Techniques are disclosed for systems and methods to provide a radiation detector module for a radiation detector. A radiation detector module includes a metallic and/or metalized enclosure, a radiation sensor disposed within the enclosure, readout electronics configured to provide radiation detection event signals corresponding to incident ionizing radiation in the radiation sensor, and a cap including an internal interface configured to couple to the readout electronics and an external interface configured to couple to a radiation detector, where the cap is configured to hermetically seal the radiation sensor within the enclosure. The cap may be implemented as an edge plated printed circuit board (PCB) including a slot configured to mate with a planar edge of an open surface of the enclosure, where the slot is soldered to the planar edge of the enclosure to hermetically seal the radiation sensor within the enclosure.

A detection device for detecting at least the occurrence and location of occurrence of sensor element signals that are generated by sensor elements, includes an array of detector element circuits each generating a element row output and at least one element column output. The detection device determines, for each row of detector element circuits, at least a first row summation signal corresponding to a sum of the element row outputs of the detector element circuits of this row, and a row address signal indicating that the first row summation signal crosses a threshold. The detection device also determines, for each column of detector element circuits, at least a first column summation signal corresponding to a sum of the element column outputs of the detector element circuits of this column, and a column address signal indicating that the first column summation signal crosses a threshold.

A data processing apparatus according to an embodiment includes acquisition circuitry and specification circuitry. The acquisition circuitry is configured to acquire a detector signal containing a first component that is based on Cherenkov light and a second component that is based on scintillation light. The specification circuitry is configured to specify timing information about generation of the detector signal by curve fitting to the first component.

A gamma ray detector is a detector detecting gamma rays and includes a photomultiplier tube having an entrance window and a photoelectric surface. The entrance window is a Cherenkov radiator. The photoelectric surface is formed on a vacuum side of the entrance window via an intermediate layer. The thickness of the intermediate layer is equal to or less than the wavelength of Cherenkov light emitted by an interaction of the gamma rays with the entrance window.

In an embodiment, a method includes: providing a gray-coded time reference to a time-to-digital converter (TDC); receiving an event from an event signal; latching the gray-coded time reference into a memory upon reception of the event signal; and updating a time-of-flight (ToF) histogram based on the latched gray-coded time reference.

Methods and systems are provided for signal processing in a detector assembly of an imaging system. In one embodiment, an imaging system may include a plurality of detector blocks, each detector block including an array of silicon photomultiplier (SiPM) devices divided into at least two regions, with the SiPM devices in the two or more regions transmitting signals to two or more distinct timing pick-off circuits. In this way, a SiPM array may be subdivided into regions with a signal summed from SiPMs of a single region being transmitted to a separate timing pick-off circuit.

Micrometer-scale x-ray photodetectors that utilize a flexible array of photodiodes wrapped around the circumference of a scintillator core are provided. The photodetectors use dense and flexible pixelated arrays of photodiodes disposed around the circumference of a crystalline scintillator to provide highly compact photodetectors with high spatial, temporal, and energy resolution.

A semiconductor device may include a plurality of single-photon avalanche diodes. The single-photon avalanche diodes may be arranged in microcells. Each microcell may be a split microcell with first and second independent microcell segments. Each microcell segment in the split microcell may have a respective single-photon avalanche diode that is coupled to an output line. The single-photon avalanche diode of each microcell segment may also be coupled to a respective resistor that is used to quench avalanches in the single-photon avalanche diode. Splitting the microcell may reduce the recovery time of each microcell. The segments of the split microcell may be positioned close together, even if susceptible to optical crosstalk. Intra-microcell isolation structures may be formed between the microcell segments. Inter-microcell isolation structures may be formed around a perimeter of the split microcell. The intra-microcell and inter-microcell isolation structures may be different.

An imaging device may include single-photon avalanche diodes (SPADs). Positioning SPADs close together in an imaging device (such as a silicon photomultiplier) may have benefits such as improved sensitivity. However, as the SPADs get closer together, the SPADS may become susceptible to crosstalk. Crosstalk is typically undesirable due to reduced dynamic range and reduced signal accuracy. To reduce crosstalk, a capacitor or other component may be coupled between adjacent SPADs. When an avalanche occurs on a given SPAD, the bias voltage may drop below the breakdown voltage. The capacitor may cause a corresponding voltage drop on a neighboring SPAD. The voltage drop on the neighboring SPAD reduces the over-bias of that SPAD, reducing the sensitivity of the SPAD and therefore mitigating the chance of crosstalk occurring.

The present disclosure relates to devices, systems, and methods relating to configurable silicon photomultiplier (SiPM) devices. An example device includes a substrate and a plurality of single photon avalanche diodes (SPADs) coupled to the substrate. The device also includes a plurality of outputs coupled to the substrate and a plurality of electrical components coupled to the substrate. The plurality of electrical components are configured to selectively connect the plurality of SPADs to the plurality of outputs by selecting which output of the plurality of outputs is connected to each SPAD of the plurality of SPADs and to thereby define a plurality of SiPMs in the device such that each SiPM of the plurality of SiPMs comprises a respective set of one or more SPADs connected to a respective output of the plurality of outputs.