Example embodiments relate to active-passive waveguide photonic systems. An example embodiment includes a monolithic integrated active/passive waveguide photonic system. The system includes a substrate having positioned thereon at least one active waveguide and at least one passive waveguide. The at least one active waveguide and the at least one passive waveguide are monolithically integrated and are arranged for evanescent wave coupling between the waveguides. The at least one active waveguide and the at least one passive waveguide are positioned so that at least a portion of each waveguide does not overlap the other waveguide, both in a height direction and in a lateral direction with respect to the substrate.

An object of the present invention is to reduce the manufacturing cost of a semiconductor device. A semiconductor device includes a SOI substrate that has an optical waveguide including a semiconductor layer. The optical waveguide is covered with an interlayer insulating film. Wiring parts are formed on the interlayer insulating film. Moreover, a thin film part having a smaller thickness than the wiring parts is formed above the optical waveguide and is integrated with the wiring parts.

In one aspect, a hyperspectral image measurement device is provided to include: a main body; an illumination module disposed in the main body and including LEDs having different peak wavelengths to irradiate light to a subject; a camera disposed on the main body and receiving light reflected from the subject to acquire an image of the subject; a barrel having a contact surface contacting the subject, the contact surface located to be spaced apart from the illumination module and the camera module by a predetermined distance; and a reference cover located on the contact surface and including a standard reflection layer for reflecting light irradiated from the illumination module toward the camera module.

A method of fabricating an optical device comprises steps of forming a silicon-based optical component in a substrate; depositing an ILD layer on the substrate and the silicon-based optical component; forming a thermal tuning assembly comprising a first metallic material in the ILD layer and above the silicon-based optical component, wherein the thermal tuning assembly comprises a core above the silicon-based optical component, a plurality of grids spaced apart from the core, and a pair of neck portions connecting the grids to the core, wherein a width of a strip in each grid is greater than a width of the core; forming at least one conductive plug comprising the first metallic material penetrating the ILD layer and coupled to the silicon-based optical component; and forming a plurality of conductive lines comprising a second metallic material coupled to the thermal tuning assembly.

In one aspect, a hyperspectral image measurement device is provided to include: a main body; an illumination module disposed in the main body and including LEDs having different peak wavelengths to irradiate light to a subject; a camera disposed on the main body and receiving light reflected from the subject to acquire an image of the subject; a barrel having a contact surface contacting the subject, the contact surface located to be spaced apart from the illumination module and the camera module by a predetermined distance; and a reference cover located on the contact surface and including a standard reflection layer for reflecting light irradiated from the illumination module toward the camera module.

In some embodiments, the present disclosure provides an optical module. A waveguide includes a rib, and further includes a first protrusion and a second protrusion respectively on opposite sides of the rib. Further, the waveguide is formed of a first semiconductor material. A photodetector is in the waveguide and comprises a PN junction in the rib. A P type region of the PN junction extends to the first protrusion, and an N type region of the PN junction extends to the second protrusion. Further, the first and second protrusions accommodate heavily doped P and N type contact regions. A semiconductor region is on the PN junction. The semiconductor region comprises a second semiconductor material different the first semiconductor material. For example, the second semiconductor material may have a smaller bandgap than the first semiconductor material to enhance quantum efficiency.

Luminaires are described herein employing waveguides and associated architectures for dynamic alteration of illuminance distribution patterns. In one aspect, a luminaire described herein comprises a waveguide body and light sources having differing angular positions relative to the waveguide body for altering illuminance distribution patterns of the luminaire according to one or more activation patterns of the light sources. The differing angular positions can be located at the perimeter of the waveguide body and/or at one or more internal locations of the waveguide body.

A fiber optic cable includes a first optical fiber, a jacket, and a second optical fiber. The first optical fiber includes a glass core and cladding. The glass core is configured to provide controlled transmission of light through the fiber optic cable for high-speed data communication. The jacket has an interior surface that defines a conduit through which the first optical fiber extends. The jacket further has an exterior surface that defines the outside of the fiber optic cable. The second optical fiber is integrated with the exterior surface of the jacket.

A method of fabricating an optical device comprises steps of forming a silicon-based optical component in a substrate; depositing an ILD layer on the substrate and the silicon-based optical component; forming a thermal tuning assembly comprising a first metallic material in the ILD layer and above the silicon-based optical component, wherein the thermal tuning assembly comprises a core above the silicon-based optical component, a plurality of grids spaced apart from the core, and a pair of neck portions connecting the grids to the core, wherein a width of a strip in each grid is greater than a width of the core; forming at least one conductive plug comprising the first metallic material penetrating the ILD layer and coupled to the silicon-based optical component; and forming a plurality of conductive lines comprising a second metallic material coupled to the thermal tuning assembly.

Luminaires are described herein employing waveguides and associated architectures for dynamic alteration of illuminance distribution patterns. The waveguide includes a light extraction component. The waveguide transmits light from a light source to the light extraction component by total internal reflection (TIR). The light extraction component includes one or more reversibly moveable surfaces for altering illuminance distribution patterns of the luminaire in response to one or more forces applied to the light extraction component by a force application assembly of the luminaire.