An image sensor is described that has photodetectors with reduced reflections. In one example the image sensor has a plurality of photodetectors on a silicon substrate. The images sensor has a top surface and an anti-reflective coating over the photodetectors, the coating having an array of sub-wavelength sized features

A thin-film coating applicator assembly is disclosed for coating substrates in outdoor applications. The innovative thin-film coating applicator assembly is adapted to apply performance enhancement coatings on installed photovoltaic panels and glass windows in outdoor environments. The coating applicator is adapted to move along a solar panel or glass pane while applicator mechanisms deposit a uniform layer of liquid coating solution to the substrate's surface. The applicator assembly comprises a conveyance means disposed on a frame. Further disclosed are innovative applicator heads that comprise a deformable sponge-like core surrounded by a microporous layer. The structure, when in contact with a substrate surface, deposits a uniform layer of coating solution over a large surface.

The present disclosure relates an optical lens having improved abrasion resistance. In an embodiment, the present disclosure describes a method of improving abrasion resistance of a lens, comprising depositing an inorganic layer (415, preferably silica) of a predetermined thickness on a convex surface of a lens substrate (410) within a vacuum deposition chamber, and applying n antifouling material (425) as a top most layer of the lens to an exposed surface of the deposited inorganic layer. The lens substrate may include a hard coating (412) on a convex surface of a base substrate. In an embodiment, the method further comprises exposing the convex surface of the lens substrate to ion beam pre-cleaning for a predetermined time period.

To provide a near infrared cutoff filter capable of suppressing an influence to a captured image when the incidence angle of light to the near infrared cutoff filter is large. The near infrared cutoff filter comprises a substrate to transmit at least light in the visible wavelength region and, on at least one side of the substrate, an infrared reflective layer constituted by a layered film having a high refractive index film H and a low refractive index film L repeatedly laminated, or a layered film having a high refractive index film H, an intermediate refractive index film M and a low refractive index film L′ repeatedly laminated, and has light transmittance characteristics such that the difference between the maximum value and the minimum value among the decrease rates in average transmittance in region R, region G and region B, is at most 0.05.

To provide a near infrared cutoff filter capable of suppressing an influence to a captured image when the incidence angle of light to the near infrared cutoff filter is large. The near infrared cutoff filter comprises a substrate to transmit at least light in the visible wavelength region and, on at least one side of the substrate, an infrared reflective layer constituted by a layered film having a high refractive index film H and a low refractive index film L repeatedly laminated, or a layered film having a high refractive index film H, an intermediate refractive index film M and a low refractive index film L′ repeatedly laminated, and has light transmittance characteristics such that the difference between the maximum value and the minimum value among the decrease rates in average transmittance in region R, region G and region B, is at most 0.05.

The present disclosure provides a hardmask structure for preparing a semiconductor structure. The hardmask structure includes a first ashable hardmask layer, a first anti-reflection coating, and a second ashable hardmask layer. The first anti-reflection coating is disposed on the first ashable hardmask layer. The second ashable hardmask layer is disposed on the first anti-reflection coating. A modulus of the first ashable hardmask layer is greater than a modulus of the second ashable hardmask layer.

The present invention relates to an anti-reflective film exhibiting one or more peaks (q.sub.max) at a scattering vector of 0.0758 to 0.1256 nm.sup.−1, in a graph showing a log value of scattering intensity to a scattering vector defined in small-angle X-ray scattering.

The present invention relates to an anti-reflective film exhibiting one or more peaks (q.sub.max) at a scattering vector of 0.0758 to 0.1256 nm.sup.−1, in a graph showing a log value of scattering intensity to a scattering vector defined in small-angle X-ray scattering.

The present invention provides a method of producing hollow particles for reducing light scattering in an antireflection coating. This method includes synthesizing core-shell particles including a core containing an organic compound as a major component and a shell containing an inorganic-based compound as a major component in an aqueous medium, dispersing the core-shell particles in an organic solvent, and preparing hollow particles by heating the core-shell particles dispersed in the organic solvent to remove the core therefrom.

The present invention provides a method of producing hollow particles for reducing light scattering in an antireflection coating. This method includes synthesizing core-shell particles including a core containing an organic compound as a major component and a shell containing an inorganic-based compound as a major component in an aqueous medium, dispersing the core-shell particles in an organic solvent, and preparing hollow particles by heating the core-shell particles dispersed in the organic solvent to remove the core therefrom.