A sensor (10) comprises a waveguide (20) having a longitudinal axis and an end face (21), the waveguide (20) comprising a Bragg grating (23). The sensor comprises at least one reflector (24) on the end face (21) of the waveguide (20). An optical resonator (25) is formed by the Bragg grating (23), the at least one reflector (24), and an inner portion of the optical resonator (25) between the Bragg grating (23) and the at least one reflector (24). The inner portion of the optical resonator (25) extends within a portion of the waveguide (20). The sensor (10) comprises a detector (32) configured to detect at least one spectral characteristic of the optical resonator (25) or a change of at least one spectral characteristic of the optical resonator (25).

An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.

Systems and methods here may include improved tunable lasers having a tunable filter and a tunable channel selector that can control precisely the wavelength and the bandwidth of the light emitted by the laser, while suppressing light that may otherwise be emitted by the laser outside the desired wavelength and bandwidth with unidirectional ring lasers having a resonator of which forms a ring and where light propagates only in one of the two possible directions.

In an integrated optical device, squeezed light is used internally to effectively increase an optical modulation effect. One exemplary device operates by squeezing the light at the input, then sending it through an electro-optic stage where its phase picks up the signal of interest, and finally anti-squeezing it to obtain a displaced coherent state. Thus the displacement is amplified by the level of squeezing that is achieved inside the device and it is thereby less sensitive to loss. Since this device behaves simply as an electro-optic modulator, albeit one with an exponentially enhanced sensitivity, no extra considerations are needed to integrate the modulator into a system. Such devices can be operated as modulators or as sensors, and can make use of optical phase shift effects other than the electro-optic effect.

The photonic integrated device for converting a light signal into sound comprises-a substrate having a substrate surface, an optical waveguide on the substrate surface, a photo-acoustic conversion body, comprising at least one volume of fractionally light absorbing material or formed entirely of fractionally light absorbing material, wherein a width of the photo-acoustic conversion body is greater than a width of the optical waveguide and means for enhancing distribution of light from the optical waveguide over the photo-acoustic conversion body.

A demultiplexer for use in a wavelength division multiplexed system. The demultiplexer comprises: an input waveguide, configured to receive a wavelength division multiplexed signal; a demultiplexing element, configured to demultiplex the multiplexed signal received from the input waveguide into a plurality of multi-mode demultiplexed signal components; a multi-mode output waveguide, the multi-mode output waveguide being coupled to the demultiplexing element and configured to receive one of the multi-mode demultiplexed signal components; and a splitter, coupled to the multi-mode output waveguide, and configured to split the received multi-mode demultiplexed signal component into two single-mode outputs.

A semiconductor laser has a mirror formed in a gain chip. The mirror can be placed in the gain chip to provide a broadband reflector to support multiple lasers using the gain chip. The mirror can also be placed in the gain chip to have the semiconductor laser be more efficient or more powerful by changing an optical path length of the gain of the semiconductor laser.

A photonic integrated circuit including first and second opto-electronic devices that are fabricated on a semiconductor wafer having an epitaxial layer stack including an n-type indium phosphide-based contact layer that is provided with at least one selectively p-type doped tubular-shaped region for providing an electrical barrier between respective n-type contact regions of the first and second opto-electronic devices that are optically interconnected by a passive optical waveguide that is fabricated in a non-intentionally doped waveguide layer including indium gallium arsenide phosphide, the non-intentionally doped waveguide layer being arranged on top of the n-type contact layer, wherein a first portion of the at least one selectively p-type doped tubular-shaped region is arranged underneath the passive optical waveguide between the first and second opto-electronic devices. An opto-electronic system including the photonic integrated circuit.

An optical system includes a tunable laser that generates an optical signal at an output that is wavelength tunable. A wavelength router directs particular wavelength bands of the optical signal to particular ones of the plurality of outputs. An optical emitter emits an optical beam at an output, wherein tuning the tunable laser steers the emitted beam.

An optical device having a wavelength measurement section and an SMRS measurement section is disclosed. The wavelength measurement section includes a MZI, which includes first optical waveguides having a first optical path length difference. The wavelength measurement section also includes a second MZI, which includes second optical waveguides having a second optical path length difference. The second optical path length difference is greater than the first optical path length difference. The SMRS includes a filter adapted to suppress a primary laser mode of the second output optical signal and to pass a remaining portion of the second output signal to determine an SMRS based on an optical power of the main laser mode from the wavelength and power measurement stage, and an optical power of the remaining portion of the second output optical signal.