A radiation particle strike detection system is disclosed. The radiation particle strike detection system includes a radiation particle detector and a controller coupled to the radiation particle detector. The radiation particle detector is overlayed on at least one surface of a payload that is sensitive to interaction with radiation particles. The radiation particle detector is configured to undergo a change in state responsive to a radiation particle strike at a location on the radiation particle detector. The controller is configured to 1) monitor a state of the radiation particle detector; 2) detect a radiation particle strike on the radiation particle detector based on a change in state of the radiation particle detector; and 3) determine a location and time of the radiation particle strike on the radiation particle detector based on the change in state of the particle detector.

Disclosed herein is a pixelated x-ray scintillator with a multilayer reflector for x-ray detectors with simultaneous high spatial resolution and high quantum efficiency and fabrication method to produce the pixelated x-ray scintillator. The multilayer reflector provides high reflectivity for the emitted visible photons over a broad incident angle range, thus boosts the light output efficiency of the pixelated x-ray scintillator. The fabrication process to produce the pixelated scintillator with the multilayer reflector in this disclosure is compatible with standard semiconductor fabrication instrument and suitable for mass production.

Disclosed herein is an apparatus, comprising: a platform configured to support a human body on a first surface of the platform; a first set of radiation detectors arranged in a first layer, wherein the radiation detectors of the first set are attached to a second surface of the platform opposite the first surface; wherein the radiation detectors of the first set are configured to detect radiation from a radiation source inside the human body.

A method of processing radiation from a source is described comprising: positioning a detector to receive radiation from the source; positioning a collimator between the source and the detector, wherein the collimator has a plurality of apertures; allowing radiation from the source to pass through the collimator and be incident upon the detector; receiving a plurality of responses each being a response to an interaction with incident radiation occurring within the detector; determining, for each of the plurality of responses, a characteristic of the interaction, wherein the characteristic comprises at least a position and depth of the interaction within the detector; processing the said plurality of responses by simultaneously processing position and depth of interaction data in such manner as to accommodate the effect of multiplexing due to overlap of the projected radiation pathways from multiple apertures in the collimator at the detector on the detected position on the detector. A radiation detection system for the detection of radiation from a source, in particular to perform the method, is also described.

The present invention relates to a photon counting detector comprising a first direct conversion layer (10) comprising a low-absorption direct conversion material (11) for converting impinging high-energy electromagnetic radiation (100) into a first count signal and first electrical contacts (12), a second direct conversion layer (20) comprising a high-absorption direct conversion material (21) for converting impinging high-energy electromagnetic radiation (100) into a second count signal and second electrical contacts (22), said high-absorption direct conversion material having a higher absorption than said low-absorption direct conversion material, and a carrier layer (30, 30a, 30b) comprising first and second terminals (31, 32) in contact with the first and second electrical contacts and processing circuitry (35) configured to correct, based on the first count signal, the second count signal for errors, wherein said first direct conversion layer and the second direct conversion layer are arranged such that the high-energy electromagnetic radiation transmits the first direct conversion layer before it hits the second direct conversion layer.

According to one embodiment, a particle detector is disclosed. The particle detector includes a substrate, and detection regions provided on the substrate and insulated from the substrate. Each of the detection regions includes superconducting strips having a longitudinal direction and configured for detecting a particle, and the superconducting strips are arranged in arrangement directions differing between the detection regions. The numbers of particles detected by the respective detection regions are used to generate accumulated detection number profiles of particles in the arrangement directions of the superconducting strips of the respective detection regions, and each of the accumulated detection number profiles includes a profile obtained by accumulating the numbers of particles detected by the respective superconducting strips along the longitudinal direction.

A technique capable of improving a performance of a semiconductor detector is provided. The semiconductor detector is made based on injection of an underfill into a gap between a first semiconductor chip and a second semiconductor chip in a flip-chip connection state, but the underfill is not formed in periphery of a connection structure connecting a reading electrode pad and a gate terminal through a bump electrode.

A radiation detector includes a halide semiconductor sandwiched a cathode and an anode and a buffer layer between the halide semiconductor and the anode. The anode comprises a composition selected from: (a) an electrically conducting inorganic-oxide composition, (b) an electrically conducting organic composition, and (c) an organic-inorganic hybrid composition. The buffer layer comprises a composition selected from: (a) a composition distinct from the composition of the anode and including at least one other electrically conducting inorganic-oxide composition, electrically conducting organic composition, or organic-inorganic hybrid composition; (b) a semi-insulating layer selected from: (i) a polymer-based composition; (ii) a perovskite-based composition; (iii) an oxide-semiconductor composition; (iv) a polycrystalline halide semiconductor; (v) a carbide, nitride, phosphide, or sulfide semiconductor; and (vi) a group II-VI or III-V semiconductor; and (c) a component metal of the halide-semiconductor.

Fast neutron detectors using nuclear reactions within semiconductor sheet material. Some versions used doped versions of the material. Some versions use dopants selected from Ba, As, Br, C, Ce, Cl, Co, Cu, F, Ga, Ge, In, Cd, Te, Al, P, K, La, Mo, Nd, O, Os, Pr, S, Se, Si, Sn, Sr, Ti, Tl, V, Zn, and Zr. Some versions have filters or coatings deposited on windows into the detector. Coatings are selected from titanium oxide, zinc oxide, tin oxide, copper indium gadolinium selenide, cadmium telluride, cadmium tin oxide, perovskite photovoltaic, Si, GaAs, AlP, Ge.

The invention relates to energy-resolved X-ray imaging apparatus and method. The present disclosure provides an apparatus for electromagnetic irradiation imaging. The apparatus includes one or more pixels, each pixel including a plurality of detector cells arranged in a row extending in a row direction. The row is configured to receive photons at an incident surface at one end of the row, and the received photons penetrate the plurality of detector cells in the row direction. The plurality of detector cells of the same row are configured to generate respective signals that collectively indicate an energy-resolved spectral profile of the photons based on the penetration of the photons into the row of detector cells