Light detection devices and related methods are provided. The devices may comprise a reaction structure for containing a reaction solution with a relatively high or low pH and a plurality of reaction sites that generate light emissions. The devices may comprise a device base comprising a plurality of light sensors, device circuitry coupled to the light sensors, and a plurality of light guides that block excitation light but permit the light emissions to pass to a light sensor. The device base may also include a shield layer extending about each light guide between each light guide and the device circuitry, and a protection layer that is chemically inert with respect to the reaction solution extending about each light guide between each light guide and the shield layer. The protection layer prevents reaction solution that passes through the reaction structure and the light guide from interacting with the device circuitry.

A light reception device of the present invention includes a first i-type cladding region, an n-type waveguide core having a predetermined width, and a second i-type cladding region in contact with a side surface of the n-type waveguide core on a substrate, includes a p-type absorption layer, a p-type diffusion barrier layer, a p-type contact layer, and a p-type electrode formed in an upper part above a region including a part of the n-type waveguide core, with an i-type insertion layer interposed between the upper part and the region, and includes an n-type electrode on an upper surface of another part of the n-type waveguide core.

An optical element mounting module includes a wiring board including an upper surface and a terminal, an optical waveguide on the upper surface and the terminal, and an optical element on the optical waveguide, including a light emitting/receiving portion having a convex shape and an electrode. The optical waveguide includes a lower cladding layer, a core on the lower cladding layer, an upper cladding layer, a cavity between the upper surface of the upper cladding layer to the lower cladding layer for dividing the core, a through hole passing through the upper to the lower cladding layer to the terminal, and a conductive material in the through hole and connected to the electrode and the terminal. The light emitting/receiving portion includes a first part on the upper cladding layer and a second part between the upper surface of the upper cladding layer and the lower surface of the optical element.

Techniques and mechanisms for optically coupling a photonic integrated circuit (PIC) chip to an optical fiber via a planar optical waveguide structure. In an embodiment, a PIC chip comprises integrated circuitry, photonic waveguides, and integrated edge-oriented couplers (IECs) which are coupled to the integrated circuitry via the photonic waveguides. The PIC chip forms respective divergent lens surfaces of the IECs, which are each at a respective terminus of a corresponding one of the photonic waveguides. A planar optical waveguide structure, which is adjacent to the IECs, comprises a core which is optically coupled between the PIC chip and an array of optical fibers. In another embodiment, an edge of the PIC forms a stepped structure, wherein an upper portion of the stepped structure comprises the plurality of coplanar IECs, and a lower portion of the stepped structure extends past the plurality of coplanar IECs.

Apparatus and methods of manufacture are disclosed. In one example the apparatus includes a first substrate that has a first surface, a first optical waveguide that is at or near the first surface of the first substrate, a second substrate that has a second surface. The second substrate is coupled to the first substrate at an interface. The apparatus also has a photonic integrated circuit (PIC) with a portion at or near the second surface. The PIC is in alignment with and optically coupled to the first optical waveguide across the interface.

Silicon photonic integrated circuit (PIC) on a multi-zone semiconductor on insulator (SOI) substrate having at least a first zone and a second zone. Various optical devices of the PIC may be located above certain substrate zones that are most suitable. A first length of a photonic waveguide structure comprises the crystalline silicon and is within the first zone, while a second length of the waveguide structure is within the second zone. Within a first zone, the crystalline silicon layer is spaced apart from an underlying substrate material by a first thickness of dielectric material. Within the second zone, the crystalline silicon layer is spaced apart from the underlying substrate material by a second thickness of the dielectric material.

An optical device and a spectral detection apparatus are provided. The optical device includes an optical waveguide, including: a polychromatic light channel configured to transport a polychromatic light beam, and provided with a light incident surface for receiving the incident polychromatic light beam at an input end of the polychromatic light channel; a chromatic dispersion device arranged downstream from the polychromatic light channel in an optical path and configured to separate the polychromatic light beam from the polychromatic light channel into a plurality of monochromatic light beams; and a plurality of monochromatic light channels arranged downstream from the chromatic dispersion device in the optical path and configured to respectively conduct the plurality of monochromatic light beams with different colors from the chromatic dispersion device. Monochromatic light output surfaces are respectively provided at output ends of the plurality of monochromatic light channels and configured to output the monochromatic light beams.

A system includes a plurality of wafer-scale modules and a plurality of optical fibers. Each wafer-scale module includes an optical backplane and one or more die stacks on the optical backplane. The optical backplane includes a substrate and at least one optical waveguide layer configured to transport and/or manipulate photonic quantum systems (e.g., photons, qubits, qudits, large entangled states, etc.). Each die stack of the one or more die stacks includes a photonic integrated circuit (PIC) die optically coupled to the at least one optical waveguide layer of the optical backplane. The plurality of optical fibers is coupled to the optical backplanes of the plurality of wafer-scale modules to provide inter-module and/or intra-module interconnects for the photonic quantum systems.

A method and system for forming a photonic device. A photonic device may include a substrate, a cladding layer disposed on the substrate, an electrical device region formed within the cladding layer, the electrical device region having a plurality of electrical device component layers that include at least one metal layer, and a grating region formed within the cladding layer, the grating region including a grating coupler and the at least one metal layer. The at least one metal layer is deposited simultaneously in the electrical device and grating regions and is used in the grating region to reflect light emitted from the grating coupler.

A technology is described for a Photonic Integrated Circuit (PIC) radio frequency (RF) oscillator. The PIC RF oscillator can comprise an optical gain media coupled to a first mirror and configured to be coupled to the PIC. The PIC can comprise a first optical cavity located within the PIC, a tunable mirror to form a first optical path between the first mirror in the gain media and the first tunable mirror, and a frequency tunable intra-cavity dual tone resonator positioned within the first optical cavity to constrain the first optical cavity having a common optical path to produce tow primary laser tones with a tunable frequency spacing. A photo detector is optically coupled to the PIC and configured to mix the two primary laser tones to form an RF output signal with a frequency selected by the tunable frequency spacing of the two primary tones.