An in-core detector configured to measure a power distribution in a nuclear reactor is disclosed herein. The in-core detector includes a housing configured to be placed within a predetermined location of the nuclear reactor and a plurality of a gamma detectors. Each gamma detector of the plurality of gamma detectors includes a Schottky diode including an active semiconductor region and a Schottky contact, an Ohmic contact, a photoelectron source material configured to transfer electrons to the active region upon contact with gamma radiation, and a first and second lead. The plurality of gamma detectors are positioned within the housing such that each gamma detector of the plurality of gamma detectors is radially offset relative to an adjacent gamma detector of the plurality of gamma detectors, such that the first and second leads of each gamma detector are offset relative to the first and second leads of the adjacent gamma detector.

According to an aspect, an active matrix substrate of an X-ray imaging panel includes: an active matrix substrate having a pixel region including a plurality of pixels; and a scintillator that converts X-rays projected onto the X-ray imaging panel to scintillation light. The plurality of pixels include respective photoelectric conversion elements. The active matrix substrate further includes a first planarizing film that covers the photoelectric conversion elements, is formed from an organic resin film, and has a plurality of first contact holes and a first wiring line that is formed in the first contact holes and in a layer upper than the first planarizing film and connected to the photoelectric conversion elements within the first contact holes.

Multiple interactions, such as Compton scattering, inside a PET detector are used to predict an incident photon's direction for identifying true coincidence events versus scatter/random coincidence events by creating a cone shaped shell projection defining a range of possible flight directions for the incident photon. The disclosed techniques can be used as prior information to improve the image reconstruction process. The disclosed techniques can be implemented in a LYSO/SiPM-based layer stacked detector, which can precisely register multiple interactions' 3D position.

Disclosed herein is a radiation detector, comprising: an avalanche photodiode (APD) with a first side coupled to an electrode and configured to work in a linear mode; a capacitor module electrically connected to the electrode and comprising a capacitor, wherein the capacitor module is configured to collect charge carriers from the electrode onto the capacitor; a current sourcing module in parallel to the capacitor, the current sourcing module configured to compensate for a leakage current in the APD and comprising a current source and a modulator; wherein the current source is configured to output a first electrical current and a second electrical current; wherein the modulator is configured to control a ratio of a duration at which the current source outputs the first electrical current to a duration at which the current source outputs the second electrical current.

Disclosed herein is a method comprising: forming a doped region of a semiconductor substrate by doping a surface of the semiconductor substrate with dopants; driving the dopants into the semiconductor substrate by annealing the semiconductor substrate; controlling doping profile of the doped region by repeating doping and annealing the semiconductor substrate; forming a first electrode on the semiconductor substrate, wherein the first electrode is in electrical contact with the doped region; forming an outer electrode arranged around the first electrode, wherein the outer electrode is electrically insulated from the first electrode.

Disclosed herein is an apparatus suitable for radiation detection. The apparatus may comprise a radiation absorption layer and a first electrode on the radiation absorption layer. The radiation absorption layer may be configured to generate charge carriers therein from a radiation particle absorbed by the radiation absorption layer. The first electrode may be configured to generate an electric field in the radiation absorption layer. The first electrode may have a geometry shaping the electric field so that the electric field in an amplification region of the radiation absorption layer has a field strength sufficient to cause an avalanche of the charge carriers in the amplification region.

A silicon photomultiplier includes a plurality of microcells providing a pulse output in response to an incident radiation, each microcell including circuitry configured to enable and disable the pulse output. Each microcell includes a cell disable switch. The control logic circuit controls the cell disable switch and a self-test circuit. A microcell's pulse output is disabled when the cell disable switch is in a first state. A method for self-test calibration of microcells includes providing a test enable signal to the microcells, integrating dark current for a predetermined time period, comparing the integrated dark current to a predetermined threshold level, and providing a signal if above the predetermined threshold level.

A detector assembly for use in detecting radiation includes a scintillator and a solid state photomultiplier coupled to the scintillator. The detector assembly may include a light guide connected between the scintillator and the solid state photomultiplier. The detector assembly may be used within a receiver in a logging instrument for use downhole. The receiver is configured to detect radiation produced by an emitter or from naturally occurring sources.

A semiconductor device may include a plurality of single-photon avalanche diodes. The single-photon avalanche diodes may be arranged in microcells. Each microcell may be a split microcell with first and second independent microcell segments. Each microcell segment in the split microcell may have a respective single-photon avalanche diode that is coupled to an output line. The single-photon avalanche diode of each microcell segment may also be coupled to a respective resistor that is used to quench avalanches in the single-photon avalanche diode. Splitting the microcell may reduce the recovery time of each microcell. The segments of the split microcell may be positioned close together, even if susceptible to optical crosstalk. Intra-microcell isolation structures may be formed between the microcell segments. Inter-microcell isolation structures may be formed around a perimeter of the split microcell. The intra-microcell and inter-microcell isolation structures may be different.

A method for controlling the gain and zero of a multiple pixel photon counter device, and light-measuring system implementing said method. Signals provided by the device are acquired for predefined periods, until a predefined total measurement time is reached, an amplitude histogram is formed from the acquired signals, the positions of two consecutive peaks, measurable on the histogram, are determined, an error signal is produced, which is equal to the deviation between both peaks and, by means of the same, the voltage supplying the device is regulated, so as to keep the deviation equal to a predefined set point.