to a respective wiring trace. The wiring traces are routed within a gap between adjacent detector elements of the plurality of detector elements. Processing circuitry is configured to perform coincidence detection to determine which detector element of the plurality of detector elements is associated with a location of an X-ray hit when the X-ray coincidently hits one of the detector elements of the plurality of detector elements and one or more of the wiring traces coupled to respective detector elements of the plurality of detector elements.

Disclosed herein is an apparatus suitable for detecting x-ray, comprising: an X-ray absorption layer configured to generate an electrical signal from an X-ray photon incident on the X-ray absorption layer; an electronics layer comprising an electronics system configured to process or interpret the electrical signal; and an interposer chip embedded in a board of an electrically insulating material; wherein the X-ray absorption layer is bonded to the electronics layer; wherein the electronics layer is bonded to the interposer chip.

A detector for detecting a single x-ray photon with high temporal resolution and high efficiency includes a semiconductor substrate, the semiconductor substrate including element(s) from each of Groups III and V of the Periodic Table of Elements, and pixels on the substrate. Each pixel includes a semiconductor transistor including an epitaxial layer having element(s) from each of Groups III and V of the Periodic Table of Elements, an anode electrically connected to a gate of the semiconductor transistor, and a cathode electrically connected to a drain of the semiconductor transistor. Photon(s) are caused to impinge the single-photon detector along a y-direction (long side of pixel) to provide adequate stopping power, and electron-hole pairs generated by the photon(s) are collected along an x-direction or z-direction (short sides of pixel) to provide short transit time. Detectors form an array of pixels for x-ray imaging with temporal resolution of single photons.

The invention provides a semiconductor detector, and the semiconductor detector comprises a semiconductor crystal, a cathode, an anode and at least one ladder electrode; the semiconductor crystal comprises a top surface, a bottom surface and at least one side; the cathode, the anode and the ladder electrode are conductive thin films deposited on a surface of the semiconductor crystal; the cathode is disposed on the bottom surface of the semiconductor crystal, the anode is disposed on the top surface of the semiconductor crystal, the ladder electrode is disposed on the at least one side of the semiconductor crystal; and the ladder electrode comprises a plurality of sub-electrodes. As compared to the prior art, the semiconductor detector can improve the energy resolution.

Embodiments of the present invention provide a radiation image detector and a manufacture method to produce the radiation image detector. The radiation image detector includes: a radiation conversion layer, configured to convert a radiation image into a visible light image; an image sensing layer for visible light, including a pixel array formed by a plurality of photosensitive pixels, configured to detect the visible light image; and a microlens layer, disposed between the radiation conversion layer and the image sensing layer, the microlens layer including a lens array formed by multiple micro convex lenses, and optical axes of the micro convex lenses being perpendicular to the image sensing layer. In addition, both the radiation conversion layer and the microlens layer have curved surface structures that are bended in the same direction that non-parallel radiations, emitted from an X-ray generator, will impinge perpendicularly on the radiation conversion layer.

A method for determining a bias (β.sub.i,j) affecting at least one pixel of a detector (1) of ionizing radiation, the detector comprising a plurality of pixels (10.sub.i,j), each pixel being configured to collect charge carriers (6) generated by an interaction of the ionizing radiation in the detector, and to form a pulsed signal under the effect of the generation and collection of the charge carriers, the pixels being distributed in a matrix array, the method comprising: a) following the occurrence of an interaction in the detector, determining a pixel forming a pulse that exceeds an amplitude threshold, during a detection time interval; b) among each pixel determined in step a), selecting a pixel of interest that generates a highest amplitude; c) selecting at least one distant pixel (10.sub.f), the position of the distant pixel, with respect to the pixel of interest, being defined beforehand; d) measuring an amplitude of a signal generated by each distant pixel; e) on the basis of each measurement performed in step d), determining a bias at the detection time for each distant pixel.

An X-ray detection substrate is provided. The X-ray detection substrate includes: a base, including at least a detection function region; a drive circuit layer, including a plurality of detection pixel circuits disposed in the detection function region; a first electrode layer, disposed in the detection function region and including a plurality of first electrodes that are disconnected from each other and arranged in an array, wherein each first electrode is correspondingly connected to one detection pixel circuit; a conversion material layer, disposed in the detection function region and covering the first electrode layer, wherein at least one surface, parallel to a thickness direction of the base, of the conversion material layer is an X-ray receiving surface; and a second electrode layer, disposed in the detection function region and covering the conversion material layer.

In an embodiment a method for operating a radiation detection system having at least one radiation detector and at least one signal filter includes supplying an input signal to the at least one signal filter by the at least one radiation detector, the input signal having step-shaped signal rises, each step-shaped signal rise having a rise time, determining the rise time of a respective step-shaped signal rise, specifying a waiting time for the respective step-shaped signal rise in each case such that the waiting time is greater than or equal to the rise time of the respective step-shaped signal rise and producing an output signal of the at least one signal filter, data point pairs of the input signal being processed in which a time interval of data points from each other is equal to the waiting time for the respective step-shaped signal rise, wherein at least 80% of rise times of the step-shaped signal rises lie between 10 ns and 800 ns inclusive, and wherein the at least one radiation detector includes a silicon drift detector having a radiation entry window of at least 5 mm.sup.2.

A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a thin film transistor on a base substrate; an inter-layer dielectric layer on a side of the thin film transistor away from the base substrate; a sensing electrode and a bias electrode on a side of the inter-layer dielectric layer away from the base substrate, wherein the sensing electrode extends through the inter-layer dielectric layer to electrically connect to the thin film transistor; a passivation layer on a side of the sensing electrode and the bias electrode away from the inter-layer dielectric layer, wherein the passivation layer includes a first portion and a second portion; and a radiation detection layer on a side of the passivation layer away from the base substrate. The first portion and the second portion form a substantially flat contacting surface.