A thin touch sensitive display includes a display, an optical waveguide, emitters and detectors, and an enclosure. The display displays images. The optical waveguide extends over a surface of the display. The emitters and detectors are optically coupled to the optical waveguide. The emitters produce optical beams that propagate through the waveguide and are received by the detectors. Touch events on or near a surface of the optical waveguide disturb the optical beams. The enclosure is physically separate from the display and the optical waveguide. The enclosure houses electronic components that control the emitters and analyze signals from the detectors to determine a location of a touch event.

A plastic optical fiber for a medical device lighting decreases the cost of a lens and simplify the design of a lighting apparatus, wherein the plastic optical fiber for a medical device includes a core composed of a (co)polymer containing methyl methacrylate as a main component and is characterized by including a cladding material composed of a copolymer having a fluorine weight composition ratio of 60 to 74%, and by having a theoretical numerical aperture, NA, of 0.48 to 0.65 and, thus, the plastic optical fiber has a high numerical aperture and also has excellent translucency and flexibility.

A system may include a polarization rotator combiner. The polarization rotator combiner may include a first stage, a second stage, and a third stage. The first stage may receive a first component of light with a TE00 polarization and a second component of light with the TE00 polarization. The first stage may draw optical paths of the first and second components together. The second stage may receive the first component and the second component from the first stage. The second stage may convert the polarization of the second component from the TE00 polarization to a TE01 polarization. The third stage may receive the first component and the second component from the second stage. The third stage may convert polarization of the second component from the TE01 polarization to a TM00 polarization. The third stage may output the first component and output the second component.

A waveguide structure including a waveguide having a thermally controllable section, and a method of manufacturing the structure. The waveguide structure comprises a plurality of layers. The layers comprise, in order: a substrate (306), a sacrificial layer (305), a lower cladding layer (303), a waveguide core layer (302), and an upper cladding layer (301). The lower cladding layer, waveguide core layer, and upper cladding layer form the waveguide, the waveguide has a waveguide core. The waveguide structure has a continuous via (307) passing through the upper cladding layer, waveguide core layer, and lower cladding layer and running parallel to the waveguide ridge (304) along substantially the whole length of the thermally controllable section. The waveguide structure also has a thermally insulating region (308) in the sacrificial layer extending at least from the via to beyond the waveguide ridge along the whole length of the thermally controllable section. The sacrificial layer comprises a sacrificial material outside of the thermally insulating region, and a thermally insulating gap (308) or thermally insulating material separating the lower cladding layer and substrate inside the thermally insulating region. The structure is manufactured by providing a wet etch to the sacrificial layer through the via in order to remove material from at least the thermally insulating region.

In a method for depositing a layer of amorphous hydrogenated silicon carbide (SiC:H), a gas mixture comprising a reactive gas to inert gas volume ratio of 1:12 to 2:3 is introduced into a reaction chamber of a plasma-enhanced chemical vapor deposition apparatus. The reactive gas has a ratio of Si of 50 to 60, C of 3 to 13, and H of 32 to 42 at %. The inert gas comprises i) a first inert gas selected from helium, neon and mixtures; and ii) a second inert gas selected from argon, krypton, xenon and mixtures. The reaction plasma is at a power frequency of 1-16 MHz at a power level of 100 W to 700 W. The resulting layer exhibits a refractive index of not less than 2.4 and a loss of not more than 180 dB/cm at an indicated wavelength within 800 to 900 nm.

This document discusses, among other things, a waveguide including a first metal having an outer surface proximate a dielectric material and an inner surface defining a path of the waveguide, a method of receiving an optical signal at the inner surface of the waveguide and transmitting the optical signal along at least a portion of the path of the waveguide. A method of integrating a waveguide in a substrate includes depositing sacrificial metal on a first surface of a carrier substrate to form a core of the waveguide, depositing a first metal over the sacrificial metal and at least a portion of the first surface of the carrier substrate, forming an outer surface of the waveguide and a conductor separate from the sacrificial metal, and depositing dielectric material over the first surface of the carrier substrate about the conductor.

A heterogeneous semiconductor structure, including a first integrated circuit and a second integrated circuit, the second integrated circuit being a photonic integrated circuit. The heterogeneous semiconductor structure may be fabricated by bonding a multi-layer source die, in a flip-chip manner, to the first integrated circuit, removing the substrate of the source die, and fabricating one or more components on the source die, using etch and/or deposition processes, to form the second integrated circuit. The second integrated circuit may include components fabricated from cubic phase gallium nitride compounds, and configured to operate at wavelengths shorter than 450 nm.

Example embodiments relate to active-passive waveguide photonic systems. An example embodiment includes a monolithic integrated active/passive waveguide photonic system. The system includes a substrate having positioned thereon at least one active waveguide and at least one passive waveguide. The at least one active waveguide and the at least one passive waveguide are monolithically integrated and are arranged for evanescent wave coupling between the waveguides. The at least one active waveguide and the at least one passive waveguide are positioned so that at least a portion of each waveguide does not overlap the other waveguide, both in a height direction and in a lateral direction with respect to the substrate.

An optical waveguide is disclosed. In a disclosed embodiment, the optical waveguide includes a first aluminum nitride (AlN) thin film disposed on a layer of high-frequency polymer. A second AlN thin film is embedded in the first AlN thin film. In disclosed embodiments, the nitrogen concentration level of the first AlN thin film is different than the concentration level of the second AlN thin film.

An optical waveguide mounting substrate includes a wiring substrate, and an optical waveguide mounted on the wiring substrate with an adhesive layer being interposed therebetween. The optical waveguide includes a first cladding layer, a core layer formed on a surface of the first cladding layer facing toward the wiring substrate, and a second cladding layer formed on the surface of the first cladding layer facing toward the wiring substrate so as to cover a periphery of the core layer. An opening is opened on the second cladding layer-side, penetrating the second cladding layer and the core layer, and closed on the first cladding layer-side, and a metal film is provided on an end face of the core layer in the opening. The second cladding layer faces the wiring substrate via the adhesive layer. A part of the adhesive layer is filled in the opening.