A photonic integrated circuit including first and second opto-electronic devices that are fabricated on a semiconductor wafer having an epitaxial layer stack including an n-type indium phosphide-based contact layer that is provided with at least one selectively p-type doped tubular-shaped region for providing an electrical barrier between respective n-type contact regions of the first and second opto-electronic devices that are optically interconnected by a passive optical waveguide that is fabricated in a non-intentionally doped waveguide layer including indium gallium arsenide phosphide, the non-intentionally doped waveguide layer being arranged on top of the n-type contact layer, wherein a first portion of the at least one selectively p-type doped tubular-shaped region is arranged underneath the passive optical waveguide between the first and second opto-electronic devices. An opto-electronic system including the photonic integrated circuit.

A package assembly includes a package substrate including a first die that includes a photonic integrated circuit, a second die located on the first die, the second die including an electronic integrated circuit electrically connected to the photonic integrated circuit, and an interposer module on the package substrate, at least a portion of the interposer module being located on the first die and electrically connected to the photonic integrated circuit.

An optical out-coupler unit for out-coupling light from a waveguide, comprising a substrate having a planar top surface, a waveguide arranged on the top surface of the substrate and having a facet, a reflective surface, wherein the reflective surface is arranged spaced apart from the facet and opposing the facet, wherein the reflective surface is inclined with respect to a normal to the top surface of the substrate by more than 45°. The optical out-coupler may be part of a photonic integrated chip (PIC).

A photonic integrated circuit (PIC)-based imager blade includes a number of PIC imager units stacked on top of one another. Each PIC imager unit includes a PIC coupled, at a first end and a second end, to a first set of lenslets and a second set of lenslets, respectively. An electronic integrated circuit (EIC) is coupled to the PIC. Pairs of lenslets of the first and second set of lenslets are optically coupled to respective waveguides embedded in the PIC. The PIC imager units have different lengths, and longer PIC imager units include larger lenslets.

A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the integrated circuits include single crystal transistors; and an oxide layer disposed between the first level and the second level, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.

A light source or projector for a near-eye display includes a light source subassembly optically coupled to a waveguide concentrator. The light source subassembly may include several semiconductor chips each hosting an array of emitters such s superluminescent light-emitting diodes. The semiconductor chips may be disposed side-by-side, with their emitting sides or facets coupled to the waveguide concentrator, which provides a tight array of output light ports on a common output plane of the concentrator. The output diverging beams at the array of output light ports are coupled to a collimator, which collimates the beams and couples them to an angular scanner for scanning the collimated light beams together across the field of view of the display.

An optical modulator includes a first Radio Frequency (RF) line and a second RF line; an optical waveguide along a length of the modulator with an input and an output; and a plurality of segments along the length including a first set of segments, a single RF line crossing, and a second set of segments, wherein the first set of segments and the second set of segments have an inversion of their respective orientation at the RF line crossing, and wherein the RF line crossing is located off center relative to the plurality of segments, wherein each of the first RF line and the second RF line extend along the length and cross one another at the RF line crossing.

Disclosed herein is a recirculating programmable photonic circuit including a programmable optical coupler including two first programmable waveguides and configured to adjust optical coupling efficiency of an optical signal based on a vertical movement of one of the two first programmable waveguides, a phase shifter including a second programmable waveguide and configured to change a phase of the optical signal based on a horizontal movement of the second programmable waveguide with respect to the first programmable waveguides, a plurality of core cells connected to each of the programmable optical coupler and the phase shifter to form a predetermined shape, the core cells being selectively driven by moving the optical signal from the predetermined shape according to the optical coupling efficiency and the phase, and an actuator electrically connected to one side of each of the plurality of core cells and configured to control the vertical movement and the horizontal movement.

Embodiments of the disclosure provide an optical polarizer with a varying vertical thickness, and methods to form the same. An optical polarizer according to the disclosure may include a first waveguide core over a semiconductor substrate. A first cladding material is on at least an upper surface of the first waveguide core. A second waveguide core over the first waveguide core and above the first cladding material. The second waveguide core includes a first segment having a vertical thickness that varies along a length of the first segment. A second cladding material is at least partially surrounding the second waveguide core. Transfer of one of a transverse electric (TE) mode signal and a transverse magnetic (TM) mode signal from the first waveguide core to the second waveguide core occurs between the first segment of the second waveguide core and the first waveguide core.

Techniques disclosed herein relate to devices that each include one or more photonic integrated circuits and/or one or more electronic integrated circuits. In one embodiment, a device includes a silicon substrate, a die stack bonded (e.g., fusion-bonded) on the silicon substrate, and a printed circuit board (PCB) bonded on the silicon substrate, where the PCB is electrically coupled to the die stack. The die stack includes a photonic integrated circuit (PIC) that includes a photonic integrated circuit, and an electronic integrated circuit (EIC) die that includes an electronic integrated circuit, where the EIC die and the PIC die are bonded face-to-face (e.g., by fusion bonding or hybrid bonding) such that the photonic integrated circuit and the electronic integrated circuit face each other. In some embodiments, the device also includes a plurality of optical fibers coupled to the photonic integrated circuit.