The invention relates to a method for manufacturing a waveguide (2a, 2b) comprising: A supplying of a substrate (1) comprising a stack of a first layer (11) based on a first material on a second layer (12) based on a second material, and at least one sequence successively comprising: An etching of the first material, in such a way as to define at least one pattern (20, 22a) having etching flanks (200, 201), A smoothing annealing assisted by hydrogen in such a way as to smooth the etching flanks (200, 201) of the at least one pattern (20, 22a), A re-epitaxy of the first material on the pattern (20, 22a) based on the first material.

An example device in accordance with an aspect of the present disclosure includes a diamond waveguide disposed on a substrate. The substrate includes a dielectric material. A tuner is to extend from the substrate, and is disposed at least in part over the waveguide. The tuner includes a tuner electrode to control a variable distance between the tuner and the waveguide to vary an effective refractive index of the waveguide.

A semiconductor structure comprises a substrate; an oxide layer on the substrate; a set of group III nitride layers on the oxide layer; and a set of silicon carbide layers located on the set of group III nitride layers.

A method of making an optical fiber-based sensor includes providing an optical fiber, and providing a sensing or protection layer on a surface of the optical fiber by an atomic layer deposition (ALD) process.

Aspects of the present disclosure are directed to process flow to fabricate a waveguide structure with a silicon nitride core having atomic-level smooth sidewalls achieved by wet etching instead of the conventional dry etching process. A mask is pre-biased to account for lateral etching during the wet-etching steps.

Photonic devices including a distributed Bragg reflector (DBR) having a stack of Group III-Nitride layers and Aluminum Scandium Nitride layers.

An optical waveguide component is configured to have a dual structure in which a core region of the first optical waveguide is contained within the core region of the second optical waveguide in a cross-section perpendicular to the length direction of the optical waveguide. The refractive index of a first material of the core of the first optical waveguide is greater than a refractive index of a second material of the core of a second optical waveguide. The refractive index of a second material constituting the core of a second optical waveguide is greater than a refractive index of a third material constituting cladding of the second optical waveguide. The center height of the core of the first optical waveguide and the center height of the core of the second optical waveguide are aligned, which solves connectivity problems caused by worsened butt coupling efficiency, and incomplete adiabatic coupling in an SSC structure of prior art.

Structures and methods for high speed interconnection in photonic systems are described herein. In one embodiment, a photonic device is disclosed. The photonic device includes: a substrate; a plurality of metal layers on the substrate; a photonic material layer comprising graphene over the plurality of metal layers; and an optical routing layer comprising a waveguide on the photonic material layer.

A semiconductor structure comprises a substrate; an oxide layer on the substrate; a set of group III nitride layers on the oxide layer; and a set of silicon carbide layers located on the set of group III nitride layers.

Structures for an edge coupler and methods of forming a structure for an edge coupler. The structure includes a waveguide core over a dielectric layer, and a back-end-of-line stack over the waveguide core and the dielectric layer. The back-end-of-line stack includes an interlayer dielectric layer, a side edge, a first feature, a second feature, and a third feature laterally arranged between the first feature and the second feature. The first feature, the second feature, and the third feature are positioned on the interlayer dielectric layer adjacent to the side edge, and the third feature has an overlapping relationship with a tapered section of the waveguide core.