An X-ray detector includes a direct-converting converter element, an evaluation unit, and an intermediate layer arranged flat between the direct-converting converter element and the evaluation unit. In an embodiment, the intermediate layer is non-transparent for visible, infrared, or ultraviolet light.

An X-ray detector includes an anti-scatter grid, an electrode and a converter element for converting X-rays into electrical charges in a stacking arrangement. In an embodiment, the stacking arrangement is externally enclosed by a protective element. The protective element extends in the stacking direction such that an enclosed area is at least arranged between the anti-scatter grid and the converter element and along the entire height of the converter element in the stacking direction. An adhesive element is arranged between the anti-scatter grid and the electrode.

A radiation finder tool assists in locating tissue of interest within a patient. The radiation finder tool includes a body and a plurality of radiation detectors. The body has a distal end, a proximal end. A lengthwise axis of the radiation finder tool extends between the proximal end and the distal end of the body. The plurality of radiation detectors is oriented serially along the lengthwise axis, e.g., stacked one after the other along the lengthwise axis. Each radiation detector of the plurality of radiation detectors has a different field of view for radiation detected by that radiation detector. Each field of view of the plurality of radiation detectors has the lengthwise axis at its center.

Disclosed is a measurement method performed by a Computed Tomography, CT, system. The CT system includes an x-ray source and an x-ray detector array of photon counting edge-on detectors, wherein each edge-on detector has a number of depth-segments, also referred to as detector elements, arranged at different spatial locations in the direction of incoming x-rays. The method includes to apply a time offset measurement scheme that provides a time offset between measurement periods for at least two different detector elements located at different depths, wherein the time offset is chosen so that at least two measurement periods at least partially overlaps in time. Disclosed is also a corresponding CT system, a control unit for a CT system and a measurement circuit for a CT system. A computer program controlling a CT system is also disclosed. The disclosed technology provides for a higher sampling frequency in the angular direction.

A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.

The invention relates to a particle energy measuring device (14) for determining the energy of a particle beam (26) with (a) at least twenty capacitors (30.n) that (i) each comprise a first capacitor plate (32.n) and (ii) a second capacitor plate (34.n), and (iii) are arranged one behind the other with respect to a beam incidence direction (S), (b) a multiplexer (46) that has (i) a multiplexer outlet (48) and (ii) a plurality of multiplexer inputs (50.n), each multiplexer input (50.n) being designed to connect to precisely one capacitor (30.n) and (iii) that is configured to connect one of the capacitor plates (32.n, 34.n) of the respective capacitor to the multiplexer outlet (48), (c) a total charge measuring device (52) that (i) comprises a total charge measuring device in-put (54), which is connected to the second capacitor plates (34.n) in order to detect a total charge (q-) of the charges on all the capacitors (30.n), and (d) a total charge measuring device outlet (56), and (d) an analysis circuit (58) that (i) is connected to the total charge measuring device (52) and the multiplexer (46), and is designed to automatically (i) effect a switch from one multiplexer input (50.n) to another multi-plexer input (50.n), so that the capacitors are individually discharged in succession and (ii) detect the charge (Qn) flowing from each capacitor (30.n) during the discharging process, thereby obtaining charging data from which the particle energy (E) can be calculated.

An X-ray detection substrate is provided. The X-ray detection substrate includes: a base, including at least a detection function region; a drive circuit layer, including a plurality of detection pixel circuits disposed in the detection function region; a first electrode layer, disposed in the detection function region and including a plurality of first electrodes that are disconnected from each other and arranged in an array, wherein each first electrode is correspondingly connected to one detection pixel circuit; a conversion material layer, disposed in the detection function region and covering the first electrode layer, wherein at least one surface, parallel to a thickness direction of the base, of the conversion material layer is an X-ray receiving surface; and a second electrode layer, disposed in the detection function region and covering the conversion material layer.

A through-slit is provided in a semiconductor wafer. A first virtual cutting line defines a chip portion including an energy ray sensitive region as viewed from a direction perpendicular to a first main surface. The shortest distance from a second virtual cutting line to the edge of a second semiconductor region is smaller than the shortest distance from the first virtual cutting line to the edge of the second semiconductor region. The through-slit penetrates through the semiconductor wafer in the thickness direction along the second virtual cutting line. A side surface to which a first semiconductor region is exposed is formed in the chip portion by providing the through-slit. A fourth semiconductor region of a first conductivity type is provided on the side surface side of the chip portion by adding impurities to the side surface to which the first semiconductor region is exposed.

A radiation detection device includes a plurality of field effect transistors (FETs) arranged to form a resonant cavity. The cavity includes a first end and a second end. The plurality of FETs provide an electromagnetic field defining an standing wave oscillating at a resonant frequency defined by a characteristic of the cavity. A radiation input passing through the cavity induces a perturbation of the electromagnetic field.

Disclosed herein is an image sensor comprising: a plurality of packages arranged in a plurality of layers; wherein each of the packages comprises an X-ray detector mounted on a printed circuit board (PCB); wherein the packages are mounted on one or more system PCBs; wherein within an area encompassing a plurality of the X-ray detectors in the plurality of packages, a dead zone of the packages in each of the plurality of layers is shadowed by the packages in the other layers.