A radiation imaging apparatus includes a pixel array, a bias line, drive lines, and a driving unit configured to cyclically supply the ON voltage to the drive lines. The apparatus also includes an acquiring unit configured to acquire a plurality of signal values by acquiring a signal value representing a current flowing through the bias line at each of a plurality of times within a period in which the ON voltage is continuously supplied to at least one of the plurality of drive lines, and a processing unit configured to specify an outlier in the plurality of signal values and determine whether or not there is radiation irradiation with respect to the pixel array based on a signal value among the plurality of signal values that is not an outlier, and without being based on the outlier.

A method of operating a radiation imaging system includes applying a bias voltage to a top electrode, receiving ionization radiation, wherein the ionization radiation penetrates an electrical insulation layer and generate a charge signal, storing the charge signal in a storage capacitor among a plurality of storage capacitors, changing a polarity of a gate line bias voltage of one row of transistors among a plurality of transistors, and integrating charges from storage capacitors connected to each other along orthogonal data lines. The imaging system includes an electrical insulation layer having a top surface and a bottom surface, a top electrode on the top surface of the electrical insulation layer, a plurality of pixel units electrically coupled to the electrical insulation layer, the plurality of pixel units including a plurality of storage capacitors, and a plurality of transistors connected to the plurality of pixel units such that a respective transistor is connected to each of the plurality of pixel units.

Disclosed herein is an image sensor and a method of making the image sensor. The image sensor may comprise one or more packages of semiconductor radiation detectors. Each of the one or more packages may comprise a radiation detector that comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer. The radiation absorption layer may be continuous along the first strip of semiconductor wafer with no coverage gap. The first strip and the second strip may be longitudinally aligned and bonded together. The radiation detector may be mounted on a printed circuit board (PCB) and electrically connected to the PCB close to an edge of the radiation detector.

An X-ray imaging inspection system for inspecting items comprises an X-ray source 10 extending around an imaging volume 16, and defining a plurality of source points 14 from which X-rays can be directed through the imaging volume. An X-ray detector array 12 also extends around the imaging volume 16 and is arranged to detect X-rays from the source points which have passed through the imaging volume, and to produce output signals dependent on the detected X-rays. A conveyor 20 is arranged to convey the items through the imaging volume 16.

Disclosed herein is an X-ray detector comprises: an X-ray absorption layer configured to absorb X-ray photons; an electronics layer comprising an electronics system configured to process or interpret signals generated by the X-ray photons incident on the X-ray absorption layer; and a temperature driver in the X-ray absorption layer or the electronics layer.

Disclosed herein is an X-ray detector comprises: an X-ray absorption layer configured to absorb X-ray photons; an electronics layer comprising an electronics system configured to process or interpret signals generated by the X-ray photons incident on the X-ray absorption layer; and a temperature driver in the X-ray absorption layer or the electronics layer.

An active matrix substrate includes a photoelectric conversion element in a pixel P defined by a gate line and a data line. The photoelectric conversion element is connected with a bias line, and the bias line is connected with a bias terminal that supplies a bias voltage to the bias line. The bias terminal is connected with a first protection circuit that is formed with a nonlinear element. The first protection circuit is connected in a reverse-biased state between a first line to which a predetermined voltage higher than the bias voltage is supplied, and the bias terminal.

A method of operating a radiation imaging system includes applying a bias voltage to a top electrode, receiving ionization radiation, wherein the ionization radiation penetrates an electrical insulation layer and generate a charge signal, storing the charge signal in a storage capacitor among a plurality of storage capacitors, changing a polarity of a gate line bias voltage of one row of transistors among a plurality of transistors, and integrating charges from storage capacitors connected to each other along orthogonal data lines. The imaging system includes an electrical insulation layer having a top surface and a bottom surface, a top electrode on the top surface of the electrical insulation layer, a plurality of pixel units electrically coupled to the electrical insulation layer, the plurality of pixel units including a plurality of storage capacitors, and a plurality of transistors connected to the plurality of pixel units such that a respective transistor is connected to each of the plurality of pixel units.

Disclosed herein is an image sensor and a method of making the image sensor. The image sensor may comprise one or more packages of semiconductor radiation detectors. Each of the one or more packages may comprise a radiation detector that comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer. The radiation absorption layer may be continuous along the first strip of semiconductor wafer with no coverage gap. The first strip and the second strip may be longitudinally aligned and bonded together. The radiation detector may be mounted on a printed circuit board (PCB) and electrically connected to the PCB close to an edge of the radiation detector.

Disclosed herein is an X-ray detector comprises: an X-ray absorption layer configured to absorb X-ray photons; an electronics layer comprising an electronics system configured to process or interpret signals generated by the X-ray photons incident on the X-ray absorption layer; and a temperature driver in the X-ray absorption layer or the electronics layer.